Modeling of Silicon Bipolar Transistor's Current Gain at Cryogenic Temperatures Down to 40 K

Physical Mechanisms Behind the Current Increase in Silicon Bipolar Transistors at Cryogenic Temperatures

Horizontal Current Bipolar Transistor fT and fmax Recovery at Cryogenic Temperatures

Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K

The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures

Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K

Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K

The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures