Pristupačnost
Horizontal Current Bipolar Transistor fT and fmax Recovery at Cryogenic Temperatures
Modeling of Silicon Bipolar Transistor's Current Gain at Cryogenic Temperatures Down to 40 K
Physical Mechanisms Behind the Current Increase in Silicon Bipolar Transistors at Cryogenic Temperatures
Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K
Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K
The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures
Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K
The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures
Teaching
University undergraduate
- Micro and Nano Electron Devices (Lecturer in charge, Laboratory exercises, Lecturer in charge, Laboratory exercises)
- Electronics 1 (Laboratory exercises)
- Electronics 2 (Laboratory exercises)
- Micro and Nano Electron Devices (Laboratory exercises)
University graduate
- Fundamentals of microelectronics (Lecturer in charge, Laboratory exercises)