- Bibliography (CROSBI)
- List of select publications
- Biography
- Teaching duties
- Research areas
- Professional memberships
- Personal data
- List of select projects
- Past employments
Length-Dependent Electron Transport Properties of Defective Silicene Nanoribbons
Intrinsic Capabilities for Digital Switching of Silicene Nanoribbons with Edge Defects
Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials
Accelerating Simulation of Nanodevices Based on 2D Materials by Hybrid CPU-GPU Parallel Computing
QUDEN2 - Atomistic quantum transport (NEGF) simulator for silicene, germanene and phosphorene nanoribbons
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs
The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects
Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects
Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials
Design of a scalable model of GaN devices - temperature effects and Schottky diode models
Solving practical numerical problems in microelectronic devices and semiconductor technology
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons
Design of a scalable model of GaN devices
PureB layers – XRD measurements and temperature characteristics
Large Area Reverse Structure Avalanche Photodiode Simulations
Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET
Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons
Electronics 1 - laboratory exercises
XPS Data interpretation of PureB layers
Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers
Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje
MORGANA - Semi-classical carrier mobility simulator for graphene nanoribbons on different substrates
Carrier transport in low-dimensional nanoelectronic devices
Influence of substrate type and quality on carrier mobility in graphene nanoribbons
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons
QUDEN - Atomistic quantum transport (NEGF) simulator for studies of transport properties of graphene nanoribbons
Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons
Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons
Optimization of diode capacitance of Annular BS detector
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling
INGA - Simulator of electron mobility for single and double-gate ultra-thin body InGaAs-on-insulator transistors
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
Ultra-high aspect-ratio FinFET technology
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations
Analysis and optimization of modern field-effect transistors - review of the research field
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs
MOSOR - Orientation-dependent carrier mobility simulator for single and double-gate ultra-thin body silicon devices
Emitter Coupled Logic (ECL) Circuit Design in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility
Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices
FinFET Considerations for 0.18 um Technology
1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs
Suppression of Corner Effects in Triple-Gate Bulk FinFETs
Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs
Improving bulk FinFET DC performance in comparison to SOI FinFET
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation
Solution to Dirac comb periodic potential using transfer matrix
Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs
Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics
Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation
Technological constrains of bulk FinFET structure in comparison with SOI FinFET
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs
Influence of quantum effects on the characteristics of extremely scaled MOS transistors
Selected papers in WoS-CC journals:
- M. Poljak, "Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials", IEEE Electron Device Letters, vol. 41, no. 1, pp. 151-154, 2020. (IF = 3,75)
- M. Poljak et al., "The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors", IEEE Trans. on Electron Devices, vol. 65, no. 1, pp. 290-294, 2018. (IF = 2,7)
- M. Poljak et al., "Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects", Nano Research, vol. 9, no. 6, pp. 1723-1734, 2016. (IF = 8,5)
- M. Poljak et al., "Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons", IEEE Trans. on Electron Devices, vol. 59, no. 12, pp. 3231-3238, 2012. (IF = 2,7)
Biography
Dr. Mirko Poljak is currently an Assistant Professor at the Faculty of Electrical Engineering and Computing, University of Zagreb. At this institution, he received the PhD degree in the field of nanoelectronics in May 2013 under the supervision of prof. dr. sc. T. Suligoj (FER) and prof. dr. sc. K. L. Wang (UCLA).
In summer 2009 he attended the European School on Nanosciences and Nanotechnologies in Grenoble (France). He spent full academic year 2011/2012 as Visiting Researcher - Fulbright Fellow - in the Device Research Lab, Dept. of Electrical Engineering, University of California Los Angeles (USA). In December 2014 and June 2015 he did research visits at the Atomistic Simulation Centre, Queen's University Belfast, Belfast (UK).
Dr. Poljak's research is focused on developing models and numerical simulators for the design, analysis and optimization of electron devices at the nanoscale. During his doctoral studies, he worked on carrier transport in low-dimensional nanoelectronic devices such as UTB SOI, FinFET and UTB InGaAs-OI structures. During his stay at UCLA, he investigated electronic and transport properties of graphene and graphene nanoribbons, both experimentally and theoretically (clean room fabrication, characterization, numerical modeling and simulation). His current research interests include the development of an atomistic quantum-transport numerical tool (TCAD) for the analysis of nanodevices based on 2D materials such as silicene and phosphorene for applications in digital, analog/RF and sensor electronics at the nanoscale. Currently, he is developing an in-house 3D NEGF-Poisson TCAD with accelerated parallel computation in a hybrid CPU (BLAS, LAPACK, OpenMP, MPI) and GPU (Nvidia CUDA) environment. Dr. Poljak authored 17 journal papers in journals with above-average impact factors (including a paper in Nano Research with an impact factor of 8,9) and over 25 conference papers. His papers have been cited over 350 times according to the Google Scholar database. His Google Scholar profile with citation data can be accessed here, information from the Scopus database is here, while the data from Web of Science can be found here.
He is a reviewer for IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, etc. Dr. Poljak is a Senior Member of IEEE, and member of IEEE Electron Devices Society and Croatian Society MIPRO. From 2017, he is President of the Joint ED/SSC Chapter, IEEE Croatia Section. Dr. Poljak was awarded the National Science Award (2017), Annual Science Award by the Association of University Professors in Zagreb (2017), FER's Science Award for World-Class Research Achievement (2016), Vera Johanides Award by the Croatian Academy of Engineering (2014), FER's Silver Medal and "Josip Lončar" Award for Outstanding PhD Thesis (2013), FER's Science Award for Outstanding Research Achievements (2013) and the prestigious Fulbright Fellowship by the US Government (2011).
Teaching duties
University undergraduate
- Electronic Devices and Circuits Practicum (Lecturer in charge)
- Electronics 1 (Lecturer in charge)
- Electronics 1R (Lecturer in charge)
- Electronics 2 (Lecturer in charge)
- Fundamentals of Electronics (Lecturer in charge)
- Micro and Nano Electron Devices (Lecturer in charge)
- BSc Thesis (Lecturers)
- BSc Thesis (Lecturers)
- Project (Lecturers)
- Project (Lecturers)
- Software Design Project (Lecturers)
- Software Design Project (Lecturers)
University graduate
- Modeling of Electronic Components for Integrated Circuits (Lecturer in charge)
- Graduation Thesis (Lecturers)
- Graduation Thesis (Lecturers)
- Project (Lecturers)
- Seminar (Lecturers)
Competences
-
Circuits and systems
Circuit simulation Integrated circuit modeling Very large scale integration MOS integrated circuits Silicon-on-insulator Integrated circuit technology CMOS technology Logic devices -
Electron devices
Quantum well devices Quantum wells Semiconductor devices Quantum dots Semiconductor device modeling Tunneling Resonant tunneling devices -
Engineering – general
Electrical engineering -
Mathematics
Linear algebra Boundary conditions Differential equations Eigenvalues and eigenfunctions Boltzmann equation Finite difference methods Iterative methods Numerical analysis Newton method Numerical simulation Sparse matrices -
Nanotechnology
Nanoelectronics Nanomaterials Nanoscale devices -
Instrumentation and measurement
Semiconductor device measurement -
Science – general
Quantum mechanics Density functional theory Quantum capacitance Schrodinger equation Tunneling Solid-state physics -
Computers and information processing
Parallel programming
Professional memberships
Research interests:
- advanced nano-devices for electronics, sensors and neuromorphic circuits at the nanoscale
- physical micro and nanoelectronics, semiclassical and quantum transport
- numerical modeling and simulation - from atomistic scale to compact models for circuit simulation
- parallel programming and computing in hybrid environments (C, OpenMP, MPI, BLAS, LAPACK, Nvidia CUDA)
- 2D materials (graphene, silicene, phosphorene, etc.) and new computing paradigms (spintronics, memristors)
Memberships:
- IEEE Senior Member
- IEEE, IEEE Electron Devices Society
- Croatian Society MIPRO
Personal data
List of select projects
- PI, Computational design of nanotransistors based on novel 2D materials (2020-2025, sponsor: HRZZ-Croatian Science Foundation)
- PI, Silicene nanostructures for nanoelectronics applications (2017-2018, sponsor: NVIDIA Corporation & FER Start)
- Researcher (postdoc), High-Performance Semiconductor Devices for Wireless Circuit and Optical Detection Applications - HIPERSEMI (2014-2018, sponsor: HRZZ; PI: prof. dr. sc. T. Suligoj)
- Researcher (PhD student), Nanometarski elektronički elementi i sklopovske primjene (2007-2013, sponsor: MZOŠ RH; PI: prof. dr. sc. T. Suligoj)
- Researcher, Horizontal current bipolar transistor (HCBT) for 0.18 μm BiCMOS integration (2008-2009, sponsor: Asahi Kasei Microdevices Co., Ltd., Japan; PI: prof. dr. sc. T. Suligoj)
- Researcher (Fulbright Fellow), Atomistic simulations of graphene nanoribbons: Bandstructure and quantum transport (2011-2012, sponsor: FENA; PI: prof. dr. sc. K. L. Wang)
Past employments
From June 2017 - Assistant Professor, with the Dept. of Electronics, Microelectronics, Computer and Intelligent Systems (ZEMRIS).