doc. dr. sc. Mirko Poljak

Assistant professor, Department of Electronics, Microelectronics, Computer and Intelligent Systems

Location:
Public phone number:
6129-924
Internal phone number:
424

Length-Dependent Electron Transport Properties of Defective Silicene Nanoribbons

Poljak, Mirko
2020.
IEEE Transactions on Nanotechnology

Intrinsic Capabilities for Digital Switching of Silicene Nanoribbons with Edge Defects

Poljak, Mirko
2020.
IEEE transactions on electron devices

Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials

Poljak, Mirko
2020.
IEEE electron device letters

Accelerating Simulation of Nanodevices Based on 2D Materials by Hybrid CPU-GPU Parallel Computing

Poljak, Mirko ; Glavan, Marko ; Kuzmić, Sandra
2019.
42nd Intl. Conf. MIPRO-MEET (Microelectronics, Electronics and Electronic Technology)

QUDEN2 - Atomistic quantum transport (NEGF) simulator for silicene, germanene and phosphorene nanoribbons

Poljak, Mirko
2018.

The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs

Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
2018.
IEEE transactions on electron devices

The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors

Poljak, Mirko ; Suligoj, Tomislav
2018.
IEEE transactions on electron devices

Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors

Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
2017.
Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (ULIS) 2017

Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects

Poljak, Mirko ; Suligoj, Tomislav
2016.
Nano Research

Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects

Poljak, Mirko ; Suligoj, Tomislav
2016.
IEEE transactions on electron devices

Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials

Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
2016.
Solid-state electronics

Design of a scalable model of GaN devices - temperature effects and Schottky diode models

Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko
2015.

Solving practical numerical problems in microelectronic devices and semiconductor technology

Poljak, Mirko ; Knežević, Tihomir ; Suligoj, Tomislav
2015.

Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices

Krivec, Sabina ; Poljak, Mirko ; Suligoj, Tomislav
2015.
38th International Convention MIPRO 2015 - Microelectronics, Electronics and Electronic Technology (MEET)

On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels

Poljak, Mirko ; Krivec, Sabina ; Suligoj, Tomislav
2015.
The First Joint EUROSOI-ULIS Conference 2015

Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

Poljak, Mirko ; Wang, Kang L. ; Suligoj, Tomislav
2015.
Solid-state electronics

Design of a scalable model of GaN devices

Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko ; Žonja, Sanja ; Knežević, Tihomir ; Žilak, Josip
2014.

PureB layers – XRD measurements and temperature characteristics

Suligoj, Tomislav ; Knežević Tihomir ; Poljak, Mirko ; Žonja, Sanja ; Žilak, Josip
2014.

Large Area Reverse Structure Avalanche Photodiode Simulations

Suligoj, Tomislav ; Koričić, Marko ; Knežević, Tihomir ; Poljak, Mirko ; Žilak, Josip
2014.

Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint

Poljak, Mirko ; Suligoj, Tomislav
2014.
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Workshop on Carrier Transport in Nano-Transistors

Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs

Poljak, Mirko ; Wang, Minsheng ; Žonja, Sanja ; Đerek, Vedran ; Ivanda, Mile ; Wang, Kang L. ; Suligoj, Tomislav
2014.
37th International Convention MIPRO

Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs

Ivanić, Vedran ; Poljak, Mirko ; Suligoj, Tomislav
2014.
37th International Convention MIPRO

Comparison of RF performance between 20 nm-gate bulk and SOI FinFET

Krivec, Sabina ; Prgić, Hrvoje ; Poljak, Mirko ; Suligoj, Tomislav
2014.
37th International Convention MIPRO

Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons

Poljak, Mirko ; Wang, Kang L. ; Suligoj, Tomislav
2014.
International Conference on Ultimate Integration on Silicon (ULIS) 2014

Electronics 1 - laboratory exercises

Koričić, Marko ; Križan, Mario ; Krois, Igor ; Mandić, Tvrtko ; Poljak, Mirko ; Žonja, Sanja
2013.

XPS Data interpretation of PureB layers

Suligoj, Tomislav ; Koričić, Marko ; Knežević, Tihomir ; Poljak, Mirko ; Žilak, Josip
2013.

Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers

Suligoj, Tomislav ; Knežević, Tihomir ; Poljak, Mirko ; Žilak, Josip
2013.

Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje

Babić, Dubravko ; Suligoj, Tomislav ; Poljak, Mirko
2013.

MORGANA - Semi-classical carrier mobility simulator for graphene nanoribbons on different substrates

Poljak, Mirko
2013.

Carrier transport in low-dimensional nanoelectronic devices

Poljak, Mirko
2013.

Influence of substrate type and quality on carrier mobility in graphene nanoribbons

Poljak, Mirko ; Suligoj, Tomislav ; Wang, Kang L.
2013.
Journal of applied physics

Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons

Poljak, Mirko ; Wang, Minsheng ; Song, Emil B. ; Suligoj, Tomislav ; Wang, Kang L.
2013.
Solid-state electronics

QUDEN - Atomistic quantum transport (NEGF) simulator for studies of transport properties of graphene nanoribbons

Poljak, Mirko
2012.

Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons

Poljak, Mirko ; Song, Emil B. ; Wang, Minsheng ; Suligoj, Tomislav ; Wang, Kang L.
2012.
European Solid-State Device Research Conference (ESSDERC)

Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons

Poljak, Mirko ; Song, Emil B. ; Wang, Minsheng ; Suligoj, Tomislav ; Wang, Kang L.
2012.
IEEE transactions on electron devices

Optimization of diode capacitance of Annular BS detector

Suligoj, Tomislav ; Knežević, Tihomir ; Poljak, Mirko ; Žonja, Sanja ; Žilak, Josip
2012.

Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling

Poljak, Mirko ; Jovanović, Vladimir ; Grgec, Dalibor ; Suligoj, Tomislav
2012.
IEEE transactions on electron devices

INGA - Simulator of electron mobility for single and double-gate ultra-thin body InGaAs-on-insulator transistors

Poljak, Mirko
2011.

Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2011.
2011 IEEE International SOI Conference

Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2011.
2011 IEEE International SOI Conference

Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2011.
34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2011.
Solid-state electronics

Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2010.
International Conference on Microelectronics, Devices and Materials (MIDEM)

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2010.
European Solid-State Device Research Conference

Ultra-high aspect-ratio FinFET technology

Jovanović, Vladimir ; Suligoj, Tomislav ; Poljak, Mirko ; Civale, Yann ; Nanver, Lis K.
2010.
Solid-state electronics

Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2010.
33rd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

Analysis and optimization of modern field-effect transistors - review of the research field

Poljak, Mirko
2010.

Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2010.
International Conference on Ultimate Integration on Silicon - ULIS 2010

Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2010.
Microelectronic Engineering

MOSOR - Orientation-dependent carrier mobility simulator for single and double-gate ultra-thin body silicon devices

Poljak, Mirko
2009.

Emitter Coupled Logic (ECL) Circuit Design in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology

Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko
2009.

Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2009.
International Semiconductor Device Research Symposium 2009

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

Jovanović, Vladimir ; Nanver, Lis K. ; Suligoj, Tomislav ; Poljak, Mirko
2009.
39th European Solid-State Device Research Conference

FinFET Considerations for 0.18 um Technology

Jovanović, Vladimir ; Poljak, Mirko ; Suligoj, Tomislav
2009.
45th International Conference on Microelectronics, Devices and Materials MIDEM 2009

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Jovanović, Vladimir ; Poljak, Mirko ; Suligoj, Tomislav ; Civale, Yann ; Nanver, Lis K.
2009.
Device Research Conference

Suppression of Corner Effects in Triple-Gate Bulk FinFETs

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2009.
International IEEE Conference EUROCON 2009

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2009.
32nd International Convention MIPRO 2009

Improving bulk FinFET DC performance in comparison to SOI FinFET

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2009.
Microelectronic engineering

Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation

Suligoj, Tomislav ; Koričić, Marko ; Poljak, Mirko
2008.

Solution to Dirac comb periodic potential using transfer matrix

Poljak, Mirko
2008.

Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs

Šakić, Agata ; Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2008.
31st International Convention MIPRO

Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2008.
31st International Convention MIPRO

SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2008.
The 14th IEEE Mediterranean Electrotechnical Conference

Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation

Suligoj, Tomislav ; Koričić, Marko ; Jovanović, Vladimir ; Grgec, Dalibor ; Poljak, Mirko
2007.

Technological constrains of bulk FinFET structure in comparison with SOI FinFET

Poljak, Mirko ; Jovanović, Vladimir ; Suligoj, Tomislav
2007.
International Semiconductor Device Research Symposium 2007

Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs

Poljak, Mirko ; Biljanović, Petar ; Suligoj, Tomislav
2007.
International Convention MIPRO

Influence of quantum effects on the characteristics of extremely scaled MOS transistors

Poljak, Mirko
2007.

Selected papers in WoS-CC journals:

  • M. Poljak, "Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials", IEEE Electron Device Letters, vol. 41, no. 1, pp. 151-154, 2020. (IF = 3,75)
  • M. Poljak et al., "The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors", IEEE Trans. on Electron Devices, vol. 65, no. 1, pp. 290-294, 2018. (IF = 2,7)
  • M. Poljak et al., "Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects", Nano Research, vol. 9, no. 6, pp. 1723-1734, 2016. (IF = 8,5)
  • M. Poljak et al., "Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons", IEEE Trans. on Electron Devices, vol. 59, no. 12, pp. 3231-3238, 2012. (IF = 2,7)

Biography

Dr. Mirko Poljak is currently an Assistant Professor at the Faculty of Electrical Engineering and Computing, University of Zagreb. At this institution, he received the PhD degree in the field of nanoelectronics in May 2013 under the supervision of prof. dr. sc. T. Suligoj (FER) and prof. dr. sc. K. L. Wang (UCLA).

In summer 2009 he attended the European School on Nanosciences and Nanotechnologies in Grenoble (France). He spent full academic year 2011/2012 as Visiting Researcher - Fulbright Fellow - in the Device Research Lab, Dept. of Electrical Engineering, University of California Los Angeles (USA). In December 2014 and June 2015 he did research visits at the Atomistic Simulation Centre, Queen's University Belfast, Belfast (UK).

Dr. Poljak's research is focused on developing models and numerical simulators for the design, analysis and optimization of electron devices at the nanoscale. During his doctoral studies, he worked on carrier transport in low-dimensional nanoelectronic devices such as UTB SOI, FinFET and UTB InGaAs-OI structures. During his stay at UCLA, he investigated electronic and transport properties of graphene and graphene nanoribbons, both experimentally and theoretically (clean room fabrication, characterization, numerical modeling and simulation). His current research interests include the development of an atomistic quantum-transport numerical tool (TCAD) for the analysis of nanodevices based on 2D materials such as silicene and phosphorene for applications in digital, analog/RF and sensor electronics at the nanoscale. Currently, he is developing an in-house 3D NEGF-Poisson TCAD with accelerated parallel computation in a hybrid CPU (BLAS, LAPACK, OpenMP, MPI) and GPU (Nvidia CUDA) environment. Dr. Poljak authored 17 journal papers in journals with above-average impact factors (including a paper in Nano Research with an impact factor of 8,9) and over 25 conference papers. His papers have been cited over 350 times according to the Google Scholar database. His Google Scholar profile with citation data can be accessed here, information from the Scopus database is here, while the data from Web of Science can be found here.

He is a reviewer for IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, etc. Dr. Poljak is a Senior Member of IEEE, and member of IEEE Electron Devices Society and Croatian Society MIPRO. From 2017, he is President of the Joint ED/SSC Chapter, IEEE Croatia Section. Dr. Poljak was awarded the National Science Award (2017), Annual Science Award by the Association of University Professors in Zagreb (2017), FER's Science Award for World-Class Research Achievement (2016), Vera Johanides Award by the Croatian Academy of Engineering (2014), FER's Silver Medal and "Josip Lončar" Award for Outstanding PhD Thesis (2013), FER's Science Award for Outstanding Research Achievements (2013) and the prestigious Fulbright Fellowship by the US Government (2011).

Teaching duties

University undergraduate

University graduate

Competences

  • Circuits and systems
    Circuit simulation Integrated circuit modeling Very large scale integration MOS integrated circuits Silicon-on-insulator Integrated circuit technology CMOS technology Logic devices
  • Electron devices
    Quantum well devices Quantum wells Semiconductor devices Quantum dots Semiconductor device modeling Tunneling Resonant tunneling devices
  • Engineering – general
    Electrical engineering
  • Mathematics
    Linear algebra Boundary conditions Differential equations Eigenvalues and eigenfunctions Boltzmann equation Finite difference methods Iterative methods Numerical analysis Newton method Numerical simulation Sparse matrices
  • Nanotechnology
    Nanoelectronics Nanomaterials Nanoscale devices
  • Instrumentation and measurement
    Semiconductor device measurement
  • Science – general
    Quantum mechanics Density functional theory Quantum capacitance Schrodinger equation Tunneling Solid-state physics
  • Computers and information processing
    Parallel programming

Professional memberships

Research interests:

  • advanced nano-devices for electronics, sensors and neuromorphic circuits at the nanoscale
  • physical micro and nanoelectronics, semiclassical and quantum transport
  • numerical modeling and simulation - from atomistic scale to compact models for circuit simulation
  • parallel programming and computing in hybrid environments (C, OpenMP, MPI, BLAS, LAPACK, Nvidia CUDA)
  • 2D materials (graphene, silicene, phosphorene, etc.) and new computing paradigms (spintronics, memristors)

Memberships:

  • IEEE Senior Member
  • IEEE, IEEE Electron Devices Society
  • Croatian Society MIPRO

Personal data

Personal web page:
Official web page URL:
Graduation year:
2007.
PhD graduation year:
2013.
Employed in this institution since:
2007.

List of select projects

  • PI, Computational design of nanotransistors based on novel 2D materials (2020-2025, sponsor: HRZZ-Croatian Science Foundation)
  • PI, Silicene nanostructures for nanoelectronics applications (2017-2018, sponsor: NVIDIA Corporation & FER Start)
  • Researcher (postdoc), High-Performance Semiconductor Devices for Wireless Circuit and Optical Detection Applications - HIPERSEMI (2014-2018, sponsor: HRZZ; PI: prof. dr. sc. T. Suligoj)
  • Researcher (PhD student), Nanometarski elektronički elementi i sklopovske primjene (2007-2013, sponsor: MZOŠ RH; PI: prof. dr. sc. T. Suligoj)
  • Researcher, Horizontal current bipolar transistor (HCBT) for 0.18 μm BiCMOS integration (2008-2009, sponsor: Asahi Kasei Microdevices Co., Ltd., Japan; PI: prof. dr. sc. T. Suligoj)
  • Researcher (Fulbright Fellow), Atomistic simulations of graphene nanoribbons: Bandstructure and quantum transport (2011-2012, sponsor: FENA; PI: prof. dr. sc. K. L. Wang)

Past employments

From June 2017 - Assistant Professor, with the Dept. of Electronics, Microelectronics, Computer and Intelligent Systems (ZEMRIS).