doc. dr. sc. Mirko Poljak

Assistant professor, Department of Electronics, Microelectronics, Computer and Intelligent Systems

Location:
Public phone number:
6129-924
Internal phone number:
424
  Textbooks and scripts
 

1. Poljak, Mirko; Knežević, Tihomir; Suligoj, Tomislav.
Solving practical numerical problems in microelectronic devices and semiconductor technology .
Zagreb : FER: Manualia Universitatis studiorum Zagrabiensis, 2015.

2. Koričić, Marko; Križan, Mario; Krois, Igor; Mandić, Tvrtko; Poljak, Mirko; Žonja, Sanja.
Electronics 1 - laboratory exercises .
Zagreb : Fakultet elektrotehnike i računarstva, 2013.
 
  Journal articles and review articles in CC journals
 

1. Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav.
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs. // IEEE transactions on electron devices. 65 (2018) , 7; 2784-2789 (journal article).

2. Poljak, Mirko; Suligoj, Tomislav.
The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors. // IEEE transactions on electron devices. 65 (2018) , 1; 290-294 (journal article).

3. Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav.
Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials. // Solid-state electronics. 115 (2016) , 1; 109-119 (journal article).

4. Poljak, Mirko; Suligoj, Tomislav.
Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects. // IEEE transactions on electron devices. 63 (2016) , 2; 537-543 (journal article).

5. Poljak, Mirko; Suligoj, Tomislav.
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects. // Nano Research. 9 (2016) , 6; 1723-1734 (journal article).

6. Poljak, Mirko; Wang, Kang L.; Suligoj, Tomislav.
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons. // Solid-state electronics. 108 (2015) ; 67-74 (journal article).

7. Poljak, Mirko; Suligoj, Tomislav; Wang, Kang L.
Influence of substrate type and quality on carrier mobility in graphene nanoribbons. // Journal of applied physics. 114 (2013) , 5; 053701-1-053701-8 (journal article).

8. Poljak, Mirko; Wang, Minsheng; Song, Emil B.; Suligoj, Tomislav; Wang, Kang L.
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons. // Solid-state electronics. 84 (2013) , 6; 103-111 (journal article).

9. Poljak, Mirko; Jovanović, Vladimir; Grgec, Dalibor; Suligoj, Tomislav.
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling. // IEEE transactions on electron devices. 59 (2012) , 6; 1636-1643 (journal article).

10. Poljak, Mirko; Song, Emil B.; Wang, Minsheng; Suligoj, Tomislav; Wang, Kang L.
Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons. // IEEE transactions on electron devices. 59 (2012) , 12; 3231-3238 (journal article).

11. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications. // Solid-state electronics. 65/66 (2011) ; 130-138 (journal article).

12. Jovanović, Vladimir; Suligoj, Tomislav; Poljak, Mirko; Civale, Yann; Nanver, Lis K.
Ultra-high aspect-ratio FinFET technology. // Solid-state electronics. 54 (2010) , 9; 870-876 (journal article).

13. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs. // Microelectronic Engineering. 87 (2010) , 2; 192-199 (journal article).

14. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Improving bulk FinFET DC performance in comparison to SOI FinFET. // Microelectronic engineering. 86 (2009) , 10; 2078-2085 (journal article).
 
  Scientific conference papers with international peer-review
 

1. Poljak, Mirko; Glavan, Marko; Kuzmić, Sandra.
Accelerating Simulation of Nanodevices Based on 2D Materials by Hybrid CPU-GPU Parallel Computing // Proceedings of Intl. Conf. MIPRO-MEET (Microelectronics, Electronics and Electronic Technology) / K. Skala, editor(s).
Rijeka : MIPRO, 2019. 51-56 (lecture,international peer-review,published,scientific).

2. Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav.
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors // Proceedings of the 3rd Joint EUROSOI-ULIS Conference 2017.
2017. 136-139 (lecture,international peer-review,published,scientific).

3. Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav.
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar, editor(s).
Rijeka : GRAFIK, 2015. 25-30 (lecture,international peer-review,published,scientific).

4. Poljak, Mirko; Krivec, Sabina; Suligoj, Tomislav.
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels // Proceedings of the First Joint EUROSOI-ULIS Conference 2015 / Palestri, Pierpaolo ; Gnani, Elena, editor(s).
Bologna, 2015. 117-120 (lecture,international peer-review,published,scientific).

5. Ivanić, Vedran; Poljak, Mirko; Suligoj, Tomislav.
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar, editor(s).
Rijeka : GRAFIK, 2014. 45-50 (lecture,international peer-review,published,scientific).

6. Krivec, Sabina; Prgić, Hrvoje; Poljak, Mirko; Suligoj, Tomislav.
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar, editor(s).
Rijeka : GRAFIK, 2014. 51-56 (lecture,international peer-review,published,scientific).

7. Poljak, Mirko; Wang, Kang L.; Suligoj, Tomislav.
Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons // Proceedings of the International Conference on Ultimate Integration on Silicon (ULIS) 2014 / Mikael Ostling ; Per-Erik Hellstrom ; Gunnar Malm, editor(s).
Stockholm : KTH, 2014. 1-4 (lecture,international peer-review,published,scientific).

8. Poljak, Mirko; Wang, Minsheng; Žonja, Sanja; Đerek, Vedran; Ivanda, Mile; Wang, Kang L.; Suligoj, Tomislav.
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar, editor(s).
Rijeka : GRAFIK, 2014. 33-38 (lecture,international peer-review,published,scientific).

9. Poljak, Mirko; Song, Emil B.; Wang, Minsheng; Suligoj, Tomislav; Wang, Kang L.
Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons // Proceedings of the 42nd European Solid-State Device Research Conference (ESSDERC) / Deval, Yann ; Zimmer, Thomas ; Skotnicki, Thomas, editor(s).
Bordeaux : IEEE, 2012. 298-301 (lecture,international peer-review,published,scientific).

10. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj, editor(s).
Zagreb : DENONA, 2011. 71-76 (lecture,international peer-review,published,scientific).

11. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong, editor(s).
Tempe, Arizona, USA : IEEE, 2011. 114-115 (poster,international peer-review,published,scientific).

12. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong, editor(s).
Tempe, Arizona, SAD : IEEE, 2011. 156-157 (lecture,international peer-review,published,scientific).

13. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy, editor(s).
Glasgow, 2010. 21-24 (lecture,international peer-review,published,scientific).

14. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj, editor(s).
Zagreb : Denona, 2010. 74-79 (lecture,international peer-review,published,scientific).

15. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres, editor(s).
Seville : IEEE, 2010. 242-245 (lecture,international peer-review,published,scientific).

16. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P., editor(s).
Ljubljana : BIRO M, 2010. 101-105 (lecture,international peer-review,published,scientific).

17. Jovanović, Vladimir; Nanver, Lis K.; Suligoj, Tomislav; Poljak, Mirko.
Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A., editor(s).
Athens : IEEE, 2009. 241-244 (lecture,international peer-review,published,scientific).

18. Jovanović, Vladimir; Poljak, Mirko; Suligoj, Tomislav.
FinFET Considerations for 0.18 um Technology // Proceedings of 45th International Conference on Microelectronics, Devices and Materials MIDEM 2009 / Topič M. ; Krč, J. ; Šorli, I., editor(s).
Ljubljana, Slovenija : MIDEM Society for Microelectronics, Electronic Components and Materials, 2009. 91-96 (lecture,international peer-review,published,scientific).

19. Jovanović, Vladimir; Poljak, Mirko; Suligoj, Tomislav; Civale, Yann; Nanver, Lis K.
1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs // Device Research Conference - Conference Digest / Koester, S. ; Gundlach, D. ; Fay, P., editor(s).
IEEE, 2009. 261-262 (lecture,international peer-review,published,scientific).

20. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj, editor(s).
Rijeka : Croatian Society for Information and Communication Technology, Electronics and Microelectronics - MIPRO, 2009. 95-100 (lecture,international peer-review,published,scientific).

21. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Suppression of Corner Effects in Triple-Gate Bulk FinFETs // Proceedings of the International IEEE Conference EUROCON 2009 / Mironenko, I. ; Mikerov, A., editor(s).
St. Petersburg : IEEE, 2009. 1-6 (poster,international peer-review,published,scientific).

22. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep, editor(s).
College Park : IEEE, 2009. 1-2 (lecture,international peer-review,published,scientific).

23. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics // Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference (MELECON) / G. A. Capolino, J. F. Santucci, editor(s).
Ajaccio : IEEE, 2008. 425-430 (lecture,international peer-review,published,scientific).

24. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K., editor(s).
Zagreb : Denona, 2008. 73-78 (lecture,international peer-review,published,scientific).

25. Šakić, Agata; Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K., editor(s).
Zagreb : Denona, 2008. 84-89 (lecture,international peer-review,published,scientific).

26. Poljak, Mirko; Biljanović, Petar; Suligoj, Tomislav.
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs // Proceedings of the 30th International Convention MIPRO 2007 / P. Biljanović, K. Skala, editor(s).
Rijeka, 2007. 78-83 (lecture,international peer-review,published,scientific).

27. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav.
Technological constrains of bulk FinFET structure in comparison with SOI FinFET // Proceedings of International Semiconductor Device Research Symposium / Jones, K., editor(s).
College Park - Washington, USA, 2007. (poster,international peer-review,published,scientific).
 
  Unpublished papers
 

1. Poljak, Mirko; Suligoj, Tomislav.
Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint // 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Workshop on Carrier Transport in Nano-Transistors / Tsuchiya, H. ; Kamakura, Y., editor(s).
Yokohama, Japan, 2014. 1-42 (invited talk,international peer-review,ppt presentation,scientific).

2. Poljak, Mirko.
FinFET: Optimization and Analysis of Specific Effects // European School on Nanosciences and Nanotechnologies (ESONN), August-September 2009, Grenoble, France.
(poster,unpublished,scientific).
 
  Dissertations
 

1. Poljak, Mirko.
Carrier transport in low-dimensional nanoelectronic devices / doctoral thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 28.05. 2013., 209 pages. Mentor: Suligoj, Tomislav ; Wang, Kang L..
 
  Graduation thesis
 

1. Poljak, Mirko.
Influence of quantum effects on the characteristics of extremely scaled MOS transistors / pre-Bologna graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 17.05. 2007., 95 pages. Mentor: Biljanović, Petar.
 
  Other papers
 

1. Suligoj, Tomislav; Knežević Tihomir; Poljak, Mirko; Žonja, Sanja; Žilak, Josip.
PureB layers – XRD measurements and temperature characteristics, 2014. (expertise).

2. Suligoj, Tomislav; Koričić, Marko; Knežević, Tihomir; Poljak, Mirko; Žilak, Josip.
Large Area Reverse Structure Avalanche Photodiode Simulations, 2014. (expertise).

3. Suligoj, Tomislav; Koričić, Marko; Poljak, Mirko; Žonja, Sanja; Knežević, Tihomir; Žilak, Josip.
Design of a scalable model of GaN devices, 2014. (expertise).

4. Babić, Dubravko; Suligoj, Tomislav; Poljak, Mirko.
Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje, 2013.

5. Poljak, Mirko; Suligoj, Tomislav.
MORGANA - Semi-classical carrier mobility simulator for graphene nanoribbons on different substrates, 2013. (program code).

6. Suligoj, Tomislav; Knežević, Tihomir; Poljak, Mirko; Žilak, Josip.
Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers, 2013. (expertise).

7. Suligoj, Tomislav; Koričić, Marko; Knežević, Tihomir; Poljak, Mirko; Žilak, Josip.
XPS Data interpretation of PureB layers, 2013. (expertise).

8. Poljak, Mirko; Suligoj, Tomislav.
QUDEN - Atomistic quantum transport (NEGF) simulator for studies of transport properties of graphene nanoribbons, 2012. (program code).

9. Suligoj, Tomislav; Knežević, Tihomir; Poljak, Mirko; Žonja, Sanja; Žilak, Josip.
Optimization of diode capacitance of Annular BS detector, 2012. (expertise).

10. Poljak, Mirko; Suligoj, Tomislav.
INGA - Simulator of electron mobility for single and double-gate ultra-thin body InGaAs-on-insulator transistors, 2011. (program code).

11. Poljak, Mirko.
Analysis and optimization of modern field-effect transistors - review of the research field, 2010.

12. Poljak, Mirko; Suligoj, Tomislav.
MOSOR - Orientation-dependent carrier mobility simulator for single and double-gate ultra-thin body silicon devices, 2009. (program code).

13. Suligoj, Tomislav; Koričić, Marko; Poljak, Mirko.
Emitter Coupled Logic (ECL) Circuit Design in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology, 2009. (expertise).

14. Poljak, Mirko.
Solution to Dirac comb periodic potential using transfer matrix, 2008.

15. Suligoj, Tomislav; Koričić, Marko; Poljak, Mirko.
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation, 2008. (expertise).

16. Suligoj, Tomislav; Koričić, Marko; Jovanović, Vladimir; Grgec, Dalibor; Poljak, Mirko.
Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation, 2007. (expertise).
 
  Mentoring
 

1. Krivec, Sabina.
Modeling of Electron Transport in Gallium-Nitride Field-Effect Transistors / graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 11.07. 2014., 77 pages. Mentor: Suligoj, Tomislav.

2. Prgić, Hrvoje.
Analysis of high-frequency characteristics of FinFET structures for communication circuits / graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 11.07. 2014., 57 pages. Mentor: Suligoj, Tomislav.

3. Knežević, Tihomir.
Characteristics of ultra-thin body FinFET structures under the influence of stress / pre-Bologna graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 16.07. 2009., 134 pages. Mentor: Suligoj, Tomislav.

4. Petričević, Marijan.
Anaysis of germanium MOS transistors / baccalaureus graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 10.07. 2009., 35 pages. Mentor: Suligoj, Tomislav.

5. Žilak, Josip.
Influence of scaling on the characteristics of scaled CMOS transistors / pre-Bologna graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 16.07. 2009., 87 pages. Mentor: Suligoj, Tomislav.

6. Koharović, Ivan.
Characterization of ultra-thin body FinFET structure / baccalaureus graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 10.06. 2008., 52 pages. Mentor: Suligoj, Tomislav.

7. Šakić, Agata.
Analysis of a double-gate MOSFET based on FinFET technology / pre-Bologna graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 15.07. 2008., 73 pages. Mentor: Suligoj, Tomislav.

8. Šarlija, Marko.
Measurements and simulations of power transistors with long drift region in standard CMOS technology / pre-Bologna graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 15.11. 2008., 101 pages. Mentor: Suligoj, Tomislav.

9. Vasiljević, Igor.
Analysis of power transistors with additional depletion-mechanisms in standard CMOS technology / pre-Bologna graduate thesis.
Zagreb : Fakultet elektrotehnike i računarstva, 15.11. 2008., 106 pages. Mentor: Suligoj, Tomislav.
 

Selected papers in CC journals:

  • M. Poljak et al., "Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects", Nano Research, vol. 9, no. 6, pp. 1723-1734, 2016. LINK
  • M. Poljak et al., "Influence of substrate type and quality on carrier mobility in graphene nanoribbons", Journal of Applied Physics, vol. 114, no. 5, p. 053701, 2013.
  • M. Poljak et al., "Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons", IEEE Trans. on Electron Devices, vol. 59, no. 12, pp. 3231-3238, 2012.
  • M. Poljak et al., "Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling", IEEE Trans. on Electron Devices, vol. 59, no. 6, pp. 1636-1643, 2012.

Biography

Dr. Mirko Poljak is currently an Assistant Professor at the Faculty of Electrical Engineering and Computing, University of Zagreb. At this institution, he received the PhD degree in the field of nanoelectronics in May 2013 under the supervision of prof. dr. sc. T. Suligoj (FER) and prof. dr. sc. K. L. Wang (UCLA).

In summer 2009 he attended the European School on Nanosciences and Nanotechnologies in Grenoble (France). He spent full academic year 2011/2012 as Visiting Researcher - Fulbright Fellow - in the Device Research Lab, Dept. of Electrical Engineering, University of California Los Angeles (USA). In December 2014 and June 2015 he did research visits at the Atomistic Simulation Centre, Queen's University Belfast, Belfast (UK).

Dr. Poljak's research is focused on developing models and numerical simulators for the design, analysis and optimization of electron devices at the nanoscale. During his doctoral studies, he worked on carrier transport in low-dimensional nanoelectronic devices such as UTB SOI, FinFET and UTB InGaAs-OI structures. During his stay at UCLA, he investigated electronic and transport properties of graphene and graphene nanoribbons, both experimentally and theoretically (clean room fabrication, characterization, numerical modeling and simulation). His current research interests include the development of an atomistic quantum-transport numerical tool (TCAD) for the analysis of nanodevices based on 2D materials such as silicene and phosphorene for applications in digital, analog/RF and sensor electronics at the nanoscale. Currently, he is developing an in-house 3D NEGF-Poisson TCAD with accelerated parallel computation in a hybrid CPU (BLAS, LAPACK, OpenMP, MPI) and GPU (Nvidia CUDA) environment. Dr. Poljak authored 13 journal papers in journals with above-average impact factors (including a paper in Nano Research with an impact factor of 8,9) and over 25 conference papers. His papers have been cited over 270 times according to the Google Scholar database. His Google Scholar profile with citation data can be accessed here, information from the Scopus database is here, while the data from Web of Science can be found here.

He is a reviewer for IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, etc. He is a member of IEEE, IEEE Electron Devices Society and Croatian Society MIPRO. From 2017, he is President of the Joint ED/SSC Chapter, IEEE Croatia Section. Dr. Poljak was awarded the National Science Award (2017), Annual Science Award by the Association of University Professors in Zagreb (2017), FER's Science Award for World-Class Research Achievement (2016), Vera Johanides Award by the Croatian Academy of Engineering (2014), FER's Silver Medal and "Josip Lončar" Award for Outstanding PhD Thesis (2013), FER's Science Award for Outstanding Research Achievements (2013) and the prestigious Fulbright Fellowship by the US Government (2011).

Teaching duties

University undergraduate

University graduate

Competences

  • Electron devices
    Semiconductor devices Semiconductor device modeling
  • Nanotechnology
    Nanoelectronics Nanomaterials Nanoscale devices
  • Mathematics
    Numerical simulation
  • Computers and information processing
    Parallel programming

Professional memberships

Research interests:

  • advanced nanodevices for digital and analog/RF electronics, chemical and biosensors at the nanoscale
  • numerical modeling and simulation - from atomistic scale to compact models for circuit simulation
  • parallel scientific computing in hybrid environments (C, OpenMP, MPI, BLAS, LAPACK, Nvidia CUDA)
  • novel 2D materials (graphene, silicene, phosphorene) and new paradigms (spintronics, memristors)

Personal data

Personal web page:
Official web page URL:
Graduation year:
2007.
PhD graduation year:
2013.
Employed in this institution since:
2007.