Na FER-u postoji više zaposlenika s imenom
- Bibliografija (CROSBI)
- Izabrane publikacije
- Životopis
- Nastava
- Područja istraživanja
- Profesionalni interesi i članstva
- Osobni podaci
- Izabrani projekti
- Povijest zaposlenja
Length-Dependent Electron Transport Properties of Defective Silicene Nanoribbons
Intrinsic Capabilities for Digital Switching of Silicene Nanoribbons with Edge Defects
Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials
Accelerating Simulation of Nanodevices Based on 2D Materials by Hybrid CPU-GPU Parallel Computing
QUDEN2 - Atomistic quantum transport (NEGF) simulator for silicene, germanene and phosphorene nanoribbons
The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs
The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects
Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects
Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials
Design of a scalable model of GaN devices - temperature effects and Schottky diode models
Sveučilišni priručnik: Rješavanje praktičnih problema iz mikroelektroničkih komponenti i poluvodičke tehnologije
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons
Design of a scalable model of GaN devices
PureB layers – XRD measurements and temperature characteristics
Large Area Reverse Structure Avalanche Photodiode Simulations
Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET
Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons
Elektronika 1 - laboratorijske vježbe
XPS Data interpretation of PureB layers
Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers
Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje
MORGANA - Semi-classical carrier mobility simulator for graphene nanoribbons on different substrates
Carrier transport in low-dimensional nanoelectronic devices
Influence of substrate type and quality on carrier mobility in graphene nanoribbons
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons
QUDEN - Atomistic quantum transport (NEGF) simulator for studies of transport properties of graphene nanoribbons
Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons
Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons
Optimization of diode capacitance of Annular BS detector
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling
INGA - Simulator of electron mobility for single and double-gate ultra-thin body InGaAs-on-insulator transistors
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications
Ultra-high aspect-ratio FinFET technology
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations
Analiza i optimiranje naprednih tranzistora s efektom polja – pregled područja i dosadašnjih rezultata
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs
MOSOR - Orientation-dependent carrier mobility simulator for single and double-gate ultra-thin body silicon devices
Emitter Coupled Logic (ECL) Circuit Design in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility
Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices
FinFET Considerations for 0.18 um Technology
1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs
Suppression of Corner Effects in Triple-Gate Bulk FinFETs
Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs
Improving bulk FinFET DC performance in comparison to SOI FinFET
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation
Rješenje problema periodičkog potencijala u obliku Diracovog češlja prijenosnom matricom
Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs
Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics
Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation
Technological constrains of bulk FinFET structure in comparison with SOI FinFET
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs
Utjecaj kvantnih efekata na karakteristike ekstremno skaliranih MOS tranzistora
Odabrane publikacije u WoS-CC časopisima:
- M. Poljak, "Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials", IEEE Electron Device Letters, vol. 41, no. 1, pp. 151-154, 2020. (IF = 3,75)
- M. Poljak et al., "The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors", IEEE Trans. on Electron Devices, vol. 65, no. 1, pp. 290-294, 2018. (IF = 2,7)
- M. Poljak et al., "Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects", Nano Research, vol. 9, no. 6, pp. 1723-1734, 2016. (IF = 8,5)
- M. Poljak et al., "Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons", IEEE Trans. on Electron Devices, vol. 59, no. 12, pp. 3231-3238, 2012. (IF = 2,7)
Životopis
Dr. sc. Mirko Poljak je docent na Fakultetu elektrotehnike i računarstva Sveučilišta u Zagrebu. Na ovoj instituciji je doktorirao u svibnju 2013. u području nanoelektronike pod mentorstvom prof. dr. sc. T. Suligoja (FER) i prof. dr. sc. K. L. Wanga (UCLA).
U ljeto 2009. se usavršavao na European School on Nanosciences and Nanotechnologies u Grenobleu (Francuska). Cijelu akad. god. 2011./2012. bio je gostujući istraživač - Fulbright Fellow - u grupi Device Research Lab, Dept. of Electrical Engineering, University of California Los Angeles (SAD). U prosincu 2014. i lipnju 2015. je bio na dva jednotjedna usavršavanja u Atomistic Simulation Centre, Queen's University Belfast, Belfast (UK).
Znanstveni rad dr. Poljaka fokusiran je na razvoj modela i numeričkih simulatora za projektiranje, analizu i optimizaciju elektroničkih elemenata na nanoskali. Za vrijeme doktorskog studija, bio je fokusiran na transport nosilaca u niskodimenzionalnim nanoelektroničkim elementima poput UTB SOI, FinFET i UTB InGaAs-OI struktura. Za vrijeme boravka na UCLA-u, istraživao je transportna i elektronska svojstva grafena i grafenskih nanovrpci, eksperimentalno i teorijski. Trenutni fokus je na razvoju cjelovitog atomističkog kvantnotransportnog simulatora (TCAD) za nanoelektroničke elemente s 2D materijalima poput silicena i fosforena za primjene u digitalnoj, analognoj i senzorskoj elektronici na nanoskali. U tijeku je razvoj originalnog domaćeg in-house 3D NEGF-Poisson simulatora s ubrzanim paralelnim izvođenjem na CPU (BLAS, LAPACK, OpenMP, MPI) i GPU (Nvidia CUDA). Dr. Poljak je autor 17 radova u međunarodnim časopisima s nadprosječnim faktorom utjecaja (uključujući rad u časopisu Nano Research s faktorom utjecaja od 8,9) te preko 25 znanstvenih radova na međunarodnim konferencijama. Radovi su mu citirani preko 350 puta prema Google Scholaru. Google Scholar profil s podacima o citiranosti dostupan je ovdje, podaci iz baze Scopus ovdje, a podaci iz baze Web of Science ovdje.
Recenzent je časopisa IEEE Transactions on Electron Devices, IEEE Electron Device Letters, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, itd. Dr. Poljak je IEEE Senior Member, te član IEEE Electron Devices Society i Hrvatske udruge MIPRO. Od 2017. godine je predsjednik Zajedničkog odjela ED/SSC Hrvatske sekcije IEEE. Dr. Poljak je dobitnik Državne nagrade za znanost (2017.), Godišnje nagrade sveučilišnih nastavnika i znanstvenika u Zagrebu (2017.), Nagrade za znanost FER-a za svjetski priznati istraživački rezultat (2016.), Nagrade Vera Johanides za mlade znanstvenike Akademije tehničkih znanosti Hrvatske (2014.), Srebrne plakete "Josip Lončar" za naročito uspješnu doktorsku disertaciju (2013.), Nagrade za znanost FER-a za iznimno postignuće u istraživačkom radu (2013.) te prestižne Fulbrightove stipendije Vlade SAD-a (2011.).
Nastava
Sveučilišni preddiplomski
- Elektronika 1 (Nositelj)
- Elektronika 1R (Nositelj)
- Elektronika 2 (Nositelj)
- Mikro i nano elektronički elementi (Nositelj)
- Osnove elektronike (Nositelj)
- Praktikum elektroničkih elemenata i sklopova (Nositelj)
- Projekt (Predavanja)
- Projekt (Predavanja)
- Projekt iz programske potpore (Predavanja)
- Projekt iz programske potpore (Predavanja)
- Završni rad (Predavanja)
- Završni rad (Predavanja)
Sveučilišni diplomski
- Modeliranje elektroničkih komponenti za integrirane sklopove (Nositelj)
- Diplomski projekt (Predavanja)
- Diplomski rad (Predavanja)
- Diplomski rad (Predavanja)
- Diplomski seminar (Predavanja)
Kompetencije
-
Circuits and systems
Circuit simulation Integrated circuit modeling Very large scale integration MOS integrated circuits Silicon-on-insulator Integrated circuit technology CMOS technology Logic devices -
Electron devices
Quantum well devices Quantum wells Semiconductor devices Quantum dots Semiconductor device modeling Tunneling Resonant tunneling devices -
Engineering – general
Electrical engineering -
Mathematics
Linear algebra Boundary conditions Differential equations Eigenvalues and eigenfunctions Boltzmann equation Finite difference methods Iterative methods Numerical analysis Newton method Numerical simulation Sparse matrices -
Nanotechnology
Nanoelectronics Nanomaterials Nanoscale devices -
Instrumentation and measurement
Semiconductor device measurement -
Science – general
Quantum mechanics Density functional theory Quantum capacitance Schrodinger equation Tunneling Solid-state physics -
Computers and information processing
Parallel programming
Profesionalni interesi i članstva
Istraživački interesi:
- napredne nanokomponente za elektroniku, senzore i neuromorfne sklopove na nanoskali
- fizička mikro i nanoelektronika, poluklasični i kvantni transport
- numeričko modeliranje i simulacije - od atomističke skale do kompaktnih modela elemenata za sklopovske simulacije
- paralelno programiranje i računanje u heterogenim okruženjima (C, OpenMP, MPI, BLAS, LAPACK, Nvidia CUDA)
- 2D materijali (grafen, silicen, fosforen, itd.) i nove paradigme za elektroniku budućnosti (spintronika, memristori)
Članstva u znanstvenim i strukovnim društvima:
- IEEE Senior Member
- IEEE, IEEE Electron Devices Society
- Hrvatska udruga MIPRO
Osobni podaci
Izabrani projekti
- Voditelj projekta, Computational design of nanotransistors based on novel 2D materials (2020-2025, sponzor: HRZZ)
- Voditelj projekta, Silicene nanostructures for nanoelectronics applications (2017-2018, sponzori: NVIDIA Corporation & FER Start)
- Istraživač (poslijedoktorand), High-Performance Semiconductor Devices for Wireless Circuit and Optical Detection Applications - HIPERSEMI (2014-2018, sponzor: HRZZ; voditelj: prof. dr. sc. T. Suligoj)
- Istraživač (doktorand), Nanometarski elektronički elementi i sklopovske primjene (2007-2013, sponzor: MZOŠ RH; voditelj: prof. dr. sc. T. Suligoj)
- Istraživač, Horizontal current bipolar transistor (HCBT) for 0.18 μm BiCMOS integration (2008-2009, sponzor: Asahi Kasei Microdevices Co., Ltd., Japan; voditelj: prof. dr. sc. T. Suligoj)
- Istraživač (Fulbright Fellow), Atomistic simulations of graphene nanoribbons: Bandstructure and quantum transport (2011-2012, sponzor: FENA; voditelj: prof. dr. sc. K. L. Wang)
Povijest zaposlenja
2017. - danas: docent (FER)
2017.: izabran u zvanje viši znanstveni suradnik
2014.: izabran u zvanje znanstveni suradnik
2013. - 2017.: poslijedoktorand/viši asistent (FER)
2011. - 2012.: Fulbright Fellow na University of California Los Angeles (UCLA)
2007. - 2013.: znanstveni novak/asistent (FER)