Fundamentals of microelectronics

Course Description

Components of digital integrated circuits. Scaled MOS transistors. Short channel effects. Speed limitations of transistors. Memory cells. Image sensors. MOS capacitance. Charge coupled devices (CCD). Active pixel CMOS sensors. Image sensor technology. Active matrix display devices. Thin film transistors (TFT). TFT display integration. Introduction to analog integrated circuits. Basic integrated circuit design rules. Basic amplifier configurations. Stability of operational amplifiers and compensation. Design of one-stage and multi-stage operational amplifiers. Important operational amplifier configurations. Fully differential amplifier.

Learning Outcomes

  1. Explain physical operation principles of advanced CMOS transistors
  2. Explain scaling of CMOS structures
  3. Analyze short-channel effects
  4. Explain physical operating principles of image sensors
  5. Distinguish the structure and electrical characteristics of flat-panel displays
  6. Explain the operation of basic building blocks of integrated circuits
  7. Analyze and design single-stage and multi-stage operational amplifiers
  8. Explain important configurations of operational amplifiers and their characteristics
  9. Explain DC, AC and transient specifications of operational amplifiers
  10. Analyze the stability and apply frequency compensation of amplifiers

Forms of Teaching







Week by Week Schedule

  1. Velocity saturation, Threshold voltage, Drain Induced Barrier Lowering (DIBL), Punchthrough
  2. Energy band diagram, Capacitance-voltage characteristics, Oxide charges, Body effect
  3. Charged Coupled Devices (CCD), Image sensor technologies, CMOS Active Pixel Sensors (APS), Data read-out and system integration
  4. Moore's law; Scaling rules, Electrostatic limitations, Physical limitations
  5. Advanced CMOS devices (FinFET, Ultra-thin body Double-gate), High-k, metal gate
  6. Carrier transport, Advanced materials (III-V CMOS, nano-tubes, graphene, Ge)
  7. Thin-film transistors, technology and characteristics, Structure and characteristics of Liquid Crystal Displays (LCDs), Structure and characteristics of Plasma Displays, Structure and characteristics of Organic LED Displays (OLEDs)
  8. Midterm exam
  9. Analog electronics, applications, challenges, comparison with digital electronics, NMOS and PMOS transistor structure, current-voltage characteristics, small-signal dynamic parameters, MOS transistor small-signal model, MOS and bipolar transistor comparison
  10. Noise in resistors, diodes, MOS and bipolar transistors, Amplifier noise figure
  11. Component mismatch, choosing component value and dimensions, Distortion, Amplifier bias networks, setting of transistor dimensions
  12. Amplifier small-signal analysis, gain, bandwidth, Amplifier design rules, choosing transistor dimensions, goals, limitations, Basic single-stage amplifier configurations, cascode amplifier
  13. Basic configurations of two-stage operational amplifiers, Amplifier stability analysis, dominant and non-dominant poles, zeros
  14. Design rules for maximum gain-bandwidth product, Three-stage amplifiers and design rules
  15. Final exam

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(.), Willy M. Sansen, Analog Design Essentials, Springer, 2006.,
(.), R. Jacob Baker, CMOS Circuit Design, Layout, and Simulation, 3rd Edition, IEEE Press, 2010.,
Yuan Taur, Tak H. Ning (2013.), Fundamentals of Modern VLSI Devices, Cambridge University Press
Sima Dimitrijev (2006.), Principles of Semiconductor Devices, Oxford University Press, USA

For students


ID 222587
  Winter semester
L3 English Level
L1 e-Learning
45 Lectures
15 Exercises
4 Laboratory exercises

Grading System

87 Excellent
75 Very Good
62 Good
50 Acceptable