Micro and Nano Electron Devices

Learning Outcomes

  1. define the rules of semiconductor technology development
  2. explain the physical principles of advanced transistors
  3. explain the scaling of MOS structures
  4. analyze short channel effects
  5. identify the limitations of advanced transistors
  6. explain the effect of technological parameters on electrical characteristics of electron devices
  7. compare the advanced materials for future transistors
  8. analyze semiconductor image sensors and acquisition systems

Forms of Teaching

Lectures

Exercises

Independent assignments

Laboratory

Week by Week Schedule

  1. Energy band diagram
  2. Capacitance-voltage characteristics
  3. Oxide charges, Body effect
  4. Charged Coupled Devices (CCD), Image sensor technologies
  5. CMOS Active Pixel Sensors (APS)
  6. Data read-out and system integration
  7. Velocity saturation, Threshold voltage
  8. Midterm exam
  9. Drain Induced Barrier Lowering (DIBL), Punchthrough
  10. Moore's law; Scaling rules
  11. Electrostatic limitations, Physical limitations
  12. Advanced CMOS devices (FinFET, Ultra-thin body Double-gate)
  13. High-k, metal gate, Carrier transport
  14. Advanced materials (III-V CMOS, nano-tubes, graphene, Ge)
  15. Final exam

Study Programmes

University undergraduate
Computing (study)
Elective Courses (5. semester)
Electrical Engineering and Information Technology (study)
Elective Courses (5. semester)

Literature

(.), Y. Taur, T. Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press,
(.), S. Dimitrijev, Understanding Semiconductor Device, Oxford Press,
(.), P. Biljanović. Poluvodički elektronički elementi. Školska knjiga,
(.), S. Sze, K. K. Ng, Physics of Semiconductor Devices, John Wiley & Sons,

General

ID 183441
  Winter semester
5 ECTS
L3 English Level
L1 e-Learning
45 Lectures
15 Exercises
4 Laboratory exercises
0 Project laboratory