Advanced Micro and Nano Electronic Devices

Data is displayed for academic year: 2023./2024.

Lecturers

Prof.
Marko Koričić
Prof.
Tomislav Suligoj
Assoc. Prof.
Mirko Poljak

Course Description

Electronic and transport properties of semiconductors. Energy bands and heterostructures. Semiclassical carrier transport, scattering, mobility and velocity saturation. Quantum effects and devices based on quantum wells. Modern high-speed electron devices. Technology of Si and SiGe bipolar transistors. Compound high electron mobility transistors (HEMT). Compound heterojunction bipolar transistors (HBT). Characteristics of integrated power devices (LDMOS, HBT, HEMT, thyristors, IGBT). Principles and technology of solid-state light sources (LED, lasers) and semiconductor photodetectors (pin diodes, avalanche photodiodes, phototransistors). Technology of modern displays (TFT, LCD, LED, OLED). Overview of 2D materials with a focus on the properties of graphene. Graphene-based electronic and optoelectronic devices. Towards quasi-ballistic and ballistic transport. Fundamentals of quantum transport.

Study Programmes

University graduate
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Learning Outcomes

  1. Explain the operating principles of ultra high-speed electron devices
  2. Interpret the electrical characteristics of ultra high-speed electron devices
  3. Explain the operating principles of optoelectronic and photonic devices
  4. Interpret the electrical characteristics of optoelectronic and photonic devices
  5. Explain the operating principles of high-power electron devices
  6. Interpret the electrical characteristics of high-power electron devices
  7. Distinguish the structure and electrical characteristics of flat-panel displays

Forms of Teaching

Lectures

Lectures

Laboratory

Laboratory

Grading Method

Continuous Assessment Exam
Type Threshold Percent of Grade Threshold Percent of Grade
Laboratory Exercises 0 % 20 % 0 % 0 %
Mid Term Exam: Written 0 % 40 % 0 %
Final Exam: Written 0 % 40 %
Exam: Written 50 % 50 %
Exam: Oral 50 %

Week by Week Schedule

  1. Bandstructure of Si, Ge, GaAs. Density of states, density of carriers.
  2. Effective mass approximation. Energy bands and heterostructures.
  3. Semiclassical carrier transport. Carrier scattering and mobility in semiconductors (Si, Ge, GaAs).
  4. High-field transport. Velocity saturation.
  5. Physical description of the operation and characteristics of Si and SiGe HBTs.
  6. Quantum wells and quantum effects in field-effect transistors (MOSFETs, SOI FETs, FinFETs, III-V HEMTs).
  7. Carrier transport in quantum wells. Physical description of the operation and characteristics of III-V HEMTs.
  8. Midterm exam
  9. Integrated power devices. Physical description of the operation and characteristics of LDMOS, IGBTs and thyristors.
  10. Interaction with light. Solid-state light sources (LEDs, lasers).
  11. Semiconductor photodetectors (pin diodes, avalanche photodiodes, phototransistors). Solar cells.
  12. Technology and operation of modern displays (TFT, LCD, LED, OLED).
  13. Overview of 2D materials. Electronic and transport properties of graphene.
  14. Quasi-ballistic and ballistic transport. Fundamentals of quantum transport.
  15. Final exam

Literature

Joachim N. Burghartz (2013.), Guide to State-of-the-Art Electron Devices, John Wiley & Sons
Yuan Taur, Tak H. Ning (2013.), Fundamentals of Modern VLSI Devices, Cambridge University Press
Petar Biljanović (2004.), Poluvodički elektronički elementi, Školska knjiga
S. N. Sze (1990.), High-Speed Semiconductor Devices, Wiley-Interscience
Mark Lundstrom (2000.), Fundamentals of Carrier Transport, Cambridge University Press
Mirko Poljak (2023.), Kvantni transport na nanoskali, Element

For students

General

ID 222503
  Winter semester
5 ECTS
L1 English Level
L1 e-Learning
45 Lectures
0 Seminar
0 Exercises
15 Laboratory exercises
0 Project laboratory
0 Physical education excercises

Grading System

90 Excellent
75 Very Good
60 Good
50 Sufficient

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