Modeling of Silicon Bipolar Transistor's Current Gain at Cryogenic Temperatures Down to 40 K

High-resolution spatial responsivity of PureB single-photon avalanche diodes using focused-laser scanning

Physical Mechanisms Behind the Current Increase in Silicon Bipolar Transistors at Cryogenic Temperatures

Horizontal Current Bipolar Transistor fT and fmax Recovery at Cryogenic Temperatures

The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures

Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K

Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS

Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS

Impact of Buffer Al-Content on 2DEG Mobility and Scattering Mechanisms in Double-Heterostructure GaN HEMTs

Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p ⁺n photodiodes

The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures

Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers

Theoretical Prediction of Mobility Improvement in GaN-Based HEMTs at High Carrier Densities

Implantation site design for large area diamond quantum device fabrication

Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs

Future developments of radiation tolerant sensors based on the MALTA architecture

The Effect of Collector Region Design on Large- Signal Performance of Horizontal Current Bipolar Transistor (HCBT)

Horizontal Current Bipolar Transistor DC Performance at Cryogenic Temperatures

Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance

Detection of Low-Penetrating Ions in Diamond at Room Temperature

Detection of Single Low-Penetrating Ions in Diamond

Detection of Single Low-Penetrating Ions in Diamond

Latest developments and characterisation results of the MALTA sensors in TowerJazz 180nm for High Luminosity LHC

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

MALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technology

A 1-<i>μ</i>W Radiation-Hard Front-End in a 0.18-<i>μ</i>m CMOS Process for the MALTA2 Monolithic Sensor

Layout-Dependent Noise Performance of Single- Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology

Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm

Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC

Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits

Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework

Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes

Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications

Radiofrequency power amplifiers in horizontal current bipolar transistor technology

Evaluation of the Radiation Hardness of Photodiodes in 180-nm CMOS Technology for Medical Applications

A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors

Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application

Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer

Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions

Mini-MALTA: radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Ballistic performance of FETs based on phosphorene nanoribbons

Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor

On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

Circuits for measuring ultraviolet radiation on satellites

Optimization of germanium fotodetector structures with an amorphous boron layer

Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode

Radiation hard monolithic CMOS sensors with small electrode size for the ATLAS experiment in the HL-LHC

Doherty Power Amplifier in Horizontal Current Bipolar Transistor (HCBT) Technology

Recent measurements on MiniMALTA, a radiation hard CMOS sensor with small collection electrodes for ATLAS

Horizontal Current Bipolar Transistor (HCBT) Technology for High Linearity RF Mixers

Measurement of RF Linear Operating Area of Bipolar Transistors

On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes

Design of radiation-hard CMOS sensors for particle detection applications

MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade

Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C

Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers

Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements

Design of bipolar transistor class A RF power amplifier

The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs

Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates

Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35μm CMOS technology

Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays

2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors

Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT)

Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology

Class A RF power amplifier with horizontal current bipolar transistor

Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures

Improving the Horizontal Current Bipolar Transistor Breakdown Voltage by Floating Field Plates

Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays

Impact of the Local p-well Substrate Parameters on the Electrical Performance of the Double- Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor

Physical characteristics and applications of nanometer thin boron-on-silicon layers in silicon detector devices

Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions

Analysis of Hot Carrier-Induced Degradation of Horizontal Current Bipolar Transistor (HCBT)

TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design

Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors

Analysis of Photodiodes for Detection of Ultraviolet Light

Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT)

A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

Characteristics of radio frequency integrated circuits and device reliability in horizontal current bipolar transistor technology

Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects

Analysis of Single Photon Avalanche Photodetector

Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects

Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials

Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes

Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment

Design of Quenching Circuits for Geiger-mode Single Photon Avalanche Photodiodes

Single Photon Avalanche Photodiodes Arrays

Fully-integrated Voltage Controlled Oscillator in Low-cost HCBT Technology

A Low-Cost 180nm BiCMOS Technology with Horizontal Current Bipolar Transistor (HCBT) for Wireless Communication ICs

Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment

Impact of the Emitter Polysilicon Thickness on the Performance of High-Linearity Mixers with Horizontal Current Bipolar Transistors

Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

Reliability Degradation Mechanisms of Horizontal Current Bipolar Transistor

Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels

Impact of Emitter Interface Treatment on the Horizontal Current Bipolar Transistor (HCBT) Characteristics and RF Circuit Performance

Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices

Design of a scalable model of GaN devices - temperature effects and Schottky diode models

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost

Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region

Solving practical numerical problems in microelectronic devices and semiconductor technology

Analysis of Avalanche Photodiodes with Floating Guard Rings

Design of a scalable model of GaN devices

Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint

Modeling of Electron Transport in Gallium-Nitride Field-Effect Transistors

Large Area Reverse Structure Avalanche Photodiode Simulations

Avalanche Photodiode Simulations

PureB layers – XRD measurements and temperature characteristics

Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs

Analysis of high-frequency characteristics of FinFET structures for communication circuits

Comparison of RF performance between 20 nm-gate bulk and SOI FinFET

Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs

Examination of Horizontal Current Bipolar Transistor (HCBT) Reliability Characteristics

Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje

Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer

XPS Data interpretation of PureB layers

Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers

Influence of substrate type and quality on carrier mobility in graphene nanoribbons

Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons

Carrier transport in low-dimensional nanoelectronic devices

Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Examination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region

Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons

Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling

Optimization of diode capacitance of Annular BS detector

Impact of Bipolar Transistor Parameters on the Characteristics of the Double-Balanced Mixer

On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials

Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p⁺n Junctions

Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons

Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm

Structural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films

HIGH-SPEED, HIGH-SENSITIVITY P-I-N PHOTODIODE ANALYSIS

ELECTRICAL PROPERTIES OF FABRICATED TRANSISTOR REGIONS IN ADVANCED SILICON BIPOLAR TECHNOLOGIES

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Analiza brzine rada i prinosa procesiranih sklopova emiterski vezane logike u tehnologiji bipolarnog tranzistora s horizontalnim tokom struje

Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics

Integrated radiofrequency circuit design in horizontal current bipolar transistor (HCBT) technology

Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping

Optimization of the perimeter doping of ultrashallow p⁺-n^--n^- photodiodes

Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology

Emitter Coupled Logic (ECL) Circuit Testing and Measurements in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology – 2nd Lot

Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs

Tanki slojevi fosforom visokodopiranog polikristalnog silicija s mogućom primjenom na području termoelektrika

BVCEO Engineering in SOI LBT Structure with Top Contacted Base

Examination of Novel High-voltage Double-emitter Horizontal Current Bipolar Transistor (HCBT)

Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs

Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

2-D front- and back-gate potential distribution model of submicrometer VFD SONFET

Effect of parasitic RLC parameters in bias networks on ECL delay time

Projektiranje dvostruko balansiranog mješala u integriranoj bipolarnoj tehnologiji

Implementacija sklopova emiterski vezane logike u 180 nm tehnologiji bipolarnog tranzistora s horizontalnim tokom struje

Razvoj testnih struktura i demonstracijskih sklopova za bipolarni tranzistor s horizontalnim tokom struje

Optimiranje npn bipolarnog tranzistora sa emiterom u v-žlijebu

Optimiranje strukture fotodiode za detekciju na određenim valnim duljinama

Utjecaj tehnoloških parametara na električke karakteristike fotodioda

Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs

Extrinsic base effect on the Horizontal Current Bipolar Transistor (HCBT) electrical characteristics

Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations

Collector Region Design and Optimization in Horizontal Current Bipolar Transistor (HCBT)

Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces

Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology

Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs

Ultra-high aspect-ratio FinFET technology

Optimization of Stress Distribution in Sub-45 nm CMOS Structures

Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology

Horizontal Current Bipolar Transistor (HCBT) for the Low-cost BiCMOS Technology

FinFET Considerations for 0.18 um Technology

Emitter Coupled Logic (ECL) Circuit Design in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology

Characteristics of ultra-thin body FinFET structures under the influence of stress

Influence of scaling on the characteristics of scaled CMOS transistors

Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films

Optimization of Collector and Base Regions of a Novel Horizontal Current Bipolar Transistor (HCBT) Structure

Analysis of a bipolar transistor for photo-signal detection

Analysis of a bipolar transistor with an emitter fabricated in v-groove

Stress Effect in Ultra-Narrow FinFET Structures

Improving bulk FinFET DC performance in comparison to SOI FinFET

Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs

Power MOS Transistors Integrated in Standard CMOS Technology without any Increase in Process Complexity

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Suppression of Corner Effects in Triple-Gate Bulk FinFETs

Anaysis of germanium MOS transistors

Compact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility

Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology

Fin technology for wide-channel FET structures

Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation

Characterization of ultra-thin body FinFET structure

Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode /

Silicon-Etching For Ultra-High Aspect-Ratio FinFET

Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs

Analysis of power transistors with additional depletion-mechanisms in standard CMOS technology

FinFET technology for wide-channel devices with ultra-thin silicon body

Influence of impurity concentration on the characteristics of horizontal-current bipolar transistor in 180 nm CMOS technology

First sub-30nm vertical Silicon-On-Nothing MOSFET

SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics

Vertical Silicon-on-Nothing FET: Subthreshold Slope Calculation Using Compact Capacitance Model

Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model

Measurements and simulations of power transistors with long drift region in standard CMOS technology

Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process – New Planarization of Polysilicon, Simulation and Mask Design

Measurements of horizontal-current bipolar transistor fabricated in 180 nm CMOS technology

Influence of technology- and topology-dependent parameters on the characteristics of horizontal-current bipolar transistor

Analysis of a double-gate MOSFET based on FinFET technology

Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process

Technological constrains of bulk FinFET structure in comparison with SOI FinFET

Vertical silicon-on-nothing FET: analytical model of subthreshold slope

Sub-100 nm Silicon Nitride Hard-Mask for High Aspect Ratio Silicon Fins

Vertical Silicon-on-Nothing FET: Treshold Voltage Calculation Using Compact Capacitance Model

Vertical Silicon-on-Nothing FET: Capacitance-Voltage Compact Modeling

Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs

Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation

Properties of Lateral Bipolar Transistors in SiGe Technology

A BVCEO Engineering in Horizontal Current Bipolar Transistor (HCBT) Technology

Influence of Silicon Body Thickness of Vertical Silicon on Nothing (SON) MOSFET with Nitride Nate Dielectric on Electrical Characteristics

Application of spacer hard-masks for sub-100 nm wide silicon fin-etching

A New HCBT with a Partially Etched Collector

Vertical SiGe-based Silicon-on-Nothing (SON) Technology for Sub-30nm MOS Devices

Characteristics of 30 nm Long Vertical Silicon-on-Nothing (SON) MOSFET

Vertical SON MOS structure

Analysis Of Horizontal Current Bipolar Transistor Specific Effects

Scaled Horizontal Current Bipolar Transistor

Horizontal Current Bipolar Transistor (HCBT) Process Variations for Future RF BiCMOS Applications

A Novel Isolation of Pillar-like Structures by the Chemical-Mechanical Polishing and Etch-Back Process

Improvement of BVCEO vs fT Trade-off by Charge Sharing Effect

A Novel Low-cost Horizontal Current Bipolar Transistor (HCBT) with the Reduced Parasitics

Scaling Properties of Vertical Silicon-on-Nothing (SON) MOSFETs

Improvement of fT vs BVCEO Trade-off by Extrinsic Base Design Optimization

Influence of technological parameters on electrical characteristics of bipolar structures with horizontal current flow

Silicon-Germanium-Based Combined MBE and CVD Processing for Vertical "Silicon-on-Nothing" (SON) Device Technology

Advanced CMOS elements

Influence of the Charge Sharing Effect on BVCE0 vs fT Trade-off Solution

Lateral Bipolar Transistor's Extrinsic Base Design for Better fT vs BVCEO Solution

A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs

Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base

Fabrication of Horizontal Current Bipolar Transistor (HCBT)

A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs

High-Frequency Analysis of SOI Lateral Bipolar Transistor (LBT) Structure for RF Analog Applications

A New Compact Horizontal Current Bipolar Transistor (HCBT) Fabricated in (110) Wafers

Effect of Extrinsic Base on the High-Frequency Performance of Lateral Bipolar Transistors

Microelectronics

A Novel Horizontal Current Bipolar Transistor for Vertical BiCMOS Integration

Estimation of Deep Trap Concentration Using Capacitance Voltage Measurements

., Novel Direct-Tunneling-Current (DTC) Method for Channel Length Extraction Beyond Sub-50 nm Gate CMOS

Horizontal Current Bipolar Transistor (HCBT): A New Concept of Silicon Bipolar Transistor Technology

The Use of Chemical-Mechanical Polishing and Etch-Back Techniques for Bottom Isolation of Pillar-like Devices

Thermionic Emission Process in Carrier Transport in pn Homojunctions

Voltage and Concentration Dependance of High Frequency Parameters of Narrow Base Bipolar Transistors

The Effective Collector-Base Junction Capacitance

Analysis of electrical and technological characteristics of horizontal current bipolar transistor

50 years of transistor- discovery and consequences

The Analysis of Horizontal Current Bipolar Transistor (HCBT): A Novel Silicon Bipolar Device

Punchthrough Voltage Analyses and its Effect on Bipolar Device Performance