Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers

Impact of Buffer Al-Content on 2DEG Mobility and Scattering Mechanisms in Double-Heterostructure GaN HEMTs

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

Impact of the Ge-Si interfacial barrier on the temperature-dependent performance of PureGaB Ge-on-Si p ⁺n photodiodes

The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor’s (HCBT) Beta Recovery at Cryogenic Temperatures

Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS

Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance

Theoretical Prediction of Mobility Improvement in GaN-Based HEMTs at High Carrier Densities

The Effect of Collector Region Design on Large- Signal Performance of Horizontal Current Bipolar Transistor (HCBT)

Implantation site design for large area diamond quantum device fabrication

Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs

Horizontal Current Bipolar Transistor DC Performance at Cryogenic Temperatures

Future developments of radiation tolerant sensors based on the MALTA architecture

Recent results with radiation-tolerant TowerJazz 180 nm MALTA sensors

Detection of Low-Penetrating Ions in Diamond at Room Temperature

Latest developments and characterisation results of the MALTA sensors in TowerJazz 180nm for High Luminosity LHC

Detection of Single Low-Penetrating Ions in Diamond

Detection of Single Low-Penetrating Ions in Diamond

A 1-<i>μ</i>W Radiation-Hard Front-End in a 0.18-<i>μ</i>m CMOS Process for the MALTA2 Monolithic Sensor

Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm

Layout-Dependent Noise Performance of Single- Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology

MALTA3: Concepts for a new radiation tolerant sensor in the TowerJazz 180 nm technology

Versatile BiCMOS Technology Platform for the Low-cost Integration of Multi-purpose Applications

Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes

Radiofrequency power amplifiers in horizontal current bipolar transistor technology

Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC

Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application

A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors

Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions

Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework

Evaluation of the Radiation Hardness of Photodiodes in 180-nm CMOS Technology for Medical Applications

Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits

Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer

Optimization of germanium fotodetector structures with an amorphous boron layer

Radiation hard monolithic CMOS sensors with small electrode size for the ATLAS experiment in the HL-LHC

Recent measurements on MiniMALTA, a radiation hard CMOS sensor with small collection electrodes for ATLAS

Mini-MALTA: radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Circuits for measuring ultraviolet radiation on satellites

Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor

Measurement of RF Linear Operating Area of Bipolar Transistors

Doherty Power Amplifier in Horizontal Current Bipolar Transistor (HCBT) Technology

Ballistic performance of FETs based on phosphorene nanoribbons

Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode

On the Potential of Lateral BJTs and SiGe HBTs in Advanced CMOS Technologies

Horizontal Current Bipolar Transistor (HCBT) Technology for High Linearity RF Mixers

On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade

Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers

Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C

Design of radiation-hard CMOS sensors for particle detection applications

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology

Class A RF power amplifier with horizontal current bipolar transistor

2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays

Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures

Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT)

Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates

Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35μm CMOS technology

Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μm High- Voltage CMOS Technology

The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors

Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements

The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs

Design of bipolar transistor class A RF power amplifier

Analysis of Photodiodes for Detection of Ultraviolet Light

A High-Voltage Single-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor for BiCMOS Integration

Analysis of Hot Carrier-Induced Degradation of Horizontal Current Bipolar Transistor (HCBT)

TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design

Improving the Horizontal Current Bipolar Transistor Breakdown Voltage by Floating Field Plates

Innovative Bipolar-CMOS Integration for RF Communication Circuits with Low-Cost High-Performance Horizontal Current Bipolar Transistor (HCBT)

Physical characteristics and applications of nanometer thin boron-on-silicon layers in silicon detector devices

Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions

Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors

Impact of the Local p-well Substrate Parameters on the Electrical Performance of the Double- Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor

Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays

Characteristics of radio frequency integrated circuits and device reliability in horizontal current bipolar transistor technology

Single Photon Avalanche Photodiodes Arrays

Fully-integrated Voltage Controlled Oscillator in Low-cost HCBT Technology

A Low-Cost 180nm BiCMOS Technology with Horizontal Current Bipolar Transistor (HCBT) for Wireless Communication ICs

Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment

Design of Quenching Circuits for Geiger-mode Single Photon Avalanche Photodiodes

Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

Reliability Degradation Mechanisms of Horizontal Current Bipolar Transistor

Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects

Impact of the Emitter Polysilicon Thickness on the Performance of High-Linearity Mixers with Horizontal Current Bipolar Transistors

Analysis of Single Photon Avalanche Photodetector

Investigation of Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor Breakdown Mechanisms

Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment

Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects

Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

Solving practical numerical problems in microelectronic devices and semiconductor technology

Impact of Emitter Interface Treatment on the Horizontal Current Bipolar Transistor (HCBT) Characteristics and RF Circuit Performance

Analysis of Avalanche Photodiodes with Floating Guard Rings

Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons

Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices

Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region

Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor With 36 V Breakdown Integrated in BiCMOS at Zero Cost

Design of a scalable model of GaN devices - temperature effects and Schottky diode models

On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels

PureB layers – XRD measurements and temperature characteristics

Large Area Reverse Structure Avalanche Photodiode Simulations

Examination of Horizontal Current Bipolar Transistor (HCBT) Reliability Characteristics

Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs

Design of a scalable model of GaN devices

Analysis of high-frequency characteristics of FinFET structures for communication circuits

Modeling of Electron Transport in Gallium-Nitride Field-Effect Transistors

Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint

Avalanche Photodiode Simulations

Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs

Comparison of RF performance between 20 nm-gate bulk and SOI FinFET

Optimization of Horizontal Current Bipolar Transistor (HCBT) Technology Parameters for Linearity in RF Mixer

Carrier transport in low-dimensional nanoelectronic devices

Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje

Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers

Influence of substrate type and quality on carrier mobility in graphene nanoribbons

Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons

XPS Data interpretation of PureB layers

Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons

Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Optimization of diode capacitance of Annular BS detector

Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling

Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p⁺n Junctions

Impact of Bipolar Transistor Parameters on the Characteristics of the Double-Balanced Mixer

Examination of Horizontal Current Bipolar Transistor (HCBT) with Double and Single Polysilicon Region

On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials

Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons

Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology

Optimization of the perimeter doping of ultrashallow p⁺-n^--n^- photodiodes

Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm

Analysis of speed and yield of processed emitter coupled logic circuits in technology of horizontal current bipolar transistor

Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs

Emitter Coupled Logic (ECL) Circuit Testing and Measurements in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology – 2nd Lot

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

ELECTRICAL PROPERTIES OF FABRICATED TRANSISTOR REGIONS IN ADVANCED SILICON BIPOLAR TECHNOLOGIES

Integrated radiofrequency circuit design in horizontal current bipolar transistor (HCBT) technology

Tanki slojevi fosforom visokodopiranog polikristalnog silicija s mogućom primjenom na području termoelektrika

HIGH-SPEED, HIGH-SENSITIVITY P-I-N PHOTODIODE ANALYSIS

Structural and Electronic Properties of Heavily Phosphorus Doped Polycrystalline Silicon Thin Films

BVCEO Engineering in SOI LBT Structure with Top Contacted Base

Heavily phosphorus doped polycrystalline silicon with the application in the field of thermoelectrics

Examination of Novel High-voltage Double-emitter Horizontal Current Bipolar Transistor (HCBT)

Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping

Horizontal Current Bipolar Transistor With a Single Polysilicon Region for Improved High-Frequency Performance of BiCMOS ICs

Effect of parasitic RLC parameters in bias networks on ECL delay time

Collector Region Design and Optimization in Horizontal Current Bipolar Transistor (HCBT)

Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications

Razvoj testnih struktura i demonstracijskih sklopova za bipolarni tranzistor s horizontalnim tokom struje

Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs

Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces

Design considerations for integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm bulk CMOS technology

Ultra-high aspect-ratio FinFET technology

Analysis of Subthreshold Conduction in Short-Channel Recessed Source/Drain UTB SOI MOSFETs

Implementacija sklopova emiterski vezane logike u 180 nm tehnologiji bipolarnog tranzistora s horizontalnim tokom struje

Utjecaj tehnoloških parametara na električke karakteristike fotodioda

Optimiranje strukture fotodiode za detekciju na određenim valnim duljinama

Projektiranje dvostruko balansiranog mješala u integriranoj bipolarnoj tehnologiji

2-D front- and back-gate potential distribution model of submicrometer VFD SONFET

Extrinsic base effect on the Horizontal Current Bipolar Transistor (HCBT) electrical characteristics

Optimiranje npn bipolarnog tranzistora sa emiterom u v-žlijebu

Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations

Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs

Optimization of Collector and Base Regions of a Novel Horizontal Current Bipolar Transistor (HCBT) Structure

Influence of scaling on the characteristics of scaled CMOS transistors

Suppression of Corner Effects in Triple-Gate Bulk FinFETs

Analysis of a bipolar transistor for photo-signal detection

FinFET Considerations for 0.18 um Technology

Characteristics of ultra-thin body FinFET structures under the influence of stress

Horizontal Current Bipolar Transistor (HCBT) for the Low-cost BiCMOS Technology

Emitter Coupled Logic (ECL) Circuit Design in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology

Stress Effect in Ultra-Narrow FinFET Structures

Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs

Compact Capacitance Model for Drain-Induced Barrier-Lowering of Vertical SONFET

Power MOS Transistors Integrated in Standard CMOS Technology without any Increase in Process Complexity

Design Considerations for Integration of Horizontal Current Bipolar Transistor (HCBT) with 0.18 μm Bulk CMOS Technology

Analytical Models of Front- and Back-Gate Potential Distribution and Threshold Voltage for Recessed Source/Drain UTB SOI MOSFETs

Improving bulk FinFET DC performance in comparison to SOI FinFET

Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices

Anaysis of germanium MOS transistors

Optimization of Stress Distribution in Sub-45 nm CMOS Structures

Analysis of a bipolar transistor with an emitter fabricated in v-groove

Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility

1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs

Electrical activation of phosphorus by rapid thermal annealing of doped amorphous silicon films

Analysis of a double-gate MOSFET based on FinFET technology

Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode /

Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process – New Planarization of Polysilicon, Simulation and Mask Design

Measurements of horizontal-current bipolar transistor fabricated in 180 nm CMOS technology

Vertical silicon-on-nothing FET: Threshold voltage calculation using compact capacitance model

Vertical Silicon-on-Nothing FET: Subthreshold Slope Calculation Using Compact Capacitance Model

Influence of technology- and topology-dependent parameters on the characteristics of horizontal-current bipolar transistor

Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs

Horizontal Current Bipolar Transistor Structures for Integration with CMOS Technology

SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics

Characterization of ultra-thin body FinFET structure

Silicon-Etching For Ultra-High Aspect-Ratio FinFET

Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation

Fin technology for wide-channel FET structures

FinFET technology for wide-channel devices with ultra-thin silicon body

Influence of impurity concentration on the characteristics of horizontal-current bipolar transistor in 180 nm CMOS technology

Measurements and simulations of power transistors with long drift region in standard CMOS technology

Analysis of power transistors with additional depletion-mechanisms in standard CMOS technology

First sub-30nm vertical Silicon-On-Nothing MOSFET

Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process

Vertical silicon-on-nothing FET: analytical model of subthreshold slope

Sub-100 nm Silicon Nitride Hard-Mask for High Aspect Ratio Silicon Fins

Vertical Silicon-on-Nothing FET: Capacitance-Voltage Compact Modeling

Vertical Silicon-on-Nothing FET: Treshold Voltage Calculation Using Compact Capacitance Model

Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation

Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs

Technological constrains of bulk FinFET structure in comparison with SOI FinFET

A BVCEO Engineering in Horizontal Current Bipolar Transistor (HCBT) Technology

Application of spacer hard-masks for sub-100 nm wide silicon fin-etching

Properties of Lateral Bipolar Transistors in SiGe Technology

Influence of Silicon Body Thickness of Vertical Silicon on Nothing (SON) MOSFET with Nitride Nate Dielectric on Electrical Characteristics

A Novel Isolation of Pillar-like Structures by the Chemical-Mechanical Polishing and Etch-Back Process

Vertical SON MOS structure

Analysis Of Horizontal Current Bipolar Transistor Specific Effects

Horizontal Current Bipolar Transistor (HCBT) Process Variations for Future RF BiCMOS Applications

Vertical SiGe-based Silicon-on-Nothing (SON) Technology for Sub-30nm MOS Devices

Scaled Horizontal Current Bipolar Transistor

Characteristics of 30 nm Long Vertical Silicon-on-Nothing (SON) MOSFET

A New HCBT with a Partially Etched Collector

Scaling Properties of Vertical Silicon-on-Nothing (SON) MOSFETs

A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs

Influence of the Charge Sharing Effect on BVCE0 vs fT Trade-off Solution

Advanced CMOS elements

Lateral Bipolar Transistor's Extrinsic Base Design for Better fT vs BVCEO Solution

Improvement of BVCEO vs fT Trade-off by Charge Sharing Effect

Improvement of fT vs BVCEO Trade-off by Extrinsic Base Design Optimization

A Novel Low-cost Horizontal Current Bipolar Transistor (HCBT) with the Reduced Parasitics

Silicon-Germanium-Based Combined MBE and CVD Processing for Vertical "Silicon-on-Nothing" (SON) Device Technology

Influence of technological parameters on electrical characteristics of bipolar structures with horizontal current flow

Fabrication of Horizontal Current Bipolar Transistor (HCBT)

Investigation of the Extrinsic Base Effect on High Frequency Performance of Lateral Bipolar Transistor (LBT) with Laterally Contacted Base

A Low-cost Horizontal Current Bipolar Transistor (HCBT) Technology for the BiCMOS Integration with FinFETs

High-Frequency Analysis of SOI Lateral Bipolar Transistor (LBT) Structure for RF Analog Applications

Microelectronics

A New Compact Horizontal Current Bipolar Transistor (HCBT) Fabricated in (110) Wafers

A Novel Horizontal Current Bipolar Transistor for Vertical BiCMOS Integration

Estimation of Deep Trap Concentration Using Capacitance Voltage Measurements

Effect of Extrinsic Base on the High-Frequency Performance of Lateral Bipolar Transistors

., Novel Direct-Tunneling-Current (DTC) Method for Channel Length Extraction Beyond Sub-50 nm Gate CMOS

Horizontal Current Bipolar Transistor (HCBT): A New Concept of Silicon Bipolar Transistor Technology

The Use of Chemical-Mechanical Polishing and Etch-Back Techniques for Bottom Isolation of Pillar-like Devices

Voltage and Concentration Dependance of High Frequency Parameters of Narrow Base Bipolar Transistors

The Effective Collector-Base Junction Capacitance

Thermionic Emission Process in Carrier Transport in pn Homojunctions

Analysis of electrical and technological characteristics of horizontal current bipolar transistor

The Analysis of Horizontal Current Bipolar Transistor (HCBT): A Novel Silicon Bipolar Device

50 years of transistor- discovery and consequences

Punchthrough Voltage Analyses and its Effect on Bipolar Device Performance