The page provides a list of national and international projects where FER participates or has participated as a project coordinator or partner.
Project database
Projects
Project
Acronym:
-
Name:
A New Horizontal Current Bipolar Transistor (HCBT) for 0.18μm BiCMOS Integration – Device and Circuit Optimization
Project status:
From: 2008-12-11
To: 2009-12-10
(Completed)
Contract number:
-
Action line:
-
Type (Programme):
INDUSTRY
Instrument:
Project cost:
-
Project funding:
-
Project coordinator
Organisation Name:
Asahi Kasei EMD Co., Ltd.
Organisation adress:
1-23-7 Nishi-Shinjuku, Shinjuku-ku, Tokyo 160-0023
Organisation country:
Japan
Contact person name:
-
Contact person email:
Croatian partner
Organisation name:
Fakultet elektrotehnike i računarstva
Organisation address:
ZEMRIS, Unska 3, 10000 Zagreb
Contact person name:
Tomislav Suligoj
Contact person tel:
+385 1 6129898
Contact person fax:
+385 1 6129653
Contact person e-mail:
Partners
Short description of project
The goal of the project is to develop a novel bipolar transistor structure, which can be integrated with 0.18μm CMOS process and to optimize its electrical characteristics. A novel bipolar device is based on the Horizontal Current Bipolar Transistor (HCBT) invented at the Faculty of Electrical Engineering and Computing, University of Zagreb. HCBT optimization for the wireless communication circuits must be carried our with respect to noise, linearity and power consumption.
Short description of the task performed by Croatian partner
Design of the the novel Horizontal Current Bipolar Transistor (HCBT) Technology and integration with 0.18um CMOS process. Process and device simulation. Data interpretation and modeling. Design of demonstration circuits using HCBT, such as Emitter Coupled Logic (ECL) ring oscillators. Characterization and measurments of ECL circuits.