On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology

Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode

Diode design for studying material defect distributions with avalanche–mode light emission

Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range

Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices

Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C

Reverse breakdown and light-emission patterns studied in Si PureB SPADs

Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers

Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon

2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures

Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays

Physical characteristics and applications of nanometer thin boron-on-silicon layers in silicon detector devices

TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design

Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays

Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment

Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment

Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes

Solving practical numerical problems in microelectronic devices and semiconductor technology

Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure

Design of a scalable model of GaN devices

PureB layers – XRD measurements and temperature characteristics

Avalanche Photodiode Simulations

Large Area Reverse Structure Avalanche Photodiode Simulations

XPS Data interpretation of PureB layers

Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers

Optimization of diode capacitance of Annular BS detector

Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p⁺n Junctions

Emitter Coupled Logic (ECL) Circuit Testing and Measurements in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology – 2nd Lot

Boron-layer silicon photodiodes for high-efficiency low-energy electron detection

Optimization of the perimeter doping of ultrashallow p⁺-n^--n^- photodiodes

Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes

Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

Optimization of Stress Distribution in Sub-45 nm CMOS Structures

Characteristics of ultra-thin body FinFET structures under the influence of stress

Stress Effect in Ultra-Narrow FinFET Structures