Na FER-u postoji više zaposlenika s imenom

M-center in low-energy electron irradiated 4H-SiC
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer
On the Many Applications of Nanometer-Thin Pure Boron Layers in IC and Microelectromechanical Systems Technology
PureB diode fabrication using physical or chemical vapor deposition methods for increased back-end-of-line accessibility
Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si
Broadband PureGaB Ge-on-Si photodiodes responsive in the ultraviolet to near-infrared range
Diode design for studying material defect distributions with avalanche–mode light emission
Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers
Limits on thinning of boron layers with/without metal contacting in PureB Si (photo)diodes
Minimization of dark counts in PureB SPADs for NUV/VUV/EUV light detection by employing a 2D TCAD-based simulation environment
Reverse breakdown and light-emission patterns studied in Si PureB SPADs
Back-end-of-Line CMOS-Compatible Diode Fabrication with Pure Boron Deposition Down to 50°C
Investigation of light-emission and avalanche- current mechanisms in PureB SPAD devices
Indirect optical crosstalk reduction by highly- doped backside layer in single-photon avalanche diode arrays
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures
2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment
Test structures without metal contacts for DC measurement of 2D-materials deposited on silicon
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions
Indirect optical crosstalk reduction by highly- doped backside layer in PureB single-photon avalanche diode arrays
TCAD-based Simulation Study of the 2D Dark Count Rate in InGaAs/InP Single Photon Avalanche Diodes Employing Standoff Breakdown Suppression Design
Physical characteristics and applications of nanometer thin boron-on-silicon layers in silicon detector devices
Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes
Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment
Examination of the InP/InGaAs single-photon avalanche diodes by establishing a new TCAD-based simulation environment
Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches
Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure
Rješavanje praktičnih problema iz mikroelektroničkih komponenti i poluvodičke tehnologije
Avalanche Photodiode Simulations
Large Area Reverse Structure Avalanche Photodiode Simulations
PureB layers – XRD measurements and temperature characteristics
Design of a scalable model of GaN devices
Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers
XPS Data interpretation of PureB layers
Modelling of Electrical Characteristics of Ultrashallow Pure Amorphous Boron p<sup>+</sup>n Junctions
Optimization of diode capacitance of Annular BS detector
Series Resistance Optimization of High-Sensitivity Si-based VUV Photodiodes
Optimization of the perimeter doping of ultrashallow p<sup>+</sup>-n<sup>-</sup>-n<sup>-</sup> photodiodes
Boron-layer silicon photodiodes for high-efficiency low-energy electron detection
Emitter Coupled Logic (ECL) Circuit Testing and Measurements in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology – 2nd Lot
Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection
Stress Effect in Ultra-Narrow FinFET Structures
Karakteristike FinFET struktura s ultra tankim tijelom pod utjecajem naprezanja
Optimization of Stress Distribution in Sub-45 nm CMOS Structures
Kompetencije
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Instrumentation and measurement
Semiconductor device measurement Semiconductor device testing -
Lasers and electrooptics
Photodetectors Photodiodes -
Materials, elements, and compounds
Boron Amorphous materials Amorphous semiconductors III-V semiconductor materials Wide band gap semiconductors Boron -
Nanotechnology
Semiconductor nanostructures -
Sensors
Infrared detectors Photodetectors Semiconductor radiation detectors Silicon radiation detectors X-ray detectors Semiconductor detectors -
Systems engineering and theory
Semiconductor device modeling Semiconductor process modeling