Pristupačnost
Impact of AlGaN and InAlN Barrier Layer Materials on Double-Heterostructure GaN HEMT's Conduction Properties
Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers
Impact of Buffer Al-Content on 2DEG Mobility and Scattering Mechanisms in Double-Heterostructure GaN HEMTs
Teaching
University undergraduate
- Electronics 1 (Lecturer in charge, Laboratory exercises)
- Electronics 1 (Laboratory exercises)
- Electronics 2 (Laboratory exercises)
- Electronics 2 (Laboratory exercises)
University graduate
- Semiconductor Technology (Laboratory exercises)