Semiconductor Technology
Data is displayed for the academic year: 2024./2025.
Lecturers
Laboratory exercises
Course Description
Progress and development of electronics and semiconductor technology. Principles and implication of scaling and Moore s law. Silicon crystal structure. Crystal growth and production of silicon wafers. Planar technology. Principles of process integration. Modern CMOS technology. Integration of fabrication steps in planar technology. Semiconductor doping methods: diffusion and ion implantation. Dopant distributions in silicon. Physical mechanisms of doping. Selectivity in semiconductor technology, lithography. Principles of isolation and passivization, thermal oxidation. Material removal in semiconductor technology, etching. Deposition of materials in semiconductor technology. Methods of on-chip interconnections of devices and circuit blocks. Metallization systems. Implementation of sensors in semiconductor technology. Micro electro mechanical systems. Limitations of semiconductor technology. New 3D semiconductor structures. Advanced 2D materials. Nano-technology.
Study Programmes
University graduate
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[FER3-HR] Electronic and Computer Engineering - profile
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[FER3-HR] Electronics - profile
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[FER3-HR] Information and Communication Engineering - profile
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[FER3-HR] Network Science - profile
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[FER3-HR] Software Engineering and Information Systems - profile
Elective Courses
(1. semester)
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[FER2-HR] Electronics - profile
Recommended elective courses
(3. semester)
Learning Outcomes
- describe the scaling of semiconductor electron devices
- explain the silicon crystal structure
- explain the process steps in semiconductor fabrication technology
- analyze the cross-sections of transistor structures
- identify phisical priciples of fabrication steps in semiconductor technology
- distinguish the limitations of modern semiconductor technology
- combine the process steps for the MOS and bipolar transistor fabrication
Forms of Teaching
Lectures
Lectures
Seminars and workshopsSeminars
ExercisesTutorials
LaboratoryLaboratory
Grading Method
Continuous Assessment | Exam | |||||
---|---|---|---|---|---|---|
Type | Threshold | Percent of Grade | Threshold | Percent of Grade | ||
Seminar/Project | 0 % | 20 % | 0 % | 15 % | ||
Mid Term Exam: Written | 0 % | 30 % | 0 % | |||
Final Exam: Written | 0 % | 25 % | ||||
Final Exam: Oral | 25 % |
Week by Week Schedule
- Process integration, Front-end fabrication and limitations
- Back-end fabrication and limitations, Self-alignment and merging
- Semiconductor material properties, defects, impurities, specifications
- Diffusion
- Ion implantation, Doping profiles; Limitations
- Doping profiles; Limitations, Photolithography (projection and proximity)
- Advanced lithography techniques (e-beam, ultra-violet, stamping)
- Midterm exam
- Etching (principles, methods and equipment)
- Deposition (PVD, CVD); Implementations and limitations
- Oxidation (methods, models and limitations)
- Interconnects (technology, materials and characteristics), Metallization (technology, materials, characteristics)
- Electrical characteristics and limitations, Micro-electro-mechanical systems (MEMS)
- MEMS and electron devices integration, Advanced sensor materials
- Final exam
Literature
(.), James D. Plummer, Michael Deal, Peter B. Griffin (2000.), Silicon VLSI Technology: Fundamentals, Practice, and Modeling, Prentice Hall,
(.), Stanley Wolf, Richard N. Tauber (2000.), Silicon Processing for the VLSI Era, Vol. 1: Process Technology, Lattice Press,
(.), P. Biljanović (2001.), Mikroelektronika Integrirani elektronički sklopovi, Školska knjiga,,
For students
General
ID 222696
Winter semester
5 ECTS
L1 English Level
L1 e-Learning
45 Lectures
0 Seminar
15 Exercises
4 Laboratory exercises
0 Project laboratory
0 Physical education excercises
Grading System
87 Excellent
75 Very Good
62 Good
50 Sufficient