doc. dr. sc. Mirko Poljak

Docent, Zavod za elektroniku, mikroelektroniku, računalne i inteligentne sustave

  Izvorni znanstveni i pregledni radovi u CC časopisima
 
Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials. // Solid-state electronics. 115 (2016) , 1; 109-119 (članak, znanstveni).
Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects. // IEEE transactions on electron devices. 63 (2016) , 2; 537-543 (članak, znanstveni).
Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects. // Nano Research. 9 (2016) , 6; 1723-1734 (članak, znanstveni).
Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons. // Solid-state electronics. 108 (2015) ; 67-74 (članak, znanstveni).
Influence of substrate type and quality on carrier mobility in graphene nanoribbons. // Journal of applied physics. 114 (2013) , 5; 053701-1-053701-8 (članak, znanstveni).
Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons. // Solid-state electronics. 84 (2013) , 6; 103-111 (članak, znanstveni).
Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling. // IEEE transactions on electron devices. 59 (2012) , 6; 1636-1643 (članak, znanstveni).
Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons. // IEEE transactions on electron devices. 59 (2012) , 12; 3231-3238 (članak, znanstveni).
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications. // Solid-state electronics. 65/66 (2011) ; 130-138 (članak, znanstveni).
Ultra-high aspect-ratio FinFET technology. // Solid-state electronics. 54 (2010) , 9; 870-876 (članak, znanstveni).
Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs. // Microelectronic Engineering. 87 (2010) , 2; 192-199 (članak, znanstveni).
Improving bulk FinFET DC performance in comparison to SOI FinFET. // Microelectronic engineering. 86 (2009) , 10; 2078-2085 (članak, znanstveni).
 
  Znanstveni radovi u zbornicima skupova s međunar.rec.
 
Strain-induced increase of electron mobility in ultra-thin InGaAs-OI MOS transistors // Proceedings of the 3rd Joint EUROSOI-ULIS Conference 2017.
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices // Proceedings of the 38th International Convention MIPRO 2015 / Biljanović, Petar (ur.).
On the enhancement of electron mobility in ultra-thin (111)-oriented In0.53Ga0.47As channels // Proceedings of the First Joint EUROSOI-ULIS Conference 2015 / Palestri, Pierpaolo ; Gnani, Elena (ur.).
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Sensitivity of carrier mobility to edge defects in ultra-narrow graphene nanoribbons // Proceedings of the International Conference on Ultimate Integration on Silicon (ULIS) 2014 / Mikael Ostling ; Per-Erik Hellstrom ; Gunnar Malm (ur.).
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs // Proceedings of the 37th International Convention MIPRO / Biljanović, Petar (ur.).
Effects of Disorder on Transport Properties of Extremely Scaled Graphene Nanoribbons // Proceedings of the 42nd European Solid-State Device Research Conference (ESSDERC) / Deval, Yann ; Zimmer, Thomas ; Skotnicki, Thomas (ur.).
Physics-Based Modeling of Hole Mobility in Ultrathin-Body Silicon-On-Insulator MOSFETs // Proceedings of the 34th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Investigation of Hole Mobility in Ultrathin-Body SOI MOSFETs on (110) Surface: Effects of Silicon Thickness and Body Doping // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Features of Electron Mobility in Ultrathin-Body InGaAs-On-Insulator MOSFETs down to Body Thickness of 2 nm // Proceedings of the 2011 IEEE International SOI Conference / W. Xiong (ur.).
Orientation-Dependent Electron Mobility Behavior with Downscaling of Fin-Width in Double- and Triple-Gate SOI FinFETs // Proceedings of the 11th International Conference on Ultimate Integration on Silicon / S. Roy (ur.).
Quantum-Mechanical Modeling of Phonon-Limited Electron Mobility in Bulk MOSFETs, Ultrathin-Body SOI MOSFETs and Double-Gate MOSFETs for Different Orientations // Proceedings of the 33rd International Convention MIPRO - Vol I. MEET and GVS / Biljanović, Petar ; Skala, Karolj (ur.).
Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications // Proceedings of the 40th European Solid-State Device Research Conference / Gamiz, Francisco ; Godoy, Andres (ur.).
Physical mechanisms of electron mobility behavior in ultra-thin body double-gate MOSFETs with (100) and (111) active surfaces // Proceedings of the 46th International Conference on Microelectronics, Devices and Materials (MIDEM) / Đonlagić, D. ; Šorli, I. ; Šorli, P. (ur.).
Bulk-Si FinFET Technology for Ultra-High Aspect-Ratio Devices // Proceedings of the 39th European Solid-State Device Research Conference / Tsoukalas, D. ; Dimoulas, A. (ur.).
FinFET Considerations for 0.18 um Technology // Proceedings of 45th International Conference on Microelectronics, Devices and Materials MIDEM 2009 / Topič M. ; Krč, J. ; Šorli, I. (ur.).
1.9 nm Wide Ultra-High Aspect-Ratio Bulk-Si FinFETs // Device Research Conference - Conference Digest / Koester, S. ; Gundlach, D. ; Fay, P. (ur.).
Quantum Confinement and Scaling Effects in Ultra-Thin Body Double-Gate FinFETs // Proceedings of 32nd International Convention MIPRO 2009 / Biljanović, Petar ; Skala, Karolj (ur.).
Suppression of Corner Effects in Triple-Gate Bulk FinFETs // Proceedings of the International IEEE Conference EUROCON 2009 / Mironenko, I. ; Mikerov, A. (ur.).
Optimum Body Thickness of (111)-oriented Ultra-Thin Body Double-Gate MOSFETs with Respect to Quantum-Calculated Phonon-Limited Mobility // Proceedings of the International Semiconductor Device Research Symposium 2009 / Jones, Ken ; Dilli, Zeynep (ur.).
SOI vs. Bulk FinFET: Body Doping and Corner Effects Influence on Device Characteristics // Proceedings of the 14th IEEE Mediterranean Electrotechnical Conference (MELECON) / G. A. Capolino, J. F. Santucci (ur.).
Properties of Bulk FinFET with High-κ Gate Dielectric and Metal Gate Electrode // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. (ur.).
Influence of Scaling and Source/Drain Series Resistance on the Characteristics of Ultra-Thin Body FinFETs // Proceedings of the 31st International Convention MIPRO / Biljanović, P. ; Skala, K. (ur.).
Comparison of 1D and 2D model of quantum effects in the simulation of sub-50 nm double-gate MOSFETs // Proceedings of the 30th International Convention MIPRO 2007 / P. Biljanović, K. Skala (ur.).
Technological constrains of bulk FinFET structure in comparison with SOI FinFET // Proceedings of International Semiconductor Device Research Symposium / Jones, K. (ur.).
 
  Neobjavljena sudjelovanja na skupovima
 
Electron Transport in Thin-Body InGaAs-OI MOSFETs: A Theoretical Viewpoint // 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Workshop on Carrier Transport in Nano-Transistors / Tsuchiya, H. ; Kamakura, Y. (ur.).
FinFET: Optimization and Analysis of Specific Effects // European School on Nanosciences and Nanotechnologies (ESONN), August-September 2009, Grenoble, France.
 
  Disertacije
 
Carrier transport in low-dimensional nanoelectronic devices / doktorska disertacija.
 
  Diplomski radovi
 
Utjecaj kvantnih efekata na karakteristike ekstremno skaliranih MOS tranzistora / diplomski rad.
 
  Druge vrste radova
 
PureB layers – XRD measurements and temperature characteristics, 2014. (ekspertiza).
Large Area Reverse Structure Avalanche Photodiode Simulations, 2014. (ekspertiza).
Design of a scalable model of GaN devices, 2014. (ekspertiza).
Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje, 2013. (popularan rad).
MORGANA - Semi-classical carrier mobility simulator for graphene nanoribbons on different substrates, 2013. (računalni programski paket).
Spectroscopic elipsometry and Internal photoemission characterization of of PureB layers, 2013. (ekspertiza).
XPS Data interpretation of PureB layers, 2013. (ekspertiza).
TOMEK - Atomistic quantum transport (NEGF) simulator for studies of transport properties of graphene nanoribbons, 2012. (računalni programski paket).
Optimization of diode capacitance of Annular BS detector, 2012. (ekspertiza).
INGA - Simulator of electron mobility for single and double-gate ultra-thin body InGaAs-on-insulator transistors, 2011. (računalni programski paket).
Analiza i optimiranje naprednih tranzistora s efektom polja – pregled područja i dosadašnjih rezultata, 2010. (kvalifikacijski doktorski ispit).
MOSOR - Orientation-dependent carrier mobility simulator for single and double-gate ultra-thin body silicon devices, 2009. (računalni programski paket).
Emitter Coupled Logic (ECL) Circuit Design in a Novel Horizontal Current Bipolar Transistor (HCBT) Technology, 2009. (ekspertiza).
Rješenje problema periodičkog potencijala u obliku Diracovog češlja prijenosnom matricom, 2008. (seminarski rad (rukopis)).
Novel Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process –Polysilicon Re-crystallization Problem, Process Uniformity and Device Simulation, 2008. (ekspertiza).
Horizontal Current Bipolar Transistor (HCBT) in AKM's 0, 18μm BiCMOS Process: 4th Lot Device Simulation, 2007. (ekspertiza).
 
  Vođenje disertacija, magistarskih i diplomskih radova
 
Modeliranje transporta elektrona u galij-nitridnim tranzistorima s efektom polja / završni rad - diplomski/integralni studij.
Analiza visoko-frekvencijskih karakteristika FinFET struktura za komunikacijske sklopove / završni rad - diplomski/integralni studij.
Karakteristike FinFET struktura s ultra tankim tijelom pod utjecajem naprezanja / diplomski rad.
Analiza MOS tranzistora realiziranih u germaniju / završni rad - preddiplomski studij.
Utjecaj naprezanja na karakteristike skaliranih CMOS tranzistora / diplomski rad.
Karakterizacija FinFET strukture sa ultra tankim tijelom / završni rad - preddiplomski studij.
Analiza MOSFET-a s dvostrukom upravljačkom elektrodom u FinFET tehnologiji / diplomski rad.
Mjerenja i simulacije tranzistora snage sa produženim drift područjem u standardnoj CMOS tehnologiji / diplomski rad.
Analiza tranzistora snage sa dodatnim mehanizmima osiromašenja u standardnoj CMOS tehnologiji / diplomski rad.
 

Odabrane publikacije u CC časopisima:

  • M. Poljak et al., "Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects", Nano Research, vol. 9, no. 6, pp. 1723-1734, 2016. LINK
  • M. Poljak et al., "Influence of substrate type and quality on carrier mobility in graphene nanoribbons", Journal of Applied Physics, vol. 114, no. 5, p. 053701, 2013.
  • M. Poljak et al., "Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons", IEEE Trans. on Electron Devices, vol. 59, no. 12, pp. 3231-3238, 2012.
  • M. Poljak et al., "Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling", IEEE Trans. on Electron Devices, vol. 59, no. 6, pp. 1636-1643, 2012.

Životopis

Dr. sc. Mirko Poljak je docent na Fakultetu elektrotehnike i računarstva Sveučilišta u Zagrebu. Na ovoj instituciji je doktorirao u svibnju 2013. u području nanoelektronike pod mentorstvom prof. dr. sc. T. Suligoja (FER) i prof. dr. sc. K. L. Wanga (UCLA).

U ljeto 2009. se usavršavao na European School on Nanosciences and Nanotechnologies u Grenobleu (Francuska). Cijelu akad. god. 2011./2012. bio je gostujući istraživač - Fulbright Fellow - u grupi Device Research Lab, Dept. of Electrical Engineering, University of California Los Angeles (SAD). U prosincu 2014. i lipnju 2015. je bio na dva jednotjedna usavršavanja u Atomistic Simulation Centre, Queen's University Belfast, Belfast (UK).

Znanstveni rad dr. Poljaka fokusiran je na razvoj modela i numeričkih simulatora za projektiranje, analizu i optimizaciju elektroničkih elemenata na nanoskali. Za vrijeme doktorskog studija, bio je fokusiran na transport nosilaca u niskodimenzionalnim nanoelektroničkim elementima poput UTB SOI, FinFET i UTB InGaAs-OI struktura. Za vrijeme boravka na UCLA-u, istraživao je transportna i elektronska svojstva grafena i grafenskih nanovrpci, eksperimentalno i teorijski. Trenutni interesi pokrivaju razvoj atomističkog kvantnotransportnog simulatora za analizu novih 2D materijala poput fosforena za digitalnu, analognu i senzorsku elektroniku na nanoskali. Dr. Poljak je autor 12 radova u međunarodnim časopisima s nadprosječnim faktorom utjecaja (uključujući rad u časopisu Nano Research s faktorom utjecaja od 8,9) te preko 25 znanstvenih radova na međunarodnim konferencijama. Radovi su mu citirani preko 230 puta prema Google Scholaru. Google Scholar profil s podacima o citiranosti dostupan je ovdje, podaci iz baze Scopus ovdje, a podaci iz baze Web of Science ovdje.

Recenzent je časopisa IEEE Transactions on Electron Devices, Applied Physics Letters, Journal of Applied Physics, Solid-State Electronics, itd. Član je IEEE, IEEE Electron Devices Society i Hrvatske udruge MIPRO. Dr. Poljak je dobitnik Godišnje nagrade sveučilišnih nastavnika i znanstvenika u Zagrebu (2017.), Nagrade za znanost FER-a za svjetski priznati istraživački rezultat (2016.), Nagrade Vera Johanides za mlade znanstvenike Akademije tehničkih znanosti Hrvatske (2014.), Srebrne plakete "Josip Lončar" za naročito uspješnu doktorsku disertaciju (2013.), Nagrade za znanost FER-a za iznimno postignuće u istraživačkom radu (2013.) te prestižne Fulbrightove stipendije Vlade SAD-a (2011.).

Nastava

Sveučilišni preddiplomski

Profesionalni interesi i članstva

Istraživački interesi:

  • napredni nanoelektronički elementi za digitalnu i analognu/RF elektroniku, te kemijske i bio-senzore na nanoskali
  • numeričko modeliranje i simulacije - od atomističke skale (kvantni transport) do modela elemenata za sklopovske simulacije (Verilog)
  • novi materijali (grafen, silicen, germanen, fosforen) i nove paradigme za elektroniku budućnosti (spintronika i molekularna elektronika)

Članstva u znanstvenim i strukovnim društvima:

  • IEEE Electron Devices Society
  • Hrvatska udruga MIPRO

Osobni podaci

Godina diplomiranja:
2007.
Godina doktoriranja:
2013.
Na zavodu od:
2007.

Izabrani projekti

  • High-Performance Semiconductor Devices for Wireless Circuit and Optical Detection Applications - HIPERSEMI (2014-2018, sponzor: HRZZ; voditelj: prof. dr. sc. T. Suligoj)
  • Nanometarski elektronički elementi i sklopovske primjene (2007-2013, sponzor: MZOŠ RH; voditelj: prof. dr. sc. T. Suligoj)
  • Horizontal current bipolar transistor (HCBT) for 0.18 μm BiCMOS integration (2008-2009, sponzor: Asahi Kasei Microdevices Co., Ltd., Japan; voditelj: prof. dr. sc. T. Suligoj)
  • Atomistic simulations of graphene nanoribbons: Bandstructure and quantum transport (2011-2012, sponzor: FENA; voditelj: prof. dr. sc. K. L. Wang)

Povijest zaposlenja

Od lipnja 2017. - docent na Zavodu za elektroniku, mikroelektroniku, računalne i inteligentne sustave (ZEMRIS).

Od srpnja 2013. do lipnja 2017. - poslijedoktorand/viši asistent na Zavodu za elektroniku, mikroelektroniku, računalne i inteligentne sustave (ZEMRIS).

Od rujna 2011. do lipnja 2012. - gostujući istraživač (Fulbright Fellow) na University of California Los Angeles (UCLA), Dept. of Electrical Engineering.

Od srpnja 2007. do lipnja 2013. - znanstveni novak/asistent na Zavodu za elektroniku, mikroelektroniku, računalne i inteligentne sustave (ZEMRIS).