Publications on HRZZ project CONAN2D

  1. Poljak, Mirko; Matić, Mislav. Bandstructure Effects in Phosphorene Nanoribbon MOSFETs from NEGF Simulations Using a New DFT-based Tight-binding Hamiltonian Model.  // Proceedings of 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 1-4, 2021.

  2. Poljak, Mirko; Matić, Mislav. DFT-Based Tight-Binding Model for Atomistic Simulations of Phosphorene Nanoribbons.  // Proceedings of the 44th Intl. Convention MIPRO 2021 - MEET (Microelectronics, Electronics and Electronic Technology), pp. 88-92, 2021.

  3. Matić, Mislav; Leljak, Mihael; Poljak, Mirko. Estimating OFF-state Leakage in Silicene Nanoribbon MOSFETs from Complex Bandstructure.  // Proceedings of the 44th Intl. Convention MIPRO 2021 - MEET (Microelectronics, Electronics and Electronic Technology), pp. 93-97, 2021.

  4. Zeljko, Ante; Prevarić, Ivan; Poljak, Mirko. Simulation Analysis of XOR Gates Implemented with a Memristor-Based Neural Network.  // Proceedings of the 44th Intl. Convention MIPRO 2021 - MEET (Microelectronics, Electronics and Electronic Technology), pp. 136-141, 2021.

  5. Poljak, Mirko; Matić, Mislav; Zeljko, Ante.Minimum Contact Resistance in Monoelemental 2D Material Nanodevices with Edge-Contacts // IEEE Electron Device Letters, 42 (2021), 8; 1240-1243 doi:10.1109/LED.2021.3087908

  6. Poljak, Mirko; Matić, Mislav. Metallization-Induced Quantum Limits of Contact Resistance in Graphene Nanoribbons with One-Dimensional Contacts // Materials, 14 (2021), 13; 3670 doi:10.3390/ma14133670

  7. Poljak, Mirko; Matić, Mislav. Extraction of contact resistance from Green's function simulations of 2D material nanoribbon devices // Book of Abstracts - 2021 International Workshop on Computational Nanotechnology (IWCN), pp. 123-124, 2021.

  8. Poljak, Mirko. Impact of Width Scaling and Parasitic Series Resistance on the Performance of Silicene Nanoribbon MOSFETs // IEEE Transactions on Electron Devices, 67 (2020), 11, 4705-4708 doi:10.1109/TED.2020.3017465 (link)

  9. Poljak, Mirko; Matić, Mislav. Quantum Transport Simulations of Phosphorene Nanoribbon MOSFETs: Effects of Metal Contacts, Ballisticity and Series Resistance // Proceedings of the 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 371-374, 2020.

  10. Poljak, Mirko. Material and device properties of bismuthene nanoribbons from multi-orbital quantum transport simulations // Proceedings of Intl. Conv. MIPRO-MEET (Microelectronics, Electronics and Electronic Technology), pp. 41-45, 2020. (link)

  11. Župančić, Tin; Stresec, Ivan; Poljak, Mirko. Predicting the transport properties of silicene nanoribbons using a neural network // Proceedings of Intl. Conv. MIPRO-MEET (Microelectronics, Electronics and Electronic Technology), pp. 51-55, 2020. (link)

  12. Mihaljević, Mirko; Širić, Marko; Poljak, Mirko. Single-band quantum transport study of resonant tunneling diodes based on silicene nanoribbons // Proceedings of Intl. Conv. MIPRO-MEET (Microelectronics, Electronics and Electronic Technology), pp. 46-50, 2020.

  13. Poljak, Mirko; Length-Dependent Electron Transport Properties of Defective Silicene Nanoribbons // IEEE Transactions on Nanotechnology, 19 (2020), 315-321 doi:10.1109/TNANO.2020.2982071 (link)

 

Other journal papers

  1. Berdalovic, Ivan; Poljak, Mirko; Suligoj, Tomislav. A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors. // Journal of Applied Physics 129 (2021), 6; 064303

  2. Poljak, Mirko; Electron Mobility in Defective Nanoribbons of Monoelemental 2D Materials.  // IEEE Electron Device Letters, 41 (2020), 1;  151-154 doi:10.1109/LED.2019.2952661 (link)

  3. Poljak, Mirko; Intrinsic Capabilities for Digital Switching of Silicene Nanoribbons with Edge Defects.  // IEEE Transactions on Electron Devices, 67 (2020), 1;  354-359 doi:10.1109/TED.2019.2950967

  4. Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav; The Physical Mechanisms Behind the Strain-Induced Electron Mobility Increase in InGaAs-On-InP MOSFETs.  // IEEE Transactions on Electron Devices, 65 (2018), 7;  2784-2789 doi:10.1109/TED.2018.2838681

  5. Poljak, Mirko; Suligoj, Tomislav; The Potential of Phosphorene Nanoribbons as Channel Material for Ultra-Scaled Transistors.  // IEEE Transactions on Electron Devices, 65 (2018), 1;  290-294 doi:10.1109/TED.2017.2771345

  6. Poljak, Mirko; Suligoj, Tomislav; Immunity of electronic and transport properties of phosphorene nanoribbons to edge defects.  // Nano Research, 9 (2016), 6;  1723-1734 doi:10.1007/s12274-016-1066-1 (link)

  7. Poljak, Mirko; Suligoj, Tomislav; Quantum transport analysis of conductance variability in graphene nanoribbons with edge defects.  // IEEE Transactions on Electron Devices, 63 (2016), 2;  537-543 doi:10.1109/TED.2015.2505003

  8. Krivec, Sabina; Poljak, Mirko; Suligoj, Tomislav; Electron mobility in ultra-thin InGaAs channels : Impact of surface orientation and different gate oxide materials.  // Solid-State Electronics, 115 (2016), 1;  109-119 doi:10.1016/j.sse.2015.08.009

  9. Poljak, Mirko; Wang, Kang L.; Suligoj, Tomislav; Variability of bandgap and carrier mobility caused by edge defects in ultra-narrow graphene nanoribbons.  // Solid-State Electronics, 108 (2015),  67-74 doi:10.1016/j.sse.2014.12.012

  10. Poljak, Mirko; Suligoj, Tomislav; Wang, Kang L.; Influence of substrate type and quality on carrier mobility in graphene nanoribbons.  // Journal of Applied Physics, 114 (2013), 5;  053701-1 doi:10.1063/1.4817077

  11. Poljak, Mirko; Wang, Minsheng; Song, Emil B.; Suligoj, Tomislav; Wang, Kang L.; Disorder-induced variability of transport properties of sub-5 nm-wide graphene nanoribbons.  // Solid-State Electronics, 84 (2013), 6;  103-111 doi:10.1016/j.sse.2013.02.014

  12. Poljak, Mirko; Song, Emil B.; Wang, Minsheng; Suligoj, Tomislav; Wang, Kang L.; Influence of edge defects, vacancies and potential fluctuations on transport properties of extremely-scaled graphene nanoribbons.  // IEEE Transactions on Electron Devices, 59 (2012), 12;  3231-3238 doi:10.1109/TED.2012.2217969

  13. Poljak, Mirko; Jovanović, Vladimir; Grgec, Dalibor; Suligoj, Tomislav; Assessment of electron mobility in ultra-thin body InGaAs-on-insulator MOSFETs using physics-based modeling.  // IEEE Transactions on Electron Devices, 59 (2012), 6;  1636-1643 doi:10.1109/TED.2012.2189217

  14. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav; Modeling study on carrier mobility in ultra-thin body FinFETs with circuit-level implications.  // Solid-State Electronics, 65/66 (2011),  130-138 doi:10.1016/j.sse.2011.06.039

  15. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav; Suppression of Corner Effects in Wide-Channel Triple-Gate Bulk FinFETs.  // Microelectronic Engineering, 87 (2010), 2;  192-199 doi:10.1016/j.mee.2009.07.013

  16. Jovanović, Vladimir; Suligoj, Tomislav; Poljak, Mirko; Civale, Yann; Nanver, Lis K.; Ultra-high aspect-ratio FinFET technology.  // Solid-State Electronics, 54 (2010), 9;  870-876 doi:10.1016/j.sse.2010.04.021

  17. Poljak, Mirko; Jovanović, Vladimir; Suligoj, Tomislav; Improving bulk FinFET DC performance in comparison to SOI FinFET.  // Microelectronic Engineering, 86 (2009), 10;  2078-2085 doi:10.1016/j.mee.2009.01.066