| Project |
| Acronym: |
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| Name: |
Feasibility study for boron layer integration in silicon avalanche photodiode
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| Project status: |
From: 2012-07-01
To: 2012-12-31
(Completed)
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| Type (Programme): |
BILAT |
| Project funding: |
- |
| International partner |
| Organisation Name: |
Laser Components DG, Inc. |
| Organisation adress: |
7755 S. Research Drive, Suite 123 Tempe, AZ 85284 |
| Organisation country: |
USA |
| Contact person name: |
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| Contact person email: |
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| Croatian partner |
| Contact person names: |
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| Contact organisation unit: |
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| Contact person tel: |
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| Croatian partner |
| Organisation name: |
Fakultet elektrotehnike i računarstva |
| Organisation address: |
Zavod za elektroniku, mikroelektroniku, računalne i inteligentne sustave, Unska 3, 10000 Zagreb |
| Contact person name: |
Prof. dr. sc. Tomislav Suligoj
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| Contact person tel: |
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| Contact person e-mail: |
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| Short description of project |
| Besides high sensitivity, photodetectors with pure boron layer have technological properties suitable for the integration with standard silicon fabrication sequence, such as, conformal deposition, selective etching of oxide and metal layers, layer uniformity etc. The integration of pure boron layer with avalanche photodiodes has been studied by numerical simulations and theoretical analyses.
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| Short description of the task performed by Croatian partner |
| The examination of the integration of pure boron layer with avalanche photodiodes by numerical simulations and theoretical analyses.
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