Impact of AlGaN and InAlN Barrier Layer Materials on Double-Heterostructure GaN HEMT's Conduction Properties

Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers

Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS

Ultra-Low Dark Count Rate SPAD Fully Integrated in a 180 nm High-Voltage CMOS Process

Impact of Buffer Al-Content on 2DEG Mobility and Scattering Mechanisms in Double-Heterostructure GaN HEMTs

Ultra-low dark count rate SPAD fully integrated in a 180 nm high-voltage CMOS process

Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS

Mobility Limitations in Single- and Double-Heterostructure GaN HEMTs

Theoretical Prediction of Mobility Improvement in GaN-Based HEMTs at High Carrier Densities

Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance

Radiation hardness and timing performance in MALTA monolithic pixel sensors in TowerJazz 180 nm

Progress in DMAPS developments and first tests of the Monopix2 chips in 150 nm LFoundry and 180 nm TowerJazz technology

Development and characterization of a DMAPS chip in TowerJazz 180 nm technology for high radiation environments

A 1-<i>μ</i>W Radiation-Hard Front-End in a 0.18-<i>μ</i>m CMOS Process for the MALTA2 Monolithic Sensor

Layout-Dependent Noise Performance of Single- Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology

Latest developments and characterisation results of the MALTA sensors in TowerJazz 180nm for High Luminosity LHC

Radiation hard monolithic CMOS sensors with small electrodes for High Luminosity LHC

Studies for low mass, large area monolithic silicon pixel detector modules using the MALTA CMOS pixel chip

A comprehensive model and numerical analysis of electron mobility in GaN-based high electron mobility transistors

Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework

Latest Developments and Results of Radiation Tolerance CMOS Sensors with Small Collection Electrodes

Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions

Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies

Measurement of the relative response of small-electrode CMOS sensors at Diamond Light Source

Measurement results of the MALTA monolithic pixel detector

DMAPS Monopix developments in large and small electrode designs

Design of large scale sensors in 180 nm CMOS process modified for radiation tolerance

X-Ray measurements of radiation hard monolithic CMOS sensors at Diamond Light Source

On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

Mini-MALTA: radiation hard pixel designs for small-electrode monolithic CMOS sensors for the High Luminosity LHC

Radiation hard monolithic CMOS sensors with small electrode size for the ATLAS experiment in the HL-LHC

Recent measurements on MiniMALTA, a radiation hard CMOS sensor with small collection electrodes for ATLAS

Development of the monolithic “MALTA” CMOS sensor for the ATLAS ITK outer pixel layer

The Malta CMOS pixel detector prototype for the ATLAS Pixel ITK

MALTA: a CMOS pixel sensor with asynchronous readout for the ATLAS High-Luminosity upgrade

CMOS monolithic pixel sensors based on the column-drain architecture for the HL-LHC upgrade

MALTA: an asynchronous readout CMOS monolithic pixel detector for the ATLAS High-Luminosity upgrade

Update on the TowerJazz CMOS DMAPS development for the ATLAS ITk

The Monopix chips: Depleted monolithic active pixel sensors with a column-drain read-out architecture for the ATLAS Inner Tracker upgrade

Monolithic pixel development in TowerJazz 180 nm CMOS for the outer pixel layers in the ATLAS experiment

LAPA, a 5 Gbps modular pseudo-LVDS driver in 180 nm CMOS with capacitively coupled pre-emphasis

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

Monolithic Pixel Development in 180 nm CMOS for the Outer Pixel Layers in the ATLAS Experiment

Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes