Pristupačnost
A proposal for characterizing global light pollution using a LEO nanosatellite
Constant-resistance filters with diplexer architecture for S-band applications
Wavelength reuse WDM-PON using RSOA and modulation averaging
10-MSymbols/s QAM-16 externally-modulated optical link for radio-over-fiber applications
Link budget analysis for a proposed Cubesat Earth observation mission
Signal-to-noise ratio of arbitrarily filtered spontaneous emission
Optical-coupler based modulation-averaging structures for self-seeded colorless WDM-PON
Tunable transceivers for colorless spectrum-sliced WDM passive optical networks
Wavelength-reuse fiber-optic transmitters
Light sources with highly stable output intensity
Accurate estimate and measurement of continuous-wave noise in filtered incoherent light
Phase-stiff RF power amplifier for phased array transmit/receive modules
Class-D GaN 15MHz-bandwidth amplitude modulator with a direct CMOS interface
Ultra-stable LED sources
Reaching <100 ppm/K output intensity temperature stability with single-color light-emitting diodes
Temperature-stable LED-based light source without temperature control
Fiber-optic vibration sensor for high-power electric machines realized using 3D printing technology
Optical sources employing self-seeding and modulation averaging
Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer
Self-Seeded WDM-PON for Next Generation Broadband Access Networks
Modulation averaging reflectors
Fiber-optic vibration sensor for high-power electric machines
Temperature dependence of injection-locked Fabry- Pérot laser emission in WDM-PON architectures
RF and milimeter-wave high-power semiconductor device
Gallium--nitride-on-diamond wafers and devices, and methods of manufacture
GaN-on-Diamond: A Brief History
Diamond for enhanced GaN device performance
3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C
GaN-on-Diamond : The Next GaN
Temperature-stable incoherent light source
C and L band Self-seeded WDM-PON Links using Injection locked Fabry-Pérot Lasers and Modulation Averaging
Colorless optical sources for fiber-optic access networks of new generation
Optimal AlGaN/GaN HEMT Buffer Layer Thickness in the Presence of an Embedded Thermal Boundary
High-stability light source system and method of manufacturing
Integral-equation solution of modes in apertured laser resonators with distributed mirrors
175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures
Measurement of Thermal Boundary Resistance using Liquid Crystal Thermography
An ultra-stable VCSEL light source
Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje
Colorless Optical Network Architecture and Network Components
Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier - Series Expansion
Characterization of mirror-based modulation-averaging structures
Semiconductor devices having gallium nitride epilayers on diamond substrates
Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates
Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance
Interrogating FBG based temperature sensors — Practical issues
Extended Cavity Light Source Using Modulation-Averaging Reflectors for WDM-PON
47-km 1.25-Gbps transmission using a self-seeded transmitter with a modulation averaging reflector
Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof
Poluvodički Nanotehnološki Centar u Hrvatskoj
GaN-on-diamond Technology for Microwave/Millimeter-wave Applications
Advancements in GaN-on-Diamond HEMT and MMIC Fabrication
Development of III-Nitride HEMTs on CVD Diamond Substrates
Novel high temperature annealed schottky metal for GaN devices
Laser machining of GaN-on-diamond wafers
Modulation-Averaging Reflectors for Extended-Cavity Optical Sources
Nanotehnologija u Hrvatskoj – Šansa za male i zakašnjele
GaN-on-Diamond Field-Effect Transistors: from Wafers to Amplifier Modules
Comparative Study of AlGaN/GaN HEMTs on Free- Standing Diamond and Silicon Substrates for Thermal Effects
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates
Formation and characterization of 4-inch GaN-on-diamond substrates
Semiconductor devices having gallium nitride epilayers on diamond substrates
Croatian Semiconductor Industry Cluster
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
High-bandwidth CX4 optical connector
Materials Characterization Comparison of GaN HEMT- on-Diamond Layers Pre- and Post-Attachment
Diamond cools high-power transistors
Comparison of GaN HEMTs on Diamond and SiC Substrates
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress
Comparison of GaN HEMTs on Diamond and SiC Substrates
Multi-wavelength grating-outcoupled surface emitting laser system
AlGaN/GaN HEMT on Diamond Technology Demonstration
Practical measurement of timing jitter contributed by a clock-and-data recovery circuit
Embedded electromagnetic interference shield
Comparison of EDC-enabled link performance using measured waveforms from 2.5G and 10G lasers
Low-speed lasers, nonlinearities, and EDC
Flip-chip assembly for optically-pumped lasers
System for optically pumping a long wavelength laser using a short wavelength laser
Relationship between root-mean-square and peak-to- peak jitter measurements
Integrated coupling modules for high-bandwidth fiber-optic systems
System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
TFI-5 based on 16-lane parallel optics
Technical Specification for TFI-5 compliant optical components
TFI-5 Jitter Specification
Allowing IEC Class 1M Laser Safety certification for parallel optic PMD in 10GFC
Active cables for FC-PI-2
Surface emitting laser using two wafer bonded mirrors
Monolithic multiple wavelength VCSEL array
Long-Wavelength VCSEL using buried bragg reflectors
System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation
System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation
Buried layer in a semiconductor formed by bonding
Four-lane 850nm optical interface
Laser safety for parallel-optic products
Four-lane power budgeting models from Alvesta
Laser safety limits for single and four-lane short-wave optics
Comment on FC-PI-2 rev12 Annex F.4: Relative Intensity Noise RIN(OMA) measuring procedure
10 Gb/s very short reach (VSR) interconnect solutions
Interface of directly bonded GaAs and InP
4 x 2.5Gb/s multichannel optical transceiver
Analysis of polarization pinning in vertical- cavity surface-emitting lasers using etched trenches
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
The interior design of the new laser and New muxed laser arrays, sidebars in The ideal light source for datanets, by by K.S. Giboney, L.B. Aronson, B.E. Lemoff
Growth of 1.3-um InGaAsN laser material on GaAs by MBE
Methods for controlling the polarization in VCSELs
Near-ohmic p-InP/p-GaAs fused junctions
Monolithic integration of a vertical-cavity laser and a photo-detector for low bias-voltage operation
Fusion bonding for vertical-cavity surface- emitting lasers
Growth of 1.3 um InGaAsN laser material on GaAs by MBE
Continuously-Tunable, Photo-Pumped 1.3-m Fiber Fabry-Perot Surface-Emitting Lasers
Mode selectivity study of vertical-cavity surface-emitting lasers
A finite-difference time-domain electromagnetic field solver for vertical-cavity lasers
Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offset
64°C continuous-wave operation of 1.5-μm vertical-cavity laser
Continuously tunable photopumped 1.3-μm fiber Fabry-Perot surface-emitting lasers
Capacitance-voltage and SIMS characterization of GaAs/InP fused junctions for 1300 nm vertical-cavity laser application
Structural and electrical characterization of the GaAs/InP wafer-fused interface
Wafer Fusion for Surface-Normal Optoelectronic Device Applications
Wafer fusion : materials issues and device results
Scattering losses from dielectric apertures in vertical-cavity lasers
Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers
Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching
Design and analysis of double-fused 1.55-μm vertical-cavity lasers
Isotype heterojunctions with flat valence or conduction band
Progress in long-wavelength vertical-cavity lasers
Room-temperature performance of double-fused 1.54 um vertical-cavity lasers
Long-wavelength vertical-cavity lasers with GaAs mirrors
Scattering parameters for lossless multisection quarter-wave transformers
Current VCSEL research in HP Laboratories
Loss analysis of 1.55 um vertical-cavity lasers
Submilliamp long-wavelength vertical-cavity lasers
Multimore Fibre Transmission Using Room- Temperature Double-Fused 1.54 um Vertical- Cavity Lasers
Loss limitations in dielectrically apertured vertical-cavity lasers
Cleaved facets in GaN by wafer fusion of GaN to InP
Laterally oxidized long wavelength CW vertical- cavity lasers
1 Gbit/s, single-mode operation of vertical-cavity lasers emitting at 1.54 um
Modeling and optimization of 1.54 m double-fused VCSELs for cw operation above room temperature
Long-wavelength vertical-cavity surface-emitting laser diodes
Multimode fiber transmission using room temperature double-fused 1.54 μm vertical-cavity lasers
Laterally oxidized long wavelength cw vertical‐cavity lasers
Numerical analysis of 1.54 μm double‐fused vertical‐cavity lasers operating continuous‐wave up to 35 °C
1-Gbit/s, single-mode operation of vertical cavity lasers emitting at 1.54 um
Cleaved GaN facets by wafer fusion of GaN to InP
Silicon heterointerface photodetector
Estimation of scattering losses in dielectrically apertured vertical cavity lasers
Characterisation of metal mirrors on GaAs
Submilliamp long wavelength vertical cavity lasers
Double fused long-wavelength vertical cavity lasers
Long-wavelength vertical-cavity lasers
Wafer fusion for optoelectronic applications
Long wavelength vertical cavity surface emitting lasers
Silicon hetero-interface photodetector
Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers
Transverse-mode and polarization characteristics of double-fused 1.52 µm vertical-cavity lasers
Transverse-mode and polarisation characteristics of double-fused 1.52 um vertical-cavity lasers
Spontaneous emission in microcavities with distributed mirrors
Double‐fused 1.52‐μm vertical‐cavity lasers
Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers
Long-wavelength vertical-cavity lasers
Long-wavelength vertical-cavity lasers
Long wavelength surface emitting lasers on GaAs substrates
Double-fused 1.52-µm vertical cavity lasers
Spontaneous Emission in Microcavities with Distributed Mirrors
Limitations to Controlling Spontaneous Emission in Microcavities with Distributed Mirrors
Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon
Wafer bonding of InP and GaAs: Interface characterization and device applications
Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces
Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Optically pumped all-epitaxial wafer-fused 1.52-µm vertical cavity lasers
Wafer fused, Low Threshold, Long Wavelength Vertical Cavity Lasers on GaAs substrates
High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors
Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers
Low threshold, wafer fused long wavelength vertical cavity lasers
Scaling laws for gain‐guided vertical cavity lasers with distributed Bragg reflectors
InGaAsP Vertical Cavity Lasers
Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Conditions for Continuous Wave Operation of 1.3 µm InGaAsP Vertical Cavity Lasers
Transverse modes in cavities with distributed Bragg reflectors
Classical analysis of microcavity lasers
Modal Reflectivity of Quarter-Wave Mirrors in Vertical Cavity Lasers
Wafer fused long wavelength vertical cavity lasers
Vertical Cavity Laser High Speed Dynamics and Modeling
Reactive ion etcher self‐bias voltage regulator
Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates
Effect of layer thickness variations on propagation delay and penetration depth of a quarter-wave distributed Bragg reflector
Thermal resistance of 1.3μm InGaAsP vertical cavity lasers
Modal reflection of quarter-wave mirrors in vertical-cavity lasers
In-Situ Monitoring of Etching and Deposition Processes for Optoelectronic Device Fabrication
High Temperature Long Wavelength Vertical Cavity Lasers
Thermal design for CW of 1.3µm GaInAsP surface- emitting lasers
InGaAsP (1.3um) vertical-cavity lasers using GaAs/AlAs mirrors
Reactive Sputtering of Si/SiNx Quarter-wave Dielectric Mirrors using in-situ Laser Reflectometry
In situ characterization of sputtered thin film optical coatings using a normal incidence laser reflectometer
144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates
Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves
Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers
Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications
Analytic Expressions for the Reflection Delay, Penetration Depth and Absorptance of Quarter- Wave Dielectric Mirrors
Refractive Index of AlGaInAs on InP for Optoelectronic Applications
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control
High-temperature pulsed operation of InGaAsP/InP surface emitting lasers
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling
The role of non-uniform dielectric permittivity in the determination of heterojunction band offsets by cv-profiling through isotype heterojunctions
Characterization of Isotype Heterojunctions by Capacitance-Voltage Carrier Concentration Profiling
Features of Lateral Profiled Elements in Bipolar Integrated Technology
Monolithic multiple wavelength VCSEL array
Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
Wavelength tuning of Fabry-Perot lasers in spectrum-sliced optical links
Buried layer in a semiconductor formed by bonding
High Intensity Single-Mode VCSELs
Biography
Dubravko Babić was born in Zagreb, Croatia. He received his Dipl. Ing. Degree from University of Zagreb, Faculty of Electrical Engineering and Computing, in 1982, and his M. Sc. and Ph. D. in Electrical and Computer Engineering at University of California, Santa Barbara in 1984 and 1995, respectively.
Between 1982 and 1985 he worked as a graduate student on the measurement of AlGaAs/GaAs heterojunction band-offsets by capacitance-voltage profiling with prof. Herbert Kroemer at UC Santa Barbara. From 1985 to 1989 he worked at Avantek, Inc. (Santa Clara, California) as a Design Engineer, on the development of microwave switching and limiter diodes (10 GHz and 40 GHz), and hyperabrupt varactors for 3 GHz voltage-controlled oscillators.
In 1989, he joined the Ultrafast Optoelectronics Group at UC Santa Barbara, as a graduate student to work with professors John E. Bowers and Evelyn L. Hu on the development of vertical-cavity surface-emitting lasers (VCSELs) where in 1995 he demonstrated the world’s first room-temperature continuous-wave operating long-wavelength (1550 nm) VCSEL. From 1995 to 1999, he was a Member of Technical Staff at Hewlett-Packard Laboratories (Palo Alto, California) working on long-wavelength VCSEL development using wafer bonding technology.
In 1999, he founded Alvésta Corporation, manufacturer of 10Gb/s multichannel fiber-optic modules, where he served as the company's first Chief Executive Officer and then in 2001 as Chief Technical Officer. He managed the company through first product sale and raised $20M in venture capital for its funding (Alvesta was acquired by Emcore Corporation in 2002). Between 2003 and 2008, he assisted Clariphy Communications, Inc, (Irvine, California) developing optical equalization technology, as a member of the company's technical advisory board (Clariphy was acquired by InPhy in 2017), and XLoom Communications, Ltd (Israel) as Vice President US operations managing the development of 20Gbps multichannel optical modules in Tel Aviv, Israel (XLoom was acquired by Mellanox in 2014).
Between 2008 and 2013 he managed the development of RF and millimeter-wave amplifier modules based on GaN-on-diamond technology as Vice President RF Electronics and co-founder of Group4 Labs, Inc. (Fremont, California), where he developed laser machining of GaN-on-diamond wafers, built and operated transistor reliability testing, and in 2009 his team demonstrated the world’s first GaN-on-Diamond X-band power amplifier module (Group4 Labs was acquired by Element Six, Ltd in 2013).
After Group4 Labs he co-founded and served as Vice President RF Devices in Eridan Communications, Inc. (Santa Clara, California), a start-up company developing polar modulators based on GaN-technology for wireless communications. In 2012 he joined the faculty of University of Zagreb, Croatia, and in 2017 was elected to Associate Professor.
Since 2003, Prof. Babić has also served as an expert witness in multiple intellectual property litigation cases (in the USA 2003-2012 and in Croatia 2017) and assisted a number of start-up companies with patent writing and intellectual property issues.
Dr. Babić’s research interests include high-speed communications-component technology (semiconductor lasers and detectors, microwave amplifiers and other semiconductor devices) and optics. In recent years, he has been involved with space technology and building sensing and communications equipment for a CubeSat. He has over 140 publications presented at conferences and in peer-reviewed journals, thirty-five US granted patents, and one book chapter. His Web of Science h-index is 27 and Google Scholar h-index is 32.
Recently, a research group at Stanford University in California (USA) published a study about scientific citation that ranks about 160 000 scientists globally in different fields (https://doi.org/10.1371/journal.pbio.3000918). The study published a list of most influential scientists based on their entire careers in specific fields. Associate professor dr. sc. Dubravko Babić was listed in the top 2% of scientists globally in the field "Optoelectronics and Photonics".
Teaching duties
University undergraduate
- Introduction to space technologies (Lecturer in charge)
- Optoelectronics (Lecturer in charge)
- BSc Thesis (Lectures)
- BSc Thesis (Lectures)
- Project (Lectures)
- Project (Lectures)
- Project E (Lectures)
- Software Design Project (Lectures)
University graduate
- Design of Radio-frequency and Microwave Integrated Circuits (Lecturer in charge)
- Optical Networks (Lecturer in charge)
- Radio-Frequency Electronics (Lecturer in charge)
- Graduation Thesis (Lectures)
- Graduation Thesis (Lectures)
- Graduation Thesis (Lectures)
- Project (Lectures)
- Project (Lectures)
- Project (Lectures)
Postgraduate doctoral study programme
- Quantum fundamentals of optical and electronic devices (Lecturer in charge)
- Radiofrequency System Design (Lecturer in charge)
Postgraduate spec. study
- Innovation management (Lecturer in charge)
Personal data
List of select projects
CROSPERITY Satellite-based measurement of electromagnetic radiation, Croatian Science Foundation, project number IP-01-2018-2504.
Past employments
University of California, Santa Barbara 1983-1985 Research Assistant
Avantek, Inc., Santa Clara, California 1985-1989 Design Engineer
University of California, Santa Barbara 1989-1995 Research Assistant
Hewlett-Packard, Palo Alto, California 1995-1999 Member of Technical Staff
Alvesta Corporation, Sunnyvale, California 1999-2002 Chief Executive Office / Chief Technical Officer
Etanvie Technologies, Santa Clara, California 2003-2008 Chief Technologist
Group4 Labs, Menlo Park, California 2008-2012 Vice President RF Technology
Eridan Communications, Santa Clara, California 2014-2018 Vice President RF Devices
Eridan Communications, d.o.o. Zagreb 2019-2021 Managing Director