VLSI technology

Course Description

Progress and development of electronics and semiconductor technology. Principles and implication of scaling and Moore s law. Silicon crystal structure. Crystal growth and production of silicon wafers. Planar technology. Principles of process integration. Modern CMOS technology. Integration of fabrication steps in planar technology. Semiconductor doping methods: diffusion and ion implantation. Dopant distributions in silicon. Physical mechanisms of doping. Selectivity in semiconductor technology, lithography. Principles of isolation and passivization, thermal oxidation. Material removal in semiconductor technology, etching. Deposition of materials in semiconductor technology. Methods of on-chip interconnections of devices and circuit blocks. Metallization systems. Limitations of semiconductor technology. Advanced materials. Nano-technology.

General Competencies

Principles of semionductor technology and advanced micro- and nano- electron devices. Technology of modern VLSI chip design.

Learning Outcomes

  1. describe the scaling of semiconductor electron devices
  2. explain the silicon crystal structure
  3. explain the process steps in semiconductor fabrication technology
  4. analyze the cross-sections of transistor structures
  5. identify phisical priciples of fabrication steps in semiconductor technology
  6. distinguish the limitations of modern semiconductor technology
  7. combine the process steps for the MOS and bipolar transistor fabrication

Forms of Teaching

Lectures

Exams

Exercises

Experimental Exercises

Consultations

Grading Method

     
Continuous Assessment Exam
Type Threshold Percent of Grade Threshold Percent of Grade
Homeworks 0 % 6 % 0 % 0 %
Quizzes 0 % 9 % 0 % 0 %
Mid Term Exam: Written 0 % 30 % 0 %
Final Exam: Written 0 % 30 %
Final Exam: Oral 25 %
Exam: Written 50 % 50 %
Exam: Oral 50 %

Week by Week Schedule

  1. Progress and development of electronics and semiconductor technology. Principles and implication of scaling and Moore's law. Silicon crystal structure. Crystal growth and production of silicon wafers.
  2. Planar technology. Principles of process integration. Modern CMOS technology.
  3. Modern CMOS technology. Integration of fabrication steps in planar technology.
  4. Semiconductor doping methods: diffusion.
  5. Semiconductor doping methods: ion implantation.
  6. Dopant distributions in silicon. Physical mechanisms of doping.
  7. Selectivity in semiconductor technology, lithography.
  8. Principles of isolation and passivization, thermal oxidation.
  9. Material removal in semiconductor technology, etching.
  10. Deposition of materials in semiconductor technology.
  11. Methods of on-chip interconnections of devices and circuit blocks.
  12. Metallization systems.
  13. Limitations of semiconductor technology.
  14. Advanced materials.
  15. Introduction to Nano-technology.

Study Programmes

University graduate
Electronics (profile)
Recommended elective courses (3. semester)

Literature

James D. Plummer, Michael Deal, Peter B. Griffin (2000.), Silicon VLSI Technology: Fundamentals, Practice, and Modeling, Prentice Hall
Stanley Wolf, Richard N. Tauber (2000.), Silicon Processing for the VLSI Era, Vol. 1: Process Technology, Lattice Press
P. Biljanović (2001.), Mikroelektronika Integrirani elektronički sklopovi, Školska knjiga,

General

ID 34573
  Winter semester
4 ECTS
L1 English Level
L1 e-Learning
30 Lectures
0 Exercises
0 Laboratory exercises
0 Project laboratory

Grading System

87 Excellent
75 Very Good
62 Good
50 Acceptable