Modeling of Electronic Components for Integrated Circuits
- Understand the connection between measurements, implementation and calibration of the model, and circuit design.
- Choose an appropriate modeling approach depending on the application and software environment.
- Apply programming languages C and Verilog-A for model implementation.
- Explain the modeling methods for DC, AC, transient, high-frequency and noise simulations.
- Implement a (process) design kit in an electronic circuit simulation software package.
- Implement simple simulation software in C using advanced numerical libraries.
Forms of Teaching
According to weekly schedule with examples.Exams
Written exam with multiple-choice questions.Laboratory Work
Developing models and simulators of electron devices in packages/languages: Matlab, Verilog-A, C (with BLAS and LAPACK libraries), CUDA (with cuBLAS and cuSOLVER libraries).Seminars
|Type||Threshold||Percent of Grade||Threshold||Percent of Grade|
|Laboratory Exercises||50 %||40 %||50 %||40 %|
|Seminar/Project||0 %||20 %||0 %||0 %|
|Mid Term Exam: Written||0 %||20 %||0 %|
|Final Exam: Written||0 %||20 %|
|Exam: Written||0 %||60 %|
Week by Week Schedule
- SPICE packages for circuit simulations. Efficient implementation of SPICE in C for circuits with linear and non-linear components.
- Empirical FET models (Curtice, Triquint, Angelov).
- Physical FET models based on surface potential (BSIM, PSP) and charge (EKV).
- Basics of programming in Verilog-A with examples of passive components modeling.
- Verilog-A modeling of active components with examples of silicon diode and MOSFET.
- Verilog-A modeling of parasitic and temperature effects with an example of silicon BJT.
- Verilog-A modeling of noise and variability with an example of silicon BJT.
- Midterm exam
- Model and design kit development within Advanced Design System.
- Calibration of the design kit (I-V, transconductance, C-V, noise, fT, fmax) and validation using a demonstration circuit based on GaN HEMT.
- TCAD simulation of micro- and nano-components. Example of scaling effects in silicon FinFETs.
- Drift-diffusion model for semiconductor devices. Poisson's equation. Gummel's and Newton's method.
- Self-consistent numerical solution of drift-diffusion equations and implementation in C.
- Parasitic quantum effects in FETs at the nanoscale and inclusion of these effects into compact models. Example of developing a C code for the analysis of quantum effects in MOS devices.
- Presentation of student projects.