PristupačnostNa FER-u postoji više zaposlenika s imenom
- Bibliografija (CROSBI)
- Životopis
- Nastava
- Područja istraživanja
- Profesionalni interesi i članstva
- Osobni podaci
- Izabrani projekti
- Povijest zaposlenja
Negative-Inertia Converters: Devices Manifesting Negative Mass and Negative Moment of Inertia
Constant-resistance filters with diplexer architecture for S-band applications
Wavelength reuse WDM-PON using RSOA and modulation averaging
A proposal for characterizing global light pollution using a LEO nanosatellite
Link budget analysis for a proposed Cubesat Earth observation mission
10-MSymbols/s QAM-16 externally-modulated optical link for radio-over-fiber applications
Signal-to-noise ratio of arbitrarily filtered spontaneous emission
Wavelength-reuse fiber-optic transmitters
Optical-coupler based modulation-averaging structures for self-seeded colorless WDM-PON
Accurate estimate and measurement of continuous-wave noise in filtered incoherent light
Tunable transceivers for colorless spectrum-sliced WDM passive optical networks
Light sources with highly stable output intensity
Class-D GaN 15MHz-bandwidth amplitude modulator with a direct CMOS interface
Phase-stiff RF power amplifier for phased array transmit/receive modules
Fiber-optic vibration sensor for high-power electric machines realized using 3D printing technology
Temperature-stable LED-based light source without temperature control
Reaching less-than 100 ppm/K output intensity temperature stability with single-color light-emitting diodes
Ultra-stable LED sources
Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer
Optical sources employing self-seeding and modulation averaging
Modulation averaging reflectors
Temperature dependence of injection-locked Fabry- Pérot laser emission in WDM-PON architectures
Fiber-optic vibration sensor for high-power electric machines
Self-Seeded WDM-PON for Next Generation Broadband Access Networks
Optimal AlGaN/GaN HEMT Buffer Layer Thickness in the Presence of an Embedded Thermal Boundary
Temperature-stable incoherent light source
GaN-on-Diamond : The Next GaN
3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C
Diamond for enhanced GaN device performance
GaN-on-Diamond: A Brief History
Gallium--nitride-on-diamond wafers and devices, and methods of manufacture
RF and milimeter-wave high-power semiconductor device
C and L band Self-seeded WDM-PON Links using Injection locked Fabry-Pérot Lasers and Modulation Averaging
Colorless optical sources for fiber-optic access networks of new generation
Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier - Series Expansion
An ultra-stable VCSEL light source
Measurement of Thermal Boundary Resistance using Liquid Crystal Thermography
175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures
Integral-equation solution of modes in apertured laser resonators with distributed mirrors
High-stability light source system and method of manufacturing
Characterization of mirror-based modulation-averaging structures
Colorless Optical Network Architecture and Network Components
Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje
Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance
Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates
Semiconductor devices having gallium nitride epilayers on diamond substrates
47-km 1.25-Gbps transmission using a self-seeded transmitter with a modulation averaging reflector
Extended Cavity Light Source Using Modulation-Averaging Reflectors for WDM-PON
Interrogating FBG based temperature sensors — Practical issues
Laser machining of GaN-on-diamond wafers
Novel high temperature annealed schottky metal for GaN devices
Development of III-Nitride HEMTs on CVD Diamond Substrates
Advancements in GaN-on-Diamond HEMT and MMIC Fabrication
GaN-on-diamond Technology for Microwave/Millimeter-wave Applications
Poluvodički Nanotehnološki Centar u Hrvatskoj
Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof
Modulation-Averaging Reflectors for Extended-Cavity Optical Sources
Formation and characterization of 4-inch GaN-on-diamond substrates
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates
Comparative Study of AlGaN/GaN HEMTs on Free- Standing Diamond and Silicon Substrates for Thermal Effects
GaN-on-Diamond Field-Effect Transistors: from Wafers to Amplifier Modules
Nanotehnologija u Hrvatskoj – Šansa za male i zakašnjele
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
Croatian Semiconductor Industry Cluster
Semiconductor devices having gallium nitride epilayers on diamond substrates
Materials Characterization Comparison of GaN HEMT- on-Diamond Layers Pre- and Post-Attachment
High-bandwidth CX4 optical connector
Comparison of GaN HEMTs on Diamond and SiC Substrates
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress
Comparison of GaN HEMTs on Diamond and SiC Substrates
Diamond cools high-power transistors
AlGaN/GaN HEMT on Diamond Technology Demonstration
Multi-wavelength grating-outcoupled surface emitting laser system
Practical measurement of timing jitter contributed by a clock-and-data recovery circuit
Low-speed lasers, nonlinearities, and EDC
Comparison of EDC-enabled link performance using measured waveforms from 2.5G and 10G lasers
Embedded electromagnetic interference shield
Relationship between root-mean-square and peak-to- peak jitter measurements
System for optically pumping a long wavelength laser using a short wavelength laser
Flip-chip assembly for optically-pumped lasers
Active cables for FC-PI-2
Allowing IEC Class 1M Laser Safety certification for parallel optic PMD in 10GFC
TFI-5 Jitter Specification
Technical Specification for TFI-5 compliant optical components
TFI-5 based on 16-lane parallel optics
System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer
Integrated coupling modules for high-bandwidth fiber-optic systems
Interface of directly bonded GaAs and InP
10 Gb/s very short reach (VSR) interconnect solutions
Comment on FC-PI-2 rev12 Annex F.4: Relative Intensity Noise RIN(OMA) measuring procedure
Laser safety limits for single and four-lane short-wave optics
Four-lane power budgeting models from Alvesta
Laser safety for parallel-optic products
Four-lane 850nm optical interface
Buried layer in a semiconductor formed by bonding
System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation
System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation
Long-Wavelength VCSEL using buried bragg reflectors
Monolithic multiple wavelength VCSEL array
Surface emitting laser using two wafer bonded mirrors
4 x 2.5Gb/s multichannel optical transceiver
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
Analysis of polarization pinning in vertical- cavity surface-emitting lasers using etched trenches
Continuously tunable photopumped 1.3-μm fiber Fabry-Perot surface-emitting lasers
64°C continuous-wave operation of 1.5-μm vertical-cavity laser
Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offset
A finite-difference time-domain electromagnetic field solver for vertical-cavity lasers
Mode selectivity study of vertical-cavity surface-emitting lasers
Continuously-Tunable, Photo-Pumped 1.3-m Fiber Fabry-Perot Surface-Emitting Lasers
Growth of 1.3 um InGaAsN laser material on GaAs by MBE
Fusion bonding for vertical-cavity surface- emitting lasers
Monolithic integration of a vertical-cavity laser and a photo-detector for low bias-voltage operation
Near-ohmic p-InP/p-GaAs fused junctions
Methods for controlling the polarization in VCSELs
Growth of 1.3-um InGaAsN laser material on GaAs by MBE
The interior design of the new laser and New muxed laser arrays, sidebars in The ideal light source for datanets, by by K.S. Giboney, L.B. Aronson, B.E. Lemoff
Isotype heterojunctions with flat valence or conduction band
Design and analysis of double-fused 1.55-μm vertical-cavity lasers
Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching
Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers
Scattering losses from dielectric apertures in vertical-cavity lasers
Wafer fusion : materials issues and device results
Wafer Fusion for Surface-Normal Optoelectronic Device Applications
Structural and electrical characterization of the GaAs/InP wafer-fused interface
Capacitance-voltage and SIMS characterization of GaAs/InP fused junctions for 1300 nm vertical-cavity laser application
Submilliamp long wavelength vertical-cavity lasers
Characterisation of metal mirrors on GaAs
Estimation of scattering losses in dielectrically apertured vertical cavity lasers
Silicon heterointerface photodetector
Cleaved GaN facets by wafer fusion of GaN to InP
1-Gbit/s, single-mode operation of vertical cavity lasers emitting at 1.54 um
Numerical analysis of 1.54 μm double‐fused vertical‐cavity lasers operating continuous‐wave up to 35 °C
Laterally oxidized long wavelength cw vertical‐cavity lasers
Multimode fiber transmission using room temperature double-fused 1.54 μm vertical-cavity lasers
Long-wavelength vertical-cavity surface-emitting laser diodes
Modeling and optimization of 1.54 m double-fused VCSELs for cw operation above room temperature
1 Gbit/s, single-mode operation of vertical-cavity lasers emitting at 1.54 um
Laterally oxidized long wavelength CW vertical- cavity lasers
Cleaved facets in GaN by wafer fusion of GaN to InP
Loss limitations in dielectrically apertured vertical-cavity lasers
Multimore Fibre Transmission Using Room- Temperature Double-Fused 1.54 um Vertical- Cavity Lasers
Submilliamp long-wavelength vertical-cavity lasers
Loss analysis of 1.55 um vertical-cavity lasers
Current VCSEL research in HP Laboratories
Scattering parameters for lossless multisection quarter-wave transformers
Long-wavelength vertical-cavity lasers with GaAs mirrors
Room-temperature performance of double-fused 1.54 um vertical-cavity lasers
Progress in long-wavelength vertical-cavity lasers
Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers
Double‐fused 1.52‐μm vertical‐cavity lasers
Spontaneous emission in microcavities with distributed mirrors
Transverse-mode and polarisation characteristics of double-fused 1.52 um vertical-cavity lasers
Transverse-mode and polarization characteristics of double-fused 1.52 µm vertical-cavity lasers
Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers
Silicon hetero-interface photodetector
Long wavelength vertical cavity surface emitting lasers
Wafer fusion for optoelectronic applications
Long-wavelength vertical-cavity lasers
Double fused long-wavelength vertical cavity lasers
Scaling laws for gain‐guided vertical cavity lasers with distributed Bragg reflectors
Low threshold, wafer fused long wavelength vertical cavity lasers
Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers
High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors
Wafer fused, Low Threshold, Long Wavelength Vertical Cavity Lasers on GaAs substrates
Optically pumped all-epitaxial wafer-fused 1.52-µm vertical cavity lasers
Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces
Wafer bonding of InP and GaAs: Interface characterization and device applications
Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon
Limitations to Controlling Spontaneous Emission in Microcavities with Distributed Mirrors
Spontaneous Emission in Microcavities with Distributed Mirrors
Double-fused 1.52-µm vertical cavity lasers
Long wavelength surface emitting lasers on GaAs substrates
Long-wavelength vertical-cavity lasers
Long-wavelength vertical-cavity lasers
Modal reflection of quarter-wave mirrors in vertical-cavity lasers
Thermal resistance of 1.3μm InGaAsP vertical cavity lasers
Effect of layer thickness variations on propagation delay and penetration depth of a quarter-wave distributed Bragg reflector
Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates
Reactive ion etcher self‐bias voltage regulator
Vertical Cavity Laser High Speed Dynamics and Modeling
Wafer fused long wavelength vertical cavity lasers
Modal Reflectivity of Quarter-Wave Mirrors in Vertical Cavity Lasers
Classical analysis of microcavity lasers
Transverse modes in cavities with distributed Bragg reflectors
Conditions for Continuous Wave Operation of 1.3 µm InGaAsP Vertical Cavity Lasers
Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
InGaAsP Vertical Cavity Lasers
Analytic Expressions for the Reflection Delay, Penetration Depth and Absorptance of Quarter- Wave Dielectric Mirrors
Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications
Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers
Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves
144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates
In situ characterization of sputtered thin film optical coatings using a normal incidence laser reflectometer
Reactive Sputtering of Si/SiNx Quarter-wave Dielectric Mirrors using in-situ Laser Reflectometry
InGaAsP (1.3um) vertical-cavity lasers using GaAs/AlAs mirrors
Thermal design for CW of 1.3µm GaInAsP surface- emitting lasers
High Temperature Long Wavelength Vertical Cavity Lasers
In-Situ Monitoring of Etching and Deposition Processes for Optoelectronic Device Fabrication
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
High-temperature pulsed operation of InGaAsP/InP surface emitting lasers
Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Refractive Index of AlGaInAs on InP for Optoelectronic Applications
Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling
The role of non-uniform dielectric permittivity in the determination of heterojunction band offsets by cv-profiling through isotype heterojunctions
Characterization of Isotype Heterojunctions by Capacitance-Voltage Carrier Concentration Profiling
Osobine Lateralno Profiliranih Elemenata u Bipolarnoj Integriranoj Tehnologiji
High Intensity Single-Mode VCSELs
Buried layer in a semiconductor formed by bonding
Gallium-nitride-on-diamond wafers and devices, and methods of manufacture
Monolithic multiple wavelength VCSEL array
Wavelength tuning of Fabry-Perot lasers in spectrum-sliced optical links
Životopis
Dubravko I. Babić rođen je u Zagrebu u Hrvatskoj. Diplomirao je na Fakultetu elektrotehnike i računarstva Sveučilišta u Zagrebu 1982., a magistrirao je 1984. godine i doktorirao 1995. godine na Sveučilištu u Kaliforniji, Santa Barbara.
Od 1982. do 1985. godine radio je magisterij na kapacitivnim metodama mjerenja diskontinuiteta u energetskim vrpcama na AlGaAs/GaAs heterospojevima sa prof. dr. sc. Herbertom Kroemerom na Kalifornijskom Sveučilištu u Santa Barbari. Od 1985. do 1989. godine radio je u tvrtki Avantek, Inc. u Santa Clari na razvoju mikrovalnih dioda za preklapanje (microwave switching diodes) i ograničavanje (limiter diodes) na frekvencijama do 40 GHz, i na varaktorskim diodama za naponski kontrolirane oscilatore na 3 GHz.
Godine 1989. pridružio se grupi za ultrabrzu optoelektroniku na Sveučilištu u Kaliforniji, Santa Barbara sa profesorima John E. Bowers i Evelyn L. Hu kako bi kao doktorand radio na razvoju lasera s vertikalnom rezonantnom šupljinom (VCSEL) gdje je 1995. prvi na svijetu demonstrirao VCSEL na valnoj duljini od 1550nm i koji je radio u kontinuiranom režimu na sobnoj temperaturi. Nakon doktorata, od 1995. do 1999. godine radio je u Hewlett-Packard laboratorijama u Palo Altu u Kaliforniji kao član tehničkog osoblja na razvoju VCSEL dioda korištenjem wafer-bonding tehnologije.
Godine 1999. osnovao je startup Alvesta Corporation (Sunnyvale, CA) koja je razvila i proizvodila 10Gb/s višekanalne svjetlovodne module. Prvo je radio kao glavni direktor (Chief Executive Officer), a kasnije, od 2001. godine, kao glavni tehnički direktor (Chief Technical Officer). Za Alvestu je dobavio $20 milijuna rizičnog kapitala i njome upravljao do prve prodaje proizvoda 2000. godine (Alvestu je kupila Emcore Corporation 2002. godine). Između 2003. i 2008. godine radio je kao savjetnik za Clariphy Communications, Inc. (Irvine, SAD) i XLoom Communications, Ltd (Tel Aviv, Israel) na razvoju optičkih i elektroničkih komponenti za velike brzine prijenosa.
Od 2008. do 2013. godine vodio je razvoj radiofrekvencijskih i milimetarskih pojačala temeljenih na AlGaN/GaN tranzistorima sa efektom polja koji su izrađeni na sintetičkom dijamantu kao potpredsjednik za tehnologiju i suosnivač startupa Group4 Labs, Inc. (Fremont, CA) gdje je rakođer razvio postupak za lasersko oblikovanje dijamantnih čipova i izgradio sustav za mjerenje pouzdanosti tranzistora, a njegov tim je 2009. godine prvi na svijetu demonstrirao kompletno pojačalo (u kučištu) na 10 GHz temeljeno na tehnologiji galijevog nitrida na dijamantu (Group4 Labs je kupila tvrtka Element Six 2013. godine).
Nakon Group4 Labs sudjelovao je u osnivanju u Eridan Communications, Inc. (eridan.io), startup tvrtke u Santa Clari, CA, koja razvija polarne modulatore za bežične komunikacije temeljene na galijevom nitridu (GaN). Od 2012. godine radi na Fakultetu elektrotehnike i računarstva Sveučilišta u Zagrebu u Laboratoriju za primjenjenu optiku Zavoda za komunikacijske i svemirske tehnologije, a 2022. godine izabran je za redovitog profesora.
Prof. Babić je također radio kao sudski vještak za intelektualno vlasništvo u SAD (2003-2012) i Hrvatskoj (2017 i 2023). Od 2005. godine piše patentne prijave za razne klijente, a od 2012 za FER.
Njegovi znanstveni interesi uključuju optoelektroničke i elektroničke komponente za velike brzine prijenosa informacija, poluvodičke komponente i optiku. Objavio je preko 140 publikacija u časopisima i na konferencijama, ima 36 odobrenih patenata i napisao je jedno poglavlje u knjizi (Web of Science h-index 27, a Google Scholar h-index je 37).
Istraživačka grupa sa Sveučilišta Stanford u Kaliforniji (SAD) je 2021 godine objavila studiju o znanstvenoj citiranosti koja rangira oko 160 000 najcitiranijih svjetskih znanstvenika u svim disciplinama (https://doi.org/10.1371/journal.pbio.3000918). Studija je objavila listu najutjecajnijih znanstvenika za cjelokupnu znanstvenu karijeru: prof. dr. sc. Dubravko Babić je u top 2% znanstvenika u svijetu u području "Optoelectronics and Photonics".
Nastava
Sveučilišni preddiplomski
- Optoelektronika (Nositelj)
- Optoelektronika (Nositelj)
- Uvod u svemirske tehnologije (Nositelj)
- Uvod u svemirske tehnologije (Nositelj)
- Projekt (Predavanja)
- Projekt (Predavanja)
- Projekt E (Predavanja)
- Projekt iz programske potpore (Predavanja)
- Završni projekt (Predavanja)
- Završni rad (Predavanja)
- Završni rad (Predavanja)
- Završni rad (Predavanja)
Sveučilišni diplomski
- Intelektualno vlasništvo u industriji (Nositelj)
- Intelektualno vlasništvo u industriji (Nositelj)
- Optičke mreže (Nositelj)
- Optički komunikacijski sustavi (Nositelj)
- Optički komunikacijski sustavi (Nositelj)
- Primijenjena kvantna mehanika (Nositelj)
- Svemirske tehnologije (Nositelj)
- Visokofrekvencijska i mikrovalna elektronika (Nositelj)
- Diplomski projekt (Predavanja)
- Diplomski projekt (Predavanja)
- Diplomski projekt (Predavanja)
- Diplomski rad (Predavanja)
- Diplomski rad (Predavanja)
- Diplomski rad (Predavanja)
- Projekt (Predavanja)
- Seminar 1 (Predavanja)
- Seminar 2 (Predavanja)
Poslijediplomski doktorski
Poslijediplomski specijalistički
- Upravljanje inovacijama (Nositelj)
Kompetencije
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Components, packaging, and manufacturing technology
Electronic components -
Antennas and propagation
Optical diffraction Optical reflection Microwave propagation Millimeter wave propagation Optical propagation -
Circuits and systems
Electronic circuits Switching circuits Filters -
Communications technology
Optical communication equipment Radio communication equipment Optical receivers Radio transceivers Optical transmitters Radio transmitters Data communication Radio communication Satellite communication Satellite ground stations -
Electron devices
Junctions Semiconductor lasers Transistors -
Lasers and electrooptics
Semiconductor lasers -
Aerospace and electronic systems
Payloads
Profesionalni interesi i članstva
IEEE, OPTICA, MIPRO
Osobni podaci
Izabrani projekti
Voditelj projekta - CROSPERITY Platforma za satelitsko mjerenje elektromagnetskog zračenja, Hrvatska zaklada za znanost, IP-01-2018-2504.
Voditelj projekta - European Space Agency Contract No. 4000138775/22/NL/SC Light-pollution characterization module (October 2022 - September 2023).
Sudionik kontakt - Digital Europe Programme DIGITAL-2021-QCI-01-DEPLOY-NATIONAL (#101091513) Croatian Quantum Communication Infrastructure - CroQCI (January 2023 - December 2023).
Povijest zaposlenja
University of California, Santa Barbara 1983-1985 Research Assistant
Avantek, Inc., Santa Clara, California 1985-1989 Design Engineer
University of California, Santa Barbara 1989-1995 Research Assistant
Hewlett-Packard, Palo Alto, California 1995-1999 Member of Technical Staff
Alvesta Corporation, Sunnyvale, California 1999-2002 Chief Executive Office / Chief Technical Officer
Etanvie Technologies, Santa Clara, California 2003-2008 Chief Technologist
Group4 Labs, Menlo Park, California 2008-2012 Vice President RF Technology
Eridan Communications, Santa Clara, California 2014 Vice President RF Devices
Eridan Communications, d.o.o., Zagreb 2019 Managing Director