Negative-Inertia Converters: Devices Manifesting Negative Mass and Negative Moment of Inertia

Constant-resistance filters with diplexer architecture for S-band applications

Wavelength reuse WDM-PON using RSOA and modulation averaging

A proposal for characterizing global light pollution using a LEO nanosatellite

Link budget analysis for a proposed Cubesat Earth observation mission

10-MSymbols/s QAM-16 externally-modulated optical link for radio-over-fiber applications

Signal-to-noise ratio of arbitrarily filtered spontaneous emission

Wavelength-reuse fiber-optic transmitters

Optical-coupler based modulation-averaging structures for self-seeded colorless WDM-PON

Accurate estimate and measurement of continuous-wave noise in filtered incoherent light

Tunable transceivers for colorless spectrum-sliced WDM passive optical networks

Light sources with highly stable output intensity

Class-D GaN 15MHz-bandwidth amplitude modulator with a direct CMOS interface

Phase-stiff RF power amplifier for phased array transmit/receive modules

Fiber-optic vibration sensor for high-power electric machines realized using 3D printing technology

Temperature-stable LED-based light source without temperature control

Reaching less-than 100 ppm/K output intensity temperature stability with single-color light-emitting diodes

Ultra-stable LED sources

Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates using intermediate nucleating layer

Optical sources employing self-seeding and modulation averaging

Modulation averaging reflectors

Temperature dependence of injection-locked Fabry- Pérot laser emission in WDM-PON architectures

Fiber-optic vibration sensor for high-power electric machines

Self-Seeded WDM-PON for Next Generation Broadband Access Networks

Optimal AlGaN/GaN HEMT Buffer Layer Thickness in the Presence of an Embedded Thermal Boundary

Temperature-stable incoherent light source

GaN-on-Diamond : The Next GaN

3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C

Diamond for enhanced GaN device performance

GaN-on-Diamond: A Brief History

Gallium--nitride-on-diamond wafers and devices, and methods of manufacture

RF and milimeter-wave high-power semiconductor device

C and L band Self-seeded WDM-PON Links using Injection locked Fabry-Pérot Lasers and Modulation Averaging

Colorless optical sources for fiber-optic access networks of new generation

Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier - Series Expansion

An ultra-stable VCSEL light source

Measurement of Thermal Boundary Resistance using Liquid Crystal Thermography

175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures

Integral-equation solution of modes in apertured laser resonators with distributed mirrors

High-stability light source system and method of manufacturing

Characterization of mirror-based modulation-averaging structures

Colorless Optical Network Architecture and Network Components

Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje

Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance

Method for manufacturing semiconductor devices having gallium nitride epilayers on diamond substrates

Semiconductor devices having gallium nitride epilayers on diamond substrates

47-km 1.25-Gbps transmission using a self-seeded transmitter with a modulation averaging reflector

Extended Cavity Light Source Using Modulation-Averaging Reflectors for WDM-PON

Interrogating FBG based temperature sensors — Practical issues

Laser machining of GaN-on-diamond wafers

Novel high temperature annealed schottky metal for GaN devices

Development of III-Nitride HEMTs on CVD Diamond Substrates

Advancements in GaN-on-Diamond HEMT and MMIC Fabrication

GaN-on-diamond Technology for Microwave/Millimeter-wave Applications

Poluvodički Nanotehnološki Centar u Hrvatskoj

Composite wafers having bulk-quality semiconductor layers and method of manufacturing thereof

Modulation-Averaging Reflectors for Extended-Cavity Optical Sources

Formation and characterization of 4-inch GaN-on-diamond substrates

Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates

Comparative Study of AlGaN/GaN HEMTs on Free- Standing Diamond and Silicon Substrates for Thermal Effects

GaN-on-Diamond Field-Effect Transistors: from Wafers to Amplifier Modules

Nanotehnologija u Hrvatskoj – Šansa za male i zakašnjele

Frequency performance enhancement of AlGaN/GaN HEMTs on diamond

Croatian Semiconductor Industry Cluster

Semiconductor devices having gallium nitride epilayers on diamond substrates

Materials Characterization Comparison of GaN HEMT- on-Diamond Layers Pre- and Post-Attachment

High-bandwidth CX4 optical connector

Comparison of GaN HEMTs on Diamond and SiC Substrates

GaN-HEMT Epilayers on Diamond Substrates: Recent Progress

Comparison of GaN HEMTs on Diamond and SiC Substrates

Diamond cools high-power transistors

AlGaN/GaN HEMT on Diamond Technology Demonstration

Multi-wavelength grating-outcoupled surface emitting laser system

Practical measurement of timing jitter contributed by a clock-and-data recovery circuit

Low-speed lasers, nonlinearities, and EDC

Comparison of EDC-enabled link performance using measured waveforms from 2.5G and 10G lasers

Embedded electromagnetic interference shield

Relationship between root-mean-square and peak-to- peak jitter measurements

System for optically pumping a long wavelength laser using a short wavelength laser

Flip-chip assembly for optically-pumped lasers

Active cables for FC-PI-2

Allowing IEC Class 1M Laser Safety certification for parallel optic PMD in 10GFC

TFI-5 Jitter Specification

Technical Specification for TFI-5 compliant optical components

TFI-5 based on 16-lane parallel optics

System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer

Integrated coupling modules for high-bandwidth fiber-optic systems

Interface of directly bonded GaAs and InP

10 Gb/s very short reach (VSR) interconnect solutions

Comment on FC-PI-2 rev12 Annex F.4: Relative Intensity Noise RIN(OMA) measuring procedure

Laser safety limits for single and four-lane short-wave optics

Four-lane power budgeting models from Alvesta

Laser safety for parallel-optic products

Four-lane 850nm optical interface

Buried layer in a semiconductor formed by bonding

System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation

System and method for the monolithic integration of a light emitting device and a heterojunction phototransistor for low bias voltage operation

Long-Wavelength VCSEL using buried bragg reflectors

Monolithic multiple wavelength VCSEL array

Surface emitting laser using two wafer bonded mirrors

4 x 2.5Gb/s multichannel optical transceiver

Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy

Analysis of polarization pinning in vertical- cavity surface-emitting lasers using etched trenches

Continuously tunable photopumped 1.3-μm fiber Fabry-Perot surface-emitting lasers

64°C continuous-wave operation of 1.5-μm vertical-cavity laser

Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offset

A finite-difference time-domain electromagnetic field solver for vertical-cavity lasers

Mode selectivity study of vertical-cavity surface-emitting lasers

Continuously-Tunable, Photo-Pumped 1.3-m Fiber Fabry-Perot Surface-Emitting Lasers

Growth of 1.3 um InGaAsN laser material on GaAs by MBE

Fusion bonding for vertical-cavity surface- emitting lasers

Monolithic integration of a vertical-cavity laser and a photo-detector for low bias-voltage operation

Near-ohmic p-InP/p-GaAs fused junctions

Methods for controlling the polarization in VCSELs

Growth of 1.3-um InGaAsN laser material on GaAs by MBE

The interior design of the new laser and New muxed laser arrays, sidebars in The ideal light source for datanets, by by K.S. Giboney, L.B. Aronson, B.E. Lemoff

Isotype heterojunctions with flat valence or conduction band

Design and analysis of double-fused 1.55-μm vertical-cavity lasers

Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching

Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers

Scattering losses from dielectric apertures in vertical-cavity lasers

Wafer fusion : materials issues and device results

Wafer Fusion for Surface-Normal Optoelectronic Device Applications

Structural and electrical characterization of the GaAs/InP wafer-fused interface

Capacitance-voltage and SIMS characterization of GaAs/InP fused junctions for 1300 nm vertical-cavity laser application

Submilliamp long wavelength vertical-cavity lasers

Characterisation of metal mirrors on GaAs

Estimation of scattering losses in dielectrically apertured vertical cavity lasers

Silicon heterointerface photodetector

Cleaved GaN facets by wafer fusion of GaN to InP

1-Gbit/s, single-mode operation of vertical cavity lasers emitting at 1.54 um

Numerical analysis of 1.54 μm double‐fused vertical‐cavity lasers operating continuous‐wave up to 35 °C

Laterally oxidized long wavelength cw vertical‐cavity lasers

Multimode fiber transmission using room temperature double-fused 1.54 μm vertical-cavity lasers

Long-wavelength vertical-cavity surface-emitting laser diodes

Modeling and optimization of 1.54 m double-fused VCSELs for cw operation above room temperature

1 Gbit/s, single-mode operation of vertical-cavity lasers emitting at 1.54 um

Laterally oxidized long wavelength CW vertical- cavity lasers

Cleaved facets in GaN by wafer fusion of GaN to InP

Loss limitations in dielectrically apertured vertical-cavity lasers

Multimore Fibre Transmission Using Room- Temperature Double-Fused 1.54 um Vertical- Cavity Lasers

Submilliamp long-wavelength vertical-cavity lasers

Loss analysis of 1.55 um vertical-cavity lasers

Current VCSEL research in HP Laboratories

Scattering parameters for lossless multisection quarter-wave transformers

Long-wavelength vertical-cavity lasers with GaAs mirrors

Room-temperature performance of double-fused 1.54 um vertical-cavity lasers

Progress in long-wavelength vertical-cavity lasers

Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers

Double‐fused 1.52‐μm vertical‐cavity lasers

Spontaneous emission in microcavities with distributed mirrors

Transverse-mode and polarisation characteristics of double-fused 1.52 um vertical-cavity lasers

Transverse-mode and polarization characteristics of double-fused 1.52 µm vertical-cavity lasers

Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers

Silicon hetero-interface photodetector

Long wavelength vertical cavity surface emitting lasers

Wafer fusion for optoelectronic applications

Long-wavelength vertical-cavity lasers

Double fused long-wavelength vertical cavity lasers

Scaling laws for gain‐guided vertical cavity lasers with distributed Bragg reflectors

Low threshold, wafer fused long wavelength vertical cavity lasers

Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers

High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors

Wafer fused, Low Threshold, Long Wavelength Vertical Cavity Lasers on GaAs substrates

Optically pumped all-epitaxial wafer-fused 1.52-µm vertical cavity lasers

Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates

Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces

Wafer bonding of InP and GaAs: Interface characterization and device applications

Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon

Limitations to Controlling Spontaneous Emission in Microcavities with Distributed Mirrors

Spontaneous Emission in Microcavities with Distributed Mirrors

Double-fused 1.52-µm vertical cavity lasers

Long wavelength surface emitting lasers on GaAs substrates

Long-wavelength vertical-cavity lasers

Long-wavelength vertical-cavity lasers

Modal reflection of quarter-wave mirrors in vertical-cavity lasers

Thermal resistance of 1.3μm InGaAsP vertical cavity lasers

Effect of layer thickness variations on propagation delay and penetration depth of a quarter-wave distributed Bragg reflector

Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates

Reactive ion etcher self‐bias voltage regulator

Vertical Cavity Laser High Speed Dynamics and Modeling

Wafer fused long wavelength vertical cavity lasers

Modal Reflectivity of Quarter-Wave Mirrors in Vertical Cavity Lasers

Classical analysis of microcavity lasers

Transverse modes in cavities with distributed Bragg reflectors

Conditions for Continuous Wave Operation of 1.3 µm InGaAsP Vertical Cavity Lasers

Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates

InGaAsP Vertical Cavity Lasers

Analytic Expressions for the Reflection Delay, Penetration Depth and Absorptance of Quarter- Wave Dielectric Mirrors

Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications

Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers

Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves

144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates

In situ characterization of sputtered thin film optical coatings using a normal incidence laser reflectometer

Reactive Sputtering of Si/SiNx Quarter-wave Dielectric Mirrors using in-situ Laser Reflectometry

InGaAsP (1.3um) vertical-cavity lasers using GaAs/AlAs mirrors

Thermal design for CW of 1.3µm GaInAsP surface- emitting lasers

High Temperature Long Wavelength Vertical Cavity Lasers

In-Situ Monitoring of Etching and Deposition Processes for Optoelectronic Device Fabrication

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

High-temperature pulsed operation of InGaAsP/InP surface emitting lasers

Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers

Refractive Index of AlGaInAs on InP for Optoelectronic Applications

Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling

The role of non-uniform dielectric permittivity in the determination of heterojunction band offsets by cv-profiling through isotype heterojunctions

Characterization of Isotype Heterojunctions by Capacitance-Voltage Carrier Concentration Profiling

Osobine Lateralno Profiliranih Elemenata u Bipolarnoj Integriranoj Tehnologiji

High Intensity Single-Mode VCSELs

Buried layer in a semiconductor formed by bonding

Gallium-nitride-on-diamond wafers and devices, and methods of manufacture

Monolithic multiple wavelength VCSEL array

Wavelength tuning of Fabry-Perot lasers in spectrum-sliced optical links