Pristupačnost
- Prikaži radove
- Životopis
- Područja istraživanja
- Profesionalni interesi i članstva
- Osobni podaci
- Izabrani projekti
- Povijest zaposlenja
Towards Spectral Data Reduction in Paprika Powder Adulteration Detection
Optical Ground Station Proposal for Croatian Quantum Communication Infrastructure
Assessment of Signal Losses in LEO Satellite-to-Ground Optical Communication Links
Optical Ground Station Proposal for Croatian Quantum Communication Infrastructure
Optical Filter Selection for the Detection of Light Pollution from Low Earth Orbit
Light-Pollution Characterization from LEO
Light-Pollution Characterization Module
Negative-Inertia Converters: Devices Manifesting Negative Mass and Negative Moment of Inertia
A proposal for characterizing global light pollution using a LEO nanosatellite
Constant-resistance filters with diplexer architecture for S-band applications
Wavelength reuse WDM-PON using RSOA and modulation averaging
Link budget analysis for a proposed Cubesat Earth observation mission
Signal-to-noise ratio of arbitrarily filtered spontaneous emission
10-MSymbols/s QAM-16 externally-modulated optical link for radio-over-fiber applications
Accurate estimate and measurement of continuous-wave noise in filtered incoherent light
Fiber-optic vibration sensor for high-power electric machines realized using 3D printing technology
Temperature-stable LED-based light source without temperature control
Reaching <100 ppm/K output intensity temperature stability with single-color light-emitting diodes
Ultra-stable LED sources
Class-D GaN 15MHz-bandwidth amplitude modulator with a direct CMOS interface
Temperature dependence of injection-locked Fabry- Pérot laser emission in WDM-PON architectures
Fiber-optic vibration sensor for high-power electric machines
Self-Seeded WDM-PON for Next Generation Broadband Access Networks
3, 000+ Hours Continuous Operation of GaN-on- Diamond HEMTs at 350°C
Optimal AlGaN/GaN HEMT Buffer Layer Thickness in the Presence of an Embedded Thermal Boundary
Diamond for enhanced GaN device performance
GaN-on-Diamond : The Next GaN
Colorless optical sources for fiber-optic access networks of new generation
C and L band Self-seeded WDM-PON Links using Injection locked Fabry-Pérot Lasers and Modulation Averaging
GaN-on-Diamond: A Brief History
Measurement of Thermal Boundary Resistance using Liquid Crystal Thermography
An ultra-stable VCSEL light source
175, 000 Device-Hours Operation of AlGaN/GaN HEMTs on Diamond at 200°C Channel Temperatures
Stanje i budućnost mikroelektronike i elektroničke tehnologije kod nas i u svijetu - Prilika za uključenje
Characterization of mirror-based modulation-averaging structures
Integral-equation solution of modes in apertured laser resonators with distributed mirrors
Thermal Analysis of AlGaN/GaN HEMTs Using Angular Fourier - Series Expansion
Comparison of GaN on Diamond with GaN on SiC HEMT and MMIC Performance
Interrogating FBG based temperature sensors — Practical issues
47-km 1.25-Gbps transmission using a self-seeded transmitter with a modulation averaging reflector
Extended Cavity Light Source Using Modulation-Averaging Reflectors for WDM-PON
Development of III-Nitride HEMTs on CVD Diamond Substrates
Poluvodički Nanotehnološki Centar u Hrvatskoj
GaN-on-diamond Technology for Microwave/Millimeter-wave Applications
Modulation-Averaging Reflectors for Extended-Cavity Optical Sources
Laser machining of GaN-on-diamond wafers
Novel high temperature annealed schottky metal for GaN devices
Advancements in GaN-on-Diamond HEMT and MMIC Fabrication
Comparative Study of AlGaN/GaN HEMTs on Free- Standing Diamond and Silicon Substrates for Thermal Effects
Formation and characterization of 4-inch GaN-on-diamond substrates
GaN-on-Diamond Field-Effect Transistors: from Wafers to Amplifier Modules
Full-Wafer Characterization of AlGaN/GaN HEMTs on Free- Standing CVD Diamond Substrates
Nanotehnologija u Hrvatskoj – Šansa za male i zakašnjele
Croatian Semiconductor Industry Cluster
Frequency performance enhancement of AlGaN/GaN HEMTs on diamond
Materials Characterization Comparison of GaN HEMT- on-Diamond Layers Pre- and Post-Attachment
High-bandwidth CX4 optical connector
Comparison of GaN HEMTs on Diamond and SiC Substrates
GaN-HEMT Epilayers on Diamond Substrates: Recent Progress
Diamond cools high-power transistors
Comparison of GaN HEMTs on Diamond and SiC Substrates
AlGaN/GaN HEMT on Diamond Technology Demonstration
Practical measurement of timing jitter contributed by a clock-and-data recovery circuit
Comparison of EDC-enabled link performance using measured waveforms from 2.5G and 10G lasers
Low-speed lasers, nonlinearities, and EDC
Relationship between root-mean-square and peak-to- peak jitter measurements
TFI-5 based on 16-lane parallel optics
Active cables for FC-PI-2
Allowing IEC Class 1M Laser Safety certification for parallel optic PMD in 10GFC
TFI-5 Jitter Specification
Technical Specification for TFI-5 compliant optical components
Four-lane 850nm optical interface
Comment on FC-PI-2 rev12 Annex F.4: Relative Intensity Noise RIN(OMA) measuring procedure
Interface of directly bonded GaAs and InP
10 Gb/s very short reach (VSR) interconnect solutions
Laser safety limits for single and four-lane short-wave optics
Laser safety for parallel-optic products
Four-lane power budgeting models from Alvesta
4 x 2.5Gb/s multichannel optical transceiver
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
Analysis of polarization pinning in vertical- cavity surface-emitting lasers using etched trenches
Continuously-Tunable, Photo-Pumped 1.3-m Fiber Fabry-Perot Surface-Emitting Lasers
Growth of 1.3-um InGaAsN laser material on GaAs by MBE
Continuously tunable photopumped 1.3-μm fiber Fabry-Perot surface-emitting lasers
The interior design of the new laser and New muxed laser arrays, sidebars in The ideal light source for datanets, by by K.S. Giboney, L.B. Aronson, B.E. Lemoff
Growth of 1.3 um InGaAsN laser material on GaAs by MBE
Fusion bonding for vertical-cavity surface- emitting lasers
Monolithic integration of a vertical-cavity laser and a photo-detector for low bias-voltage operation
Near-ohmic p-InP/p-GaAs fused junctions
Methods for controlling the polarization in VCSELs
A finite-difference time-domain electromagnetic field solver for vertical-cavity lasers
Mode selectivity study of vertical-cavity surface-emitting lasers
64°C continuous-wave operation of 1.5-μm vertical-cavity laser
Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at −30 nm gain offset
Scattering losses from dielectric apertures in vertical-cavity lasers
Wafer Fusion for Surface-Normal Optoelectronic Device Applications
Fabrication of high-aspect-ratio InP-based vertical-cavity laser mirrors using CH4/H2/O2/Ar reactive ion etching
Design and analysis of double-fused 1.55-μm vertical-cavity lasers
Capacitance-voltage and SIMS characterization of GaAs/InP fused junctions for 1300 nm vertical-cavity laser application
Isotype heterojunctions with flat valence or conduction band
Wafer fusion : materials issues and device results
Structural and electrical characterization of the GaAs/InP wafer-fused interface
Simulation and analysis of 1.55 μm double-fused vertical-cavity lasers
Multimore Fibre Transmission Using Room- Temperature Double-Fused 1.54 um Vertical- Cavity Lasers
Room-temperature performance of double-fused 1.54 um vertical-cavity lasers
Estimation of scattering losses in dielectrically apertured vertical cavity lasers
Characterisation of metal mirrors on GaAs
Long-wavelength vertical-cavity surface-emitting laser diodes
Loss analysis of 1.55 um vertical-cavity lasers
Scattering parameters for lossless multisection quarter-wave transformers
Current VCSEL research in HP Laboratories
Long-wavelength vertical-cavity lasers with GaAs mirrors
Submilliamp long wavelength vertical cavity lasers
Cleaved GaN facets by wafer fusion of GaN to InP
Silicon heterointerface photodetector
Laterally oxidized long wavelength cw vertical‐cavity lasers
Numerical analysis of 1.54 μm double‐fused vertical‐cavity lasers operating continuous‐wave up to 35 °C
Multimode fiber transmission using room temperature double-fused 1.54 μm vertical-cavity lasers
Submilliamp long-wavelength vertical-cavity lasers
Progress in long-wavelength vertical-cavity lasers
Modeling and optimization of 1.54 m double-fused VCSELs for cw operation above room temperature
1-Gbit/s, single-mode operation of vertical cavity lasers emitting at 1.54 um
1 Gbit/s, single-mode operation of vertical-cavity lasers emitting at 1.54 um
Laterally oxidized long wavelength CW vertical- cavity lasers
Cleaved facets in GaN by wafer fusion of GaN to InP
Loss limitations in dielectrically apertured vertical-cavity lasers
Long-wavelength vertical-cavity lasers
Double‐fused 1.52‐μm vertical‐cavity lasers
Transverse-mode and polarization characteristics of double-fused 1.52 µm vertical-cavity lasers
Long wavelength vertical cavity surface emitting lasers
Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers
Wafer fusion for optoelectronic applications
Transverse-mode and polarisation characteristics of double-fused 1.52 um vertical-cavity lasers
Silicon hetero-interface photodetector
Room-temperature continuous-wave operation of 1.54 µm vertical-cavity lasers
Spontaneous emission in microcavities with distributed mirrors
Long-wavelength vertical-cavity lasers
Scaling laws for gain‐guided vertical cavity lasers with distributed Bragg reflectors
Temperature and Transverse Mode Characteristics of InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Spontaneous Emission in Microcavities with Distributed Mirrors
Limitations to Controlling Spontaneous Emission in Microcavities with Distributed Mirrors
Optically pumped all-epitaxial wafer-fused 1.52 µm vertical-cavity lasers
Wafer bonding of InP and GaAs: Interface characterization and device applications
Long wavelength surface emitting lasers on GaAs substrates
Long-wavelength vertical-cavity lasers
Wafer fused, Low Threshold, Long Wavelength Vertical Cavity Lasers on GaAs substrates
Anisotropy Control in the Reactive Ion Etching of InP Using Oxygen in Methane/Hydrogen/Argon
Optically pumped all-epitaxial wafer-fused 1.52-µm vertical cavity lasers
High quantum efficiency and narrow absorption bandwidth of the wafer-fused resonant In0.53Ga0.47As photodetectors
Double-fused 1.52-µm vertical cavity lasers
Low threshold, wafer fused long wavelength vertical cavity lasers
Low-Temperature Pd Direct Bonding and Electrical Transport Across InP-Pd-GaAs Interfaces
Conditions for Continuous Wave Operation of 1.3 µm InGaAsP Vertical Cavity Lasers
Low Threshold, Electrically Injected InGaAsP (1.3 µm) Vertical Cavity Lasers on GaAs substrates
Low threshold, electrically injected InGaAsP (1.3 um) vertical cavity lasers on GaAs substrates
Thermal resistance of 1.3μm InGaAsP vertical cavity lasers
Transverse modes in cavities with distributed Bragg reflectors
Modal Reflectivity of Quarter-Wave Mirrors in Vertical Cavity Lasers
Effect of layer thickness variations on propagation delay and penetration depth of a quarter-wave distributed Bragg reflector
Wafer fused long wavelength vertical cavity lasers
Vertical Cavity Laser High Speed Dynamics and Modeling
InGaAsP Vertical Cavity Lasers
Reactive ion etcher self‐bias voltage regulator
Classical analysis of microcavity lasers
Modal reflection of quarter-wave mirrors in vertical-cavity lasers
144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates
Epitaxial AlGaAs/AlAs distributed Bragg reflectors for green (550 nm) lightwaves
Effects of nonuniform current injection in GaInAsP/InP vertical‐ cavity lasers
Reactive Sputtering of Si/SiNx Quarter-wave Dielectric Mirrors using in-situ Laser Reflectometry
InGaAsP (1.3um) vertical-cavity lasers using GaAs/AlAs mirrors
Analytic Expressions for the Reflection Delay, Penetration Depth and Absorptance of Quarter- Wave Dielectric Mirrors
Refractive indexes of (Al, Ga, In)As epilayers on InP for optoelectronic applications
In-Situ Monitoring of Etching and Deposition Processes for Optoelectronic Device Fabrication
In situ characterization of sputtered thin film optical coatings using a normal incidence laser reflectometer
Thermal design for CW of 1.3µm GaInAsP surface- emitting lasers
High Temperature Long Wavelength Vertical Cavity Lasers
High-temperature pulsed operation of InGaAsP/InP surface emitting lasers
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Low-threshold, high-temperature pulsed operation of InGaAsP/InP vertical cavity surface emitting lasers
Sputter deposition of precision Si/Si3N4 Bragg reflectors using multitasking interactive processing control
Refractive Index of AlGaInAs on InP for Optoelectronic Applications
Determination of valence and conduction‐band discontinuities at the (Ga, In) P/GaAs heterojunction by C‐V profiling
The role of non-uniform dielectric permittivity in the determination of heterojunction band offsets by cv-profiling through isotype heterojunctions
Characterization of Isotype Heterojunctions by Capacitance-Voltage Carrier Concentration Profiling
Životopis
Dubravko I. Babić rođen je u Zagrebu u Hrvatskoj. Diplomirao je na Fakultetu elektrotehnike i računarstva Sveučilišta u Zagrebu 1982., a magistrirao je 1984. godine i doktorirao 1995. godine na Sveučilištu u Kaliforniji, Santa Barbara.
Od 1982. do 1985. godine radio je magisterij na kapacitivnim metodama mjerenja diskontinuiteta u energetskim vrpcama na AlGaAs/GaAs heterospojevima sa prof. dr. sc. Herbertom Kroemerom na Kalifornijskom Sveučilištu u Santa Barbari. Od 1985. do 1989. godine radio je u tvrtki Avantek, Inc. u Santa Clari na razvoju mikrovalnih dioda za preklapanje (microwave switching diodes) i ograničavanje (limiter diodes) na frekvencijama do 40 GHz, i na varaktorskim diodama za naponski kontrolirane oscilatore na 3 GHz.
Godine 1989. pridružio se grupi za ultrabrzu optoelektroniku na Sveučilištu u Kaliforniji, Santa Barbara sa profesorima John E. Bowers i Evelyn L. Hu kako bi kao doktorand radio na razvoju lasera s vertikalnom rezonantnom šupljinom (VCSEL) gdje je 1995. prvi na svijetu demonstrirao VCSEL na valnoj duljini od 1550nm i koji je radio u kontinuiranom režimu na sobnoj temperaturi. Nakon doktorata, od 1995. do 1999. godine radio je u Hewlett-Packard laboratorijama u Palo Altu u Kaliforniji kao član tehničkog osoblja na razvoju VCSEL dioda korištenjem wafer-bonding tehnologije.
Godine 1999. osnovao je startup Alvesta Corporation (Sunnyvale, CA) koja je razvila i proizvodila 10Gb/s višekanalne svjetlovodne module. Prvo je radio kao glavni direktor (Chief Executive Officer), a kasnije, od 2001. godine, kao glavni tehnički direktor (Chief Technical Officer). Za Alvestu je dobavio $20 milijuna rizičnog kapitala i njome upravljao do prve prodaje proizvoda 2000. godine (Alvestu je kupila Emcore Corporation 2002. godine). Između 2003. i 2008. godine radio je kao savjetnik za Clariphy Communications, Inc. (Irvine, SAD) i XLoom Communications, Ltd (Tel Aviv, Israel) na razvoju optičkih i elektroničkih komponenti za velike brzine prijenosa.
Od 2008. do 2013. godine vodio je razvoj radiofrekvencijskih i milimetarskih pojačala temeljenih na AlGaN/GaN tranzistorima sa efektom polja koji su izrađeni na sintetičkom dijamantu kao potpredsjednik za tehnologiju i suosnivač startupa Group4 Labs, Inc. (Fremont, CA) gdje je također razvio postupak za lasersko oblikovanje dijamantnih čipova i izgradio sustav za mjerenje pouzdanosti tranzistora, a njegov tim je 2009. godine prvi na svijetu demonstrirao kompletno pojačalo (u kučištu) na 10 GHz temeljeno na tehnologiji galijevog nitrida na dijamantu (Group4 Labs je kupila tvrtka Element Six 2013. godine).
Od 2012. godine radi na Fakultetu elektrotehnike i računarstva Sveučilišta u Zagrebu u Laboratoriju za primjenjenu optiku Zavoda za komunikacijske i svemirske tehnologije, a 2022. godine izabran je za redovitog profesora. Godine 2024. godine se povukao iz nastave, ali sudjeluje na nekoliko FERovih projekata kao suradnik na projektu CroQCI i voditelj projekata SKORPI and ESA/LPCM-2. Dok je predavao na FER-u držao je nastavu iz kolegija vezanih za optičku i radiofrekvencijsku tehnoogiju, kvantnu mehaniku i intelektualno vlasništvo. Član je upravnog odbora Inovacijskog Centra Nikola Tesla (ICENT) and savjetodavnog odbora tvrtke ProtoStar Labs d.o.o. (PSL).
Godine 2013. sudjelovao je u osnivanju u Eridan Communications, Inc., startup tvrtke u Santa Clari, CA, koja je prva na svijetu razvila polarni modulator za bežične komunikacije temeljene na galijevom nitridu (GaN). Od 2019. godine radi kao direktor zagrebačke podružnice istoimene kalifornijske tvrtke: Eridan Communications d.o.o. Aktivnosti u Zagrebu su fokusirane na razvoj radiofrekvencijskih monolitički integriranih sklopova, softvera i FPGA rješenja za Eridanov prvi proizvod: baznu stanicu za privatne 5G radio mreže (5G small cells, https://eridan.io/).
Prof. Babić je također radio kao sudski vještak za intelektualno vlasništvo u SAD (2003-2012) i Hrvatskoj (2017 i 2023). Od 2005. godine piše patentne prijave za razne klijente, a od 2012 za FER. Njegovi znanstveni interesi uključuju optoelektroničke i elektroničke komponente za velike brzine prijenosa informacija, poluvodičke komponente i optiku. Objavio je preko 140 publikacija u časopisima i na konferencijama, ima 38 odobrenih patenata i napisao je jedno poglavlje u knjizi (Web of Science h-index 27, a Google Scholar h-index je 37).
Istraživačka grupa sa Sveučilišta Stanford u Kaliforniji (SAD) je 2021 godine objavila studiju o znanstvenoj citiranosti koja rangira oko 160 000 najcitiranijih svjetskih znanstvenika u svim disciplinama (https://doi.org/10.1371/journal.pbio.3000918). Studija je objavila listu najutjecajnijih znanstvenika za cjelokupnu znanstvenu karijeru: prof. dr. sc. Dubravko Babić je u top 2% znanstvenika u svijetu u području "Optoelectronics and Photonics".
Kompetencije
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Components, packaging, and manufacturing technology
Electronic components -
Antennas and propagation
Optical diffraction Optical reflection Microwave propagation Millimeter wave propagation Optical propagation -
Circuits and systems
Electronic circuits Switching circuits Filters -
Communications technology
Optical communication equipment Radio communication equipment Optical receivers Radio transceivers Optical transmitters Radio transmitters Data communication Radio communication Satellite communication Satellite ground stations -
Electron devices
Junctions Semiconductor lasers Transistors -
Lasers and electrooptics
Semiconductor lasers -
Aerospace and electronic systems
Payloads
Profesionalni interesi i članstva
IEEE, OPTICA, MIPRO
Osobni podaci
Izabrani projekti
Voditelj projekta - CROSPERITY Platforma za satelitsko mjerenje elektromagnetskog zračenja, Hrvatska zaklada za znanost, IP-01-2018-2504.
Voditelj projekta - European Space Agency Contract No. 4000138775/22/NL/SC Light-pollution characterization module (October 2022 - September 2023).
Sudionik kontakt - Digital Europe Programme DIGITAL-2021-QCI-01-DEPLOY-NATIONAL (#101091513) Croatian Quantum Communication Infrastructure - CroQCI (January 2023 - December 2023).
Voditelj projekta - European Space Agency Contract No. 4000146381/24/NL/MH/mp Light-pollution characterization module 2 (December 2024 - March 2026).
Povijest zaposlenja
University of California, Santa Barbara 1983-1985 Research Assistant
Avantek, Inc., Santa Clara, California 1985-1989 Design Engineer
University of California, Santa Barbara 1989-1995 Research Assistant
Hewlett-Packard, Palo Alto, California 1995-1999 Member of Technical Staff
Alvesta Corporation, Sunnyvale, California 1999-2002 Chief Executive Office / Chief Technical Officer
Etanvie Technologies, Santa Clara, California 2003-2008 Chief Technologist
Group4 Labs, Menlo Park, California 2008-2012 Vice President RF Technology
Eridan Communications, Santa Clara, California 2014 Vice President RF Devices
Eridan Communications, d.o.o., Zagreb 2019 Managing Director