Tražilica projekata

Na ovoj stranici nalazi se popis domaćih i međunarodnih projekata na kojima FER sudjeluje kao nositelj projekta ili partner. Poveznica s imena pojedinog projekta vodi na stranicu na kojoj možete pronaći više detalja o odabranom projektu.

U popisu projekata koriste se sljedeće oznake:

  • Linija financiranja određuje izvor financiranja, npr.:
    • MZOS označava financiranje Ministarstva znanosti, obrazovanja i sporta Republike Hrvatske (MZOS). Broj nakon skraćenice MZOS, npr. 'MZOS 2007', označava godinu u kojoj je projekt započeo s radom. 
    • BICRO označava financiranje Poslovno-inovacijskog centra Hrvatske - BICRO d.o.o., 
    • HZZ označava financiranje Hrvatske zaklade za znanost (stari naziv: NZZ - Nacionalna zaklada za znanost, visoko školstvo i tehnologijski razvoj Republike Hrvatske).
  • Tip određuje vrstu projekta. 
    • ZP označava znanstvene projekte MZOS-a, 
    • INFO označava iProjekte.

Podaci u tražilici preuzimaju se periodično iz baze međunarodnih projekata Sveučilišta u Zagrebu.


Projekti

   

Project

Acronym:
HiPerSemi 
Name:
Poluvodički elementi visokih performansi za primjene u sklopovima za bežične komunikacije i optičke detektore 
Project status:
From: 2014-08-25 To: 2018-08-24 (Execution)
Type (Programme):
HRZZ 

Croatian partner

Organisation name:
Contact person name:
Izv. prof. dr. sc. Tomislav Suligoj
Contact person tel:

Short description of project

The objective of this project is to provide notable scientific contributions by designing and utilizing the advanced semiconductor devices for the wireless communication circuits and solid – state optical detection applications. Research in this project will be grouped in three major activities, which are: (i) Horizontal Current Bipolar Transistor (HCBT) for RF Wireless Circuits, (ii) Characterization and applications of solid-state photodetectors, and (iii) Modelling of MOS, photodetector and other advanced electron devices. The novel wireless RF communication circuits such as mixer, frequency divider, voltage-controlled oscillator, RF switch and power amplifier will be designed and fabricated in HCBT technology as the first such circuits using the HCBT as an active component. The measurements of noise, reliability and on-wafer uniformity as well as linearity, gain and efficiency will be performed on transistors and circuits. The characterization of material properties of pure amorphous boron (PureB) layers will be made in order to determine the composition, electrical and optical properties of the layer and to develop the model of charge carrier transport through it. They will be correlated with electrical measurements to find out currently – unknown physical mechanisms responsible for the current reduction and for the record – high performance of photodides with PureB layers. The investigation of the novel materials such as Ge, SiGe and GaNfor ultra – scaled advanced CMOS structures, i.e. FonFETs, will be performed by the development on novel models and simulation environment. The analog/R parameters and characteristics will be extracted for FinFETs with different geometries and materials in order to determine the optimum structure for future RF systems.